isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV89 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 800V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in AC motor control systems from threephase mains. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage VBE=0 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 4 A IBM Base Current-Peak 6 A PC Collector Power Dissipation @ TC=25℃ 125 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case isc Website：www.iscsemi.cn MAX UNIT 1.0 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV89 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ;IB= 0; L=25 mH VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 3A Base-Emitter Saturation Voltage IC= 4.5A; IB= 2A ICES Collector Cutoff Current IEBO B MIN TYP. MAX 800 V 1.0 1.0 B UNIT V V 1.3 V VCE= VCESmax;VBE= 0 VCE= VCESmax;VBE= 0; TJ= 125℃ 1 2 mA Emitter Cutoff Current VEB= 5V; IC=0 10 mA hFE DC Current Gain IC= 1A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V;ftest= 1MHz Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 5V;ftest= 5MHz VBE(sat) fT 8 125 pF 7 MHz 0.2 μs 3.5 μs 0.5 μs Switching Times; Resistive Load ton Turn-On Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 4.5A; IB1= -IB2= 2A 2