DHG 40 C 1200 HB preliminary V RRM = 1200 V I FAV = 2x 20 A t rr = 200 ns Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 2 1 3 DHG 40 C 1200 HB Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Housing: TO-247 Conditions ●rIndustry standard outline ●rEpoxy meets UL 94V-0 ●rRoHS compliant Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF forward voltage I FAV average forward current VF0 threshold voltage rF slope resistance thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current CJ junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved max. Unit V VR = 1200 V 25 µA VR = 1200 V TVJ = 125 °C 0.4 mA IF = 20 A TVJ = 25 °C 2.24 V IF = 40 A 2.89 V IF = 20 A IF = 40 A rectangular TVJ = 125 °C d = 0.5 2.24 V 3.15 V TC = 95°C 20 A TVJ = 150°C 1.29 V 43 mΩ 0.90 K/W 150 °C TC = 25 °C 140 W TVJ = 45°C 150 A -55 t = 10 ms (50 Hz), sine IF = reverse recovery time typ. 1200 for power loss calculation only R thJC t rr min. TVJ = 25 °C TVJ = 25 °C 20 A; VR = 600 V -di F /dt = 400 A/µs VR = 600 V; f = 1 MHz TVJ = 25 °C 15 A TVJ = 125°C 20 A TVJ = 25 °C 200 ns TVJ = 125°C 350 ns TVJ = 25 °C 8 pF Data according to IEC 60747and per diode unless otherwise specified 20110808a DHG 40 C 1200 HB preliminary Ratings Symbol Definition min. Conditions I RMS RMS current R thCH thermal resistance case to heatsink Tstg storage temperature per terminal max. Unit 70 0.25 -55 Weight mounting torque FC mounting force with clip A K/W 150 6 MD 1) typ. 1) °C g 0.8 1.2 Nm 20 120 N IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2) . In case of (1) and a common cathode/anode configu ration with a non-isolated backside, the current capability can be increased by connecting the backside. Product Marking Part number Logo Marking on product DateCode Assembly Code D H G 40 C 1200 HB abcdef YYWWZ = = = = = = = Diode Sonic Fast Recovery Diode extreme fast Current Rating [A] Common Cathode Reverse Voltage [V] TO-247AD (3) 000000 Assembly Line Ordering Standard Ordering Number DHG 40 C 1200 HB IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Marking on Product DHG40C1200HB Delivery Mode Tube Quantity 30 Code No. 505138 Data according to IEC 60747and per diode unless otherwise specified 20110808a DHG 40 C 1200 HB preliminary Outlines TO-247 A E A2 Ø P1 ØP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 b4 3x b C A1 2x e IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 Data according to IEC 60747and per diode unless otherwise specified 20110808a DHG 40 C 1200 HB preliminary 40 5 TVJ = 125°C VR = 600 V 30 4 40 A IF Qrr 20 3 [A] 20 A [µC] TVJ = 125°C 10 2 TVJ = 25°C 0 0.0 0.5 1.0 1.5 2.0 2.5 10 A 1 200 3.0 300 VF [V] 400 500 600 700 diF /dt [A/µs] Fig. 1 Typ. Forward current versus VF Fig. 2 Typ. reverse recov.charge Qrr vs. di/dt 35 700 40 A TVJ = 125°C 30 TVJ = 125°C 600 VR = 600 V 20 A 25 VR = 600 V 500 10 A IRM 20 [A] 15 [ns] 300 10 200 5 100 trr 0 200 300 400 500 600 400 40 A 20 A 10 A 0 200 700 300 400 500 600 700 diF /dt [A/µs] diF /dt [A/µs] Fig. 3 Typ. peak reverse current IRM vs. di/dt Fig. 4 Typ. recovery time trr versus di/dt 1 1.4 TVJ = 125°C VR = 600 V 1.2 1.0 40 A Erec ZthJC 0.8 20 A [mJ] [K/W] 0.6 10 A 1 2 3 4 0.4 0.2 200 300 400 500 600 diF /dt [A/µs] Fig. 5 Typ. recovery energy Erec versus di/dt IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved 700 0.1 0.001 0.01 0.1 Ri 0.231 0.212 0.19 0.267 ti 0.0005 0.004 0.02 0.15 1 10 tp [s] Fig. 6 Typ. transient thermal impedance Data according to IEC 60747and per diode unless otherwise specified 20110808a