DSEE29-12CC V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Phase leg Part number 1 2 600 V 30 A 35 ns 3 DSEE29-12CC Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Housing: ISOPLUS220 ●rIndustry standard outline ●rDCB isolated backside ●rIsolation Voltage 3000 V ●rEpoxy meets UL 94V-0 ●rRoHS compliant Conditions Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF forward voltage I FAV average forward current VF0 threshold voltage rF slope resistance thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current CJ junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved max. Unit V VR = 600 V 500 µA VR = 600 V TVJ = 150 °C 1 mA IF = 30 A TVJ = 25 °C 1.62 V IF = 60 A 1.95 V IF = 30 A 1.27 V IF = 60 A 1.58 V TC = 130°C 30 A TVJ = 175°C 1.00 V rectangular TVJ = 150 °C d = 0.5 10 mΩ 0.90 K/W 175 °C TC = 25 °C 165 W TVJ = 45°C 200 A -55 t = 10 ms (50 Hz), sine IF = reverse recovery time typ. 600 for power loss calculation only R thJC t rr min. TVJ = 25 °C TVJ = 25 °C 30 A; VR = 300 V -di F /dt = 600 A/µs VR = 400 V; f = 1 MHz TVJ = 25 °C 17 A TVJ = 100°C 29 A TVJ = 25 °C 35 ns TVJ = 100°C 90 ns TVJ = 25 °C 26 pF Data according to IEC 60747and per diode unless otherwise specified 20110215a DSEE29-12CC Ratings Symbol Definition Conditions I RMS RMS current per terminal R thCH thermal resistance case to heatsink Tstg storage temperature min. typ. max. Unit 35 0.50 -55 Weight 150 2 FC mounting force with clip 20 VISOL isolation voltage d Spp/App creepage | striking distance on surface | through air terminal to terminal d Spb/Apb creepage | striking distance on surface | through air terminal to backside t = 1 second t = 1 minute A K/W °C g 60 N 3600 V 3000 V 1.0 mm 3.0 mm Product Marking UL listed Logo IXYS Part No. Date Code Order Code abcd Ordering Standard Part Name DSEE29-12CC Similar Part DSEE30-12A IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Marking on Product DSEE29-12CC Package TO-247AD (3) Delivering Mode Tube Base Qty Code Key 50 500694 Voltage Class 600 Data according to IEC 60747and per diode unless otherwise specified 20110215a DSEE29-12CC E A A2 D2 Outlines ISOPLUS220 E1 D3 D 2 3 2x b2 L L1 1 D1 T Dim. 3x b c 2x e b4 A1 A A1 A2 b b2 b4 c D D1 D2 D3 E E1 e L L1 T° W Millimeters min max 4.00 5.00 2.50 3.00 1.60 1.80 0.90 1.30 2.35 2.55 1.25 1.65 0.70 1.00 15.00 16.00 12.00 13.00 1.10 1.50 14.90 15.50 10.00 11.00 7.50 8.50 2.54 BSC 13.00 14.50 3.00 3.50 42.5 47.5 0.1 Inches min max 0.157 0.197 0.098 0.118 0.063 0.071 0.035 0.051 0.093 0.100 0.049 0.065 0.028 0.039 0.591 0.630 0.472 0.512 0.043 0.059 0.587 0.610 0.394 0.433 0.295 0.335 0.100 BSC 0.512 0.571 0.118 0.138 - 0.004 Die konvexe Form des Substrates ist typ. < 0.04 mm über der Kunststoffoberfläche der Bauteilunterseite The convex bow of substrate is typ. < 0.04 mm over plastic surface level of device bottom side Die Gehäuseabmessungen entsprechen dem Typ TO-273 gemäß JEDEC außer D und D1. This drawing will meet all dimensions requiarement of JEDEC outline TO-273 except D and D1. W IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20110215a DSEE29-12CC 70 3000 60 2500 A TVJ = 100°C 40 VR = 300 V TVJ = 150°C 50 IF 50 IF = 60 A 2000 40 TVJ = 100°C [A] 30 IF = 15 A [nC] IF = 15 A IRM IF = 30 A 1500 IF = 30 A 30 IF = 60 A Qr [A] 1000 20 20 10 TVJ = 100°C 10 500 VR = 300 V TVJ = 25°C 0 0.0 0.5 1.0 1.5 0 100 2.0 0 1000 VF [V] 0 Fig. 1 Forward current IF vs. VF 130 1000 1.2 TVJ = 100°C IF = 30 A IF = 60 A 15 0.9 IF = 30 A 110 tfr VFR IF = 15 A trr Kf 1.0 800 Fig. 3 Typ. peak reverse current IRM versus -diF /dt VR = 300 V 1.5 600 20 TVJ = 100°C 120 400 -diF /dt [A/µs] Fig. 2 Typ. reverse recovery charge Qr versus -diF /dt 2.0 100 10 0.6 [µs] [V] [ns] 90 IRM 0.5 200 -diF /dt [A/µs] 5 0.3 VFR 80 trr Qr 0.0 70 0 40 80 120 160 0 0 200 400 600 800 1000 0 200 -diF /dt [A/µs] TVJ [°C] Fig. 4 Dynamic parameters Qr, IRM versus TVJ 400 600 800 0.0 1000 -diF /dt [A/µs] Fig. 6 Typ. peak forward voltage VFR Fig. 5 Typ. recovery time trr versus -diF /dt and typ. forward recovery time tfr versus diF /dt 1 Constants for ZthJC calculation: ZthJC i 0.1 [K/W] 0.01 0.001 Rthi (K/W) ti (s) 1 0.038 0.00024 2 0.07 0.0036 3 0.245 0.0235 4 0.198 0.1421 5 0.35 0.25 DSEE 29-12CC 0.01 0.1 1 10 t t [s] Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20110215a