isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1837 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -230V(Min) ·High Current-Gain Bandwidth Product ·Complement to Type 2SC4793 APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A IB Base Current-Continuous -0.1 A Collector Power Dissipation @Ta=25℃ 2 PC W Collector Power Dissipation @TC=25℃ 20 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1837 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA -1.5 V VBE(on) Base-Emitter On Voltage IC= -500mA ; VCE= -5V -1.0 V ICBO Collector Cutoff Current VCB= -230V ; IE=0 -1.0 μA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -1.0 μA hFE DC Current Gain IC= -100mA; VCE= -5V COB Output Capacitance IE= 0; VCB= -10V; f= 1MHz 30 pF Current-Gain—Bandwidth Product IC= -100mA ; VCE= -10V 70 MHz fT isc Website：www.iscsemi.cn CONDITIONS 2 MIN TYP. MAX -230 UNIT V 100 320