ISAHAYA 2SC4155_11

〈SMALL-SIGNAL TRANSISTOR〉
2SC4155
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
OUTLINE DRAWING
Unit:mm
2SC4155 is a super mini package resin sealed
2.1
silicon NPN epitaxial transistor,
0.425
It is designed for low frequency voltage application.
0.425
1.25
②
0.34
0.66
FEATURE
①
0.66
2.1
1.32
.
③
● Small collector to emitter saturation voltage.
VCE(sat)=0.3V max
0~0.1
0.7
0.9
●Super mini package for easy mounting
0.12
●Excellent linearity of DC forward gain.
APPLICATION
For Hybrid IC,small type machine low frequency voltage
TERMINAL CONNECTER
Amplify application.
①:BASE
JEITA:SC-70
②:EMITTER
JEDEC: -
③:COLLECTOR
MAXIMUM RATINGS(Ta=25℃)
Symbol
Parameter
Ratings
Unit
VCBO
Collector to Base voltage
50
V
VCEO
Collector to Emitter voltage
50
V
VEBO
Emitter to Base voltage
6
V
100
mA
I
C
Collector current
PC
Collector dissipation
200
mW
Tj
Junction temperature
+150
℃
Tstg
Storage temperature
-55~+150
℃
MARKING
H R
Type name
hFE Item
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Parameter
C to E break down voltage
Symbol
V(BR)CEO
Collector cut off current
ICBO
Emitter cut off current
DC forward current gain
DC forward current gain
C to E Saturation Vlotage
Collector output capacitance
※: It shows hFE classification at right table
I C=100μA ,R
BE
=∞
V
CB
IEBO
V
EB
hFE
V
CE=6V, I C=1mA
hFE
V
CE
VCE(sat)
Gain bandwidth product
Limits
Test conditions
=50V, I E=0mA
=4V, I C=0mA
Unit
Min
Typ
Max
50
-
-
-
-
0.5
μA
μA
-
-
0.5
120
-
560
=6V, I C=0.1mA
70
-
-
V
I C=30mA ,IB=1.5mA
-
-
0.3
V
fT
V
CE=6V, I E=-10mA
-
200
-
MHz
Cob
V
CB
-
2.0
-
pF
=6V, I E=0mA,f=1MHz
Item
Q
R
S
hFE
120~270
180~390
270~560
ISAHAYA ELECTRONICS CORPORATION
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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May.2011