isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB828 DESCRIPTION ·High Collector Current:: IC= -12A ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -6A ·Wide Area of Safe Operation ·Complement to Type 2SD1064 APPLICATIONS ·Designed for relay drivers,high-speed inverters,converters, and other gereral high-current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak -17 A PC Total Power Dissipation @ TC=25℃ 80 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB828 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ; RBE= ∞ -50 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ; IE= 0 -60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ; IC= 0 -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.3A -0.5 V ICBO Collector Cutoff Current VCB= -40V; IE= 0 -0.1 mA IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -0.1 mA hFE-1 DC Current Gain IC= -1A; VCE= -2V 70 hFE-2 DC Current Gain IC= -5A; VCE= -2V 30 Current-Gain—Bandwidth Product IC= -1A; VCE= -5V fT CONDITIONS MIN TYP. B MAX UNIT 280 10 MHz 0.2 μs 0.4 μs 0.1 μs Switching times ton Turn-on Time tstg Storage Time tf RL= 4Ω, VCC= -20V IC= -5A; IB1= -IB2= -0.5A Fall Time hFE-1 Classifications Q R S 70-140 100-200 140-280 isc Website：www.iscsemi.cn 2