ISOCOM CQY80

CQY80X, CQY80NX
CQY80, CQY80N
OPTICALLY COUPLED
ISOLATOR
PHOTOTRANSISTOR OUTPUT
APPROVALS
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UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
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CQY80X is VDE 0884 in 3 available
lead forms : - STD
- G form
- SMD approved to CECC 00802
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7.0
6.0
FEATURES
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Options :10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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High Isolation Voltage (5.3kVRMS ,7.5kVPK )
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Custom electrical selections available
APPLICATIONS
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DC motor controllers
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Industrial systems controllers
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Signal transmission between systems of
different potentials and impedances
OPTION SM
OPTION G
SURFACE MOUNT
7.62
1
2
6
5
3
4
1.2
7.62
6.62
CQY80NX - VDE 0884 pending
CQY80X is certified to EN60950 by the
following Test Bodies :-
Nemko - Certificate No. P96101299
Fimko - Registration No. 190469-01..22
Semko - Reference No. 9620076 01
Demko - Reference No. 305567
CQY80NX - EN60950 pending
DESCRIPTION
The CQY80 series of optically coupled
isolators consist of infrared light emitting diode
and NPN silicon photo transistor in a standard
6 pin dual in line plastic package.
Dimensions in mm
2.54
7.62
4.0
3.0
13°
Max
0.5
3.0
0.5
3.35
0.26
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 150°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
60mA
6V
105mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO
Collector-base Voltage BVCBO
Emitter-collector Voltage BVECO
Power Dissipation
32V
70V
6V
160mW
POWER DISSIPATION
0.6
0.1
10.46
9.86
1.25
0.75
0.26
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
10.16
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
DB90035m-AAS/A1
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
Input
Output
Coupled
PARAMETER
MIN TYP MAX UNITS
Forward Voltage (VF)
Reverse Voltage (VR)
Reverse Current (IR)
6
1.2
1.60
10
Collector-emitter Breakdown (BVCEO)
( Note 2 )
Emitter-collector Breakdown (BVECO)
Collector-emitter Dark Current (ICEO)
32
IC / IF (CTR) (Note 2)
0.5
Current Transfer Ratio (CTR) (Note 2)
50
6
200
0.3
5300
7500
Input-output Isolation Resistance RISO 5x1010
IF = 50mA
IR = 10µA
VR = 6V
V
IC = 1mA
V
nA
IE = 100µA
VCE = 20V
%
10mA IF , 5V VCE
V
10mA IF , 1mA IC
VRMS
VPK
See note 1
See note 1
Ω
VIO = 500V (note 1)
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
Type
RL = 100Ω see fig 1
td
tr
ton
ts
µs
µs
µs
µs
tf
µs
toff
µs
IC
mA
RL = 1kΩ see fig 2
ton
toff IF
µs
µs
mA
4.0
6.7
7.0
5
25.0
CQY80
CQY80N
7.0
11.0
0.3
VCC = 5V
42.5
10
VCC = 5V
Output
Output
50Ω
50Ω
RL = 100Ω
Figure 1
7/12/00
V
V
µA
10mA IF , 5V VCE
Collector-emitter Saturation VoltageVCE(SAT)
Input to Output Isolation Voltage VISO
TEST CONDITION
RL = 1kΩ
Figure 2
DB90035m-AAS/A1
Collector Power Dissipation vs. Ambient Temperature
Collector Current vs. Collector-emitter Voltage
TA = 25°C
50
Collector current I C (mA)
Collector power dissipation P C (mW)
200
150
100
50
40
50
30
30
20
15
20
10
10
IF = 5mA
0
0
-30
0
25
50
75
100
0
125
Forward Current vs. Ambient Temperature
70
280
Current transfer ratio CTR (%)
320
60
50
40
30
20
0
8
10
VCE = 5V
TA = 25°C
240
200
160
120
80
40
0
-30
0
25
50
75
100
1
125
2
5
Ambient temperature TA ( °C )
1.0
0.5
0
-30
0
25
50
75
Ambient temperature TA ( °C )
20
50
Collector-emitter Saturation
Voltage vs. Ambient Temperature
(V)
CE(SAT)
IF = 10mA
VCE = 5V
100
Collector-emitter saturation voltage V
1.5
10
Forward current IF (mA)
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative current transfer ratio
6
Current Transfer Ratio vs. Forward Current
80
10
7/12/00
4
Collector-emitter voltage VCE ( V )
Ambient temperature TA ( °C )
Forward current I F (mA)
2
0.28
0.24
IF = 10mA
IC = 1mA
0.20
0.16
0.12
0.08
0.04
0
-30
0
25
50
75
100
Ambient temperature TA ( °C )
DB90035m-AAS/A1