DPG 15 I 300 PA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 15 A 35 ns Part number DPG 15 I 300 PA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Housing: TO-220 Conditions ●rIndustry standard outline ●rEpoxy meets UL 94V-0 ●rRoHS compliant Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF forward voltage I FAV average forward current VF0 threshold voltage rF slope resistance thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current CJ junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved max. Unit V VR = 300 V 1 µA VR = 300 V TVJ = 150 °C 0.08 mA IF = 15 A TVJ = 25 °C 1.26 V IF = 30 A 1.51 V IF = 15 A 1.01 V IF = 30 A 1.29 V TC = 140°C 15 A TVJ = 175°C 0.69 V rectangular TVJ = 150 °C d = 0.5 18 mΩ 1.70 K/W 175 °C TC = 25 °C 90 W TVJ = 45°C 240 A -55 t = 10 ms (50 Hz), sine IF = reverse recovery time typ. 300 for power loss calculation only R thJC t rr min. TVJ = 25 °C TVJ = 25 °C 15 A; VR = 200 V -di F /dt = 200 A/µs VR = 150 V; f = 1 MHz TVJ = 25 °C 3 A TVJ = 125°C 6.5 A TVJ = 25 °C 35 ns TVJ = 125°C 55 ns TVJ = 25 °C 20 pF Data according to IEC 60747and per diode unless otherwise specified 20100216a DPG 15 I 300 PA Ratings Symbol Definition Conditions per terminal I RMS RMS current R thCH thermal resistance case to heatsink Tstg storage temperature min. typ. max. Unit 35 0.50 -55 Weight 150 2 MD mounting torque FC mounting force with clip A K/W °C g 0.4 0.6 Nm 20 60 N Product Marking Part number Marking on product Logo DateCode Assembly Code Ordering Standard abcdef YYWW = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Single Diode Reverse Voltage [V] TO-220AC (2) XXXXXX Part Name DPG 15 I 300 PA IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved D P G 15 I 300 PA Marking on Product DPG15I300PA Delivering Mode Tube Base Qty Code Key 50 506633 Data according to IEC 60747and per diode unless otherwise specified 20100216a DPG 15 I 300 PA Outlines TO-220 Dim. Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 5.08 5.85 10.66 BSC 6.85 0.390 0.200 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 ØP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A A1 H1 Q E L1 D ØP L 3x b2 3x b e C A2 IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20100216a DPG 15 I 300 PA 80 0.5 16 TVJ = 125°C VR = 200 V 70 IF = 30 A IF = 15 A 12 IF = 7.5 A 50 15 A Qrr TVJ = 25°C 150°C IRM 10 0.3 40 [A] 14 0.4 60 IF 30 A 7.5 A [µC] 30 8 [A] 0.2 6 20 4 0.1 10 TVJ = 125°C 2 0 0.0 0.0 0.5 1.0 1.5 VF [V] 2.0 2.5 0 0 Fig. 1 Forward current IF vs. VF VR = 200 V 100 200 300 400 500 600 -diF/dt [A/µs] 0 -diF/dt [A/µs] Fig. 2 Typ. reverse recovery charge Qrr versus -diF /dt 1.4 100 200 300 400 500 600 Fig. 3 Typ. peak reverse current IRM versus -diF /dt 70 16 400 TVJ = 125°C 14 VR = 200 V 1.2 TVJ = 125°C 60 0.8 trr Kf IF = 30 A 50 VFR 10 300 tfr 200 8 0.6 [ns] IRM [V] 40 15 A 0.4 20 20 40 60 80 100 120 140 160 TVJ [°C] 1.8 14 1.6 IF = 30 A IF = 15 A 100 0 100 200 300 400 500 600 -diF /dt [A/µs] Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt 1.4 ZthJC IF = 7.5 A 8 0 Fig. 5 Typ. recovery time trr vs. -diF /dt 16 10 100 200 300 400 500 600 -diF /dt [A/µs] Fig. 4 Dynamic parameters Q rr, IRM versus TVJ 12 0 0 tfr VFR 2 0.0 0 [ns] 6 4 7.5 A 30 Qrr 0.2 Erec IF = 15 A VR = 200 V 12 1.0 1.2 [K/W] 1.0 [µJ] 6 0.8 4 TVJ = 125°C VR = 200 V 2 0 0.6 0.4 0 100 200 300 400 500 600 -diF/dt [A/µs] Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved 1 10 100 1000 10000 t [ms] Fig. 8 Transient thermal resistance junction to case Data according to IEC 60747and per diode unless otherwise specified 20100216a