LUGUANG 1N5062

1N5059-1N5062
Plastic Silicon Rectifier
VOLTAGE RANGE: 200---800 V
CURRENT: 2.0 A
Features
DO - 15
Low cos t
Diffus ed junction
Glass passivated chips
Low forward voltage drop
High crrent capability
Eas ily cleaned with Freon,Alcohol, ls opropand
and s im ilar s olvents
Mechanical Data
Cas e: JEDEC DO-15, m olded plas tic
Term inals : Axial leads ,s olderable per MIL-STD
-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces , 0.39gram s
Mounting: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,50 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
1N5059
1N5060
1N5061
1N5062
UNITS
Maximum recurrent peak reverse voltage
VRRM
200
400
600
800
V
Maximum RMS voltage
V RMS
140
280
420
560
V
Maximum DC blocking voltage
V DC
200
400
600
800
V
Maximum average forw ard rectif ied current
9.5mm lead length,
@TA =50
IF(AV)
2.0
A
IFSM
50.0
A
VF
1.2
1.15
5.0
Peak f orw ard surge current
10ms single half -sine-w ave
@TJ =125
superimposed on rated load
Maximum instantaneous
forw ard voltage
Maximum reverse current
@1.0A
@ 2.5A
@TA =25
at rated DC blocking voltage @TA =150
IR
100
V
A
Maximum reverse recovery time
(Note1)
t rr
4.0
µs
Typical junction capacitance
(Note2)
CJ
40
pF
Typical thermal resistance
(Note3)
RθJA
45
K/W
TJ
- 55 ----- + 175
TSTG
- 55 ----- + 175
Operating junction temperature range
Storage temperature range
NOTE: 1.Measured with I F =0.5A, I R=1A, I rr=0.25A.
2. Measured at 1.0MH Z and applied rev erse v oltage of 0V DC.
3. Thermal resistance from junction to ambient.
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1N5059-1N5062
Plastic Silicon Rectifier
Ratings AND Charactieristic Curves
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
trr
10
N 1.
50
N 1.
+0.5A
0
D.U.T.
(+)
25VDC
(approx)
(-)
OSCILLOSCOPE
(NOTE1)
1
NONINDUCTIVE
-0.25A
PULSE
GENERATOR
(NOTE2)
-1.0A
1cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF.
JJJJ 2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .
SET TIMEBASEFOR 2.0 µ s/cm
AVERAGE FORWARD RECTIFIED CURRENT
AMPERES
FIG.3 -- FORWARD DERATING CURVE
20
10
T J =25
Pulse Width=300 µ S
1.0
AMPERES
INSTANTANEOUS FORWARD CURRENT
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
50
TJ=25℃
10ms Single Half
Sine-Wave
40
30
20
10
0
1
5
10
50
100
NUMBER OF CYCLES AT 50Hz
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1.6
1.2
Single Phase
Half Wave 50HZ
Resistive or
Inductive Load
0.8
0.4
0
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE,
FIG.5--TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE,pF
PEAK FORWARD SURGE CURRENT
AMPERES
FIG.4 -- PEAK FORWARD SURGE CURRENT
2.0
200
100
60
40
20
10
6
4
TJ=25
2
1
0.1 0.2
0.4
1
2
4
10
20
REVERSE VOLTAGE,VOLTS
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40
100