DPG 60 C 400 HB V RRM = 400 V I FAV = 2x 30 A t rr = 45 ns HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DPG 60 C 400 HB Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Housing: TO-247 Conditions ●rIndustry standard outline ●rEpoxy meets UL 94V-0 ●rRoHS compliant Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF forward voltage I FAV average forward current VF0 threshold voltage rF slope resistance thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current CJ reverse recovery time junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved typ. max. Unit 400 V VR = 400 V 1 µA VR = 400 V TVJ = 150 °C 0.2 mA TVJ = 25 °C 1.41 V 1.69 V 1.13 V 1.46 V TC = 135°C 30 A TVJ = 175°C 0.76 V IF = 30 A IF = 60 A IF = 30 A IF = 60 A rectangular TVJ = 150 °C d = 0.5 for power loss calculation only R thJC t rr min. TVJ = 25 °C TVJ = 25 °C -55 10.7 mΩ 0.95 K/W 175 °C TC = 25 °C 160 W t = 10 ms (50 Hz), sine TVJ = 45°C 360 A TVJ = 25 °C 4 A IF = TVJ = 125°C 8.5 A 30 A; VR = 270 V -di F /dt = 200 A/µs VR = 200 V; f = 1 MHz TVJ = 25 °C 45 ns TVJ = 125°C 85 ns TVJ = 25 °C 39 pF Data according to IEC 60747and per diode unless otherwise specified 20100125a DPG 60 C 400 HB Ratings Symbol Definition min. Conditions I RMS RMS current RthCH thermal resistance case to heatsink Tstg storage temperature per pin max. Unit 50 0.25 -55 Weight A K/W 150 °C 6 MD mounting torque FC mounting force with clip 1) typ. 1) g 0.8 1.2 Nm 20 120 N IRMS is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Product Marking Part number Logo Marking on product DateCode Assembly Code Ordering Standard D P G 60 C 400 HB abcdef YYWW Diode HiPerFRED extreme fast Current Rating [A] Common Cathode Reverse Voltage [V] TO-247AD (3) XXXXXX Part Name DPG 60 C 400 HB Similar Part DPG60C400QB DPG80C400HB IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved = = = = = = = Marking on Product DPG60C400HB Package TO-3P (3) TO-247AD (3) Delivering Mode Tube Base Qty Code Key 30 505825 Voltage Class 400 400 Data according to IEC 60747and per diode unless otherwise specified 20100125a DPG 60 C 400 HB Outlines TO-247 IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 Data according to IEC 60747and per diode unless otherwise specified 20100125a DPG 60 C 400 HB 1.0 80 20 70 IF = 60 A 30 A 15 A 0.8 60 50 IF [A] 16 0.6 TVJ = 150°C Qrr 40 [A] 0.4 20 8 TVJ = 125°C VR = 270 V 0.2 25°C 12 IRR [µC] 30 10 0.4 0.8 1.2 VF [V] 1.6 0 0 2.0 TVJ = 125°C VR = 270 V 4 0.0 0.0 IF = 60 A 30 A 15 A 200 400 600 0 200 Fig. 2 Typ. reverse recovery charge Qrr versus -diF /dt Fig. 1 Forward current IF versus forward voltage VF 140 1.6 1.4 600 Fig. 3 Typ. reverse recovery current IRR versus -diF /dt 700 TVJ = 125°C VR = 270 V 120 1.2 400 -diF /dt [A/µs] -diF /dt [A/µs] 16 tfr 600 TVJ = 125°C VR = 270 V IF = 30 A VFR 14 100 500 12 80 tfr 400 [ns] 300 10 1.0 trr [ns] Kf 0.8 0.6 60 IF = 60 A 30 A 15 A IRR 40 0.4 Qrr 0.2 20 0.0 200 6 100 4 0 0 40 80 120 160 0 0 TVJ [°C] Fig. 4 Dynamic parameters Qrr, IRR versus TVJ 200 400 600 -diF /dt [A/µs] Fig. 5 Typ. reverse recovery time trr versus -diF /dt 50 VFR 8 0 200 400 -diF /dt [A/µs] [V] 2 600 Fig. 6 Typ. forward recovery voltage VFR & forward recovery time tfr vs. diF /dt 1.0 TVJ = 125°C VR = 270 V 40 0.8 IF = 60 A 30 Erec ZthJC 30 A 15 A [µJ] 20 0.6 [K/W] 0.4 10 0.2 0 0.0 0 200 400 -diF /dt [A/µs] 600 Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved 1 10 100 t [ms] 1000 10000 Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per diode unless otherwise specified 20100125a