isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2654 DESCRIPTION ·High Collector Current:: IC= 7A ·Low Collector Saturation Voltage :VCE(sat)= 0.3(V)(Max)@IC= 3A ·Complement to Type 2SA1129 APPLICATIONS ·Designed for low-frequency power amplifiers and mid-speed switching applications. ·Ideal for use in a lamp driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 15 A IB Base Current- Continuous 3.5 A Total Power Dissipation @ Ta=25℃ 1.5 B W PC TJ Tstg Total Power Dissipation @ TC=25℃ 40 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2654 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.1A 0.3 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 0.6 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 3A; IB= 0.1A 1.5 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A 2.0 V ICBO Collector Cutoff Current VCB= 40V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE-1 DC Current Gain IC= 3A ; VCE= 1V 40 hFE-2 DC Current Gain IC= 5A ; VCE= 1V 20 B B B B 320 Switching Times ton Turn-on Time tstg Storage Time tf IC= 5A ,RL= 4Ω, IB1= -IB2= 0.5A,VCC≈ 20V Fall Time hFE-1 Classifications M L K J 40-80 60-120 100-200 160-320 isc Website：www.iscsemi.cn 2 1.0 μs 2.5 μs 1.0 μs