isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2523DF DESCRIPTION ·High Switching Speed ·High Voltage ·Built-in Ddamper Ddiode APPLICATIONS ·Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current-Continuous 11 A ICM Collector Current-peak 29 A IB Base Current-Continuous 7 A IBM Base Current-peak 10 A PC Collector Power Dissipation @TC=25℃ 45 W Tj Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.8 K/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2523DF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0,L= 25mH 800 V(BR)EBO Emitter-Base Breakdown Voltage IE= 600mA ;IC= 0 7.5 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.5A ;IB= 1.1A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5.5A ;IB= 1.1A 1.0 V ICES Collector Cutoff Current VCE= BVCES; VBE= 0 VCE= BVCES; VBE= 0;TC=125℃ 1.0 2.0 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 170 mA hFE-1 DC Current Gain IC= 1A ; VCE= 5V hFE-2 DC Current Gain IC= 5.5A ; VCE= 5V VECF C-E Diode Forward Voltage IF= 5.5A isc Website：www.iscsemi.cn CONDITIONS MIN TYP. MAX UNIT V 13.5 B B 80 V 12 5 10.8 2.2 V