isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain: hFE= 2000(Min)@ (VCE= -2V, IC= -2A) ·Low-Collector Saturation Voltage: VCE(sat)= -1.5V(Max.)@IC= -1.5A ·Complement to Type 2SD2257 APPLICATIONS ·Designed for high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -3 A ICM Collector Current-Pulse -5 A IB Base Current-Continuous -0.3 A Collector Power Dissipation @Ta=25℃ 2 PC W Collector Power Dissipation @TC=25℃ 20 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn 2SB1495 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB1495 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -1.5mA -1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -1.5A; IB= -1.5mA -2.0 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -8V; IC= 0 -4.0 mA hFE-1 DC Current Gain IC= -1A; VCE= -2V 2000 hFE-2 DC Current Gain IC= -2A; VCE= -2V 2000 -100 UNIT V B B Switching Times ton Turn-on Time tstg Storage Time tf IC= -1.5A, IB1= -IB2= -1.5mA, VCC≈ -30V; RL= 20Ω Fall Time isc Website：www.iscsemi.cn 2 0.5 μs 1.0 μs 0.4 μs