KISEMICONDUCTOR KBU803

KBU801
THRU
KBU807
KI SEMICONDUCTOR
Features
•
•
•
•
8 Amp Single Phase
Low Forward Voltage Drop
Ideal For Printer Circuit Boards
High Current Capability and High Reliability
High Surge Current Capability
Bridge Rectifier
50 to 1000 Volts
Maximum Ratings
•
•
KBU
A
Operating Temperature: -50°C to +150°C
Storage Temperature: -50°C to +150°C
Catalog
Number
KBU801
KBU802
KBU803
KBU804
KBU805
KBU806
KBU807
Device
Marking
KBU8A
KBU8B
KBU8D
KBU8G
KBU8J
KBU8K
KBU8M
Maximum
Reccurrent
Peak Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
35V
70V
140V
280V
420V
560V
700V
D
E
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
B
C
AC
-
+
F
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current (NOTE 1,2 )
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
IF(AV)
8A
IFSM
200A
VF
1.0V
G
Tc = 100°C
8.3ms, half sine
J
K
L
DIMENSIONS
TC = 25°C
IR
10 µA
300mA
TC = 25°C
TC = 100°C
DIM
A
B
C
D
E
F
G
J
K
L
INCHES
MIN
.895
.600
.740
.15∅ x
--.100
.048
.268
--.180
MAX
.935
.700
.780
.23L
.300
-.052
.280
.140
.220
MM
MIN
22.7
16.8
18.8
3.8∅ x
--25.4
1.2
6.8
--4.6
MAX
23.7
17.8
19.8
5.7L
7.5
--1.3
7.1
5.3
5.6
NOTE
NOM
HOLE
NOM
NOM
3PL
*Pulse Test: Pulse Width 300µsec, Duty Cycle 2%
KI SEMICONDUCTOR
KBU801 thru KBU807
Figure 1
Typical Forward Characteristics
Figure 2
Typical Reverse Characteristics
100
10
TC=100°C
10
1.0
µAmps
Amps
TC=25°C
0.1
1.0
TC=25°C
0.1
0.6
0.01
1.0
0.8
1.2
0
40
80
120
Volts
Volts
Instantaneous Forward Current - Amperesversus
Instantaneous Forward Voltage - Volts
Instantaneous Reverse Leakage Current - MicroAmperesversus
Percent Of Rated Peak Reverse Voltage - Volts
Figure 3
Forward Derating Curve
12
10
8
Amps
6
4
2
0
0
25
50
75
100
125
150
°C
Average Forward Rectified Current - Amperesversus
Ambient Temperature - °C
KI SEMICONDUCTOR