SEMICONDUCTOR 2N7002A TECHNICAL DATA N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. FEATURES ・High density cell design for low RDS(ON). E B L L ・Voltage controlled small signal switch. D ・Rugged and reliable. 2 H A 3 G ・High saturation current capablity. 1 Q P UNIT Drain-Source Voltage VDSS 60 V Drain-Gate Voltage (RGS≤1㏁) VDGR 60 V Gate-Source Voltage VGSS ±20 V Continuous ID 115 Pulsed IDP 800 Drain Power Dissipation PD 200 mW Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ Drain Current J RATING K SYMBOL P N CHARACTERISTIC C MAXIMUM RATING (Ta=25℃) DIM A B C D E G H J K L M N P Q MILLIMETERS 2.93 +_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 0.1 MAX M 1. SOURCE 2. GATE 3. DRAIN mA Storage Temperature Range SOT-23 Marking EQUIVALENT CIRCUIT Lot No. WB Type Name ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=10μA 60 - - V Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V - - 1 μA Gate-Body Leakage, Forward IGSSF VGS=20V, VDS=0V - - 1 μA Gate-Body Leakage, Reverse IGSSR VGS=-20V, VDS=0V - - -1 μA 2009. 11. 17 Revision No : 8 1/4 2N7002A ELECTRICAL CHARACTERISTICS (Ta=25℃) ON CHARACTERISTICS (Note 1) CHARACTERISTIC SYMBOL Vth Gate Threshold Voltage TEST CONDITION MIN. TYP. MAX. UNIT VDS=VGS, ID=250μA 1 2.1 2.5 V VGS=10V, ID=500mA - 1.8 5 VGS=5V, ID=50mA - - 5 VGS=10V, ID=500mA - 0.9 2.5 VGS=5V, ID=50mA - - 0.25 Ω RDS(ON) Drain-Source ON Resistance VDS(ON) Drain-Source ON Voltage On State Drain Current Forward Transconductance V ID(ON) VGS=10V, VDS≥2 VDS(ON) 500 - - mA gFS VDS=2VDS(ON), ID=200mA 80 320 - mS MIN. TYP. MAX. UNIT - 20 50 - 4 5 - 11 25 Note 1) Pulse Test : Pulse Width≦300㎲, Duty Cycle≦2.0% DYNAMIC CHARACTERISTICS CHARACTERISTIC SYMBOL Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss TEST CONDITION VDS=25V, VGS=0V, f=1MHz Turn-On Time ton VDD=30V, RL=150Ω, ID=200mA, - - 20 Turn-Off Time toff VGS=10V, RGEN=25Ω - - 20 Switching Time pF nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RAINGS CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT IS - - - 115 mA ISM - - - 800 mA - 0.88 1.5 V Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage 2009. 11. 17 Revision No : 8 VSD VGS=0V, IS=115mA (Note1) 2/4 2N7002A 2009. 11. 17 Revision No : 8 3/4 2N7002A 2009. 11. 17 Revision No : 8 4/4