LUGUANG 1N5819W

1N5819W
surface mount schottky barrier diode
SOD-123
0.022(0.55)
Typ. Min.
FEATURES :
*
*
*
*
*
*
0.053(1.35)
Max.
Low Power Loss,
Low Forward Voltage Drop
High Efficiency
High Surge Capability
High Current Capability
Pb / RoHS Free
0.152(3.85)
0.140(3.55)
0.112(2.85)
0.100(2.55)
0.010(0.25)
Min.
MECHANICAL DATA :
0.067(1.70)
0.055(1.40)
0.006(0.15)
Typ. Min.
* Case: SOD-123, Plastic
* Polarity: Cathode Band
0.004(0.10)
Max.
Dimensions in inches and (millimeters)
Absolute Maximum Ratings (Ta = 25 °C)
Parameter
Symbol
Value
Unit
Maximum Peak Repetitive Reverse Voltage
VRRM
40
V
Maximum Working Peak Reverse Voltage at I R = 1 mA
VRWM
40
V
VR
40
V
VR(RMS)
28
V
IF
1
A
IFSM
25.0
A
Maximum DC Blocking Voltage
Maximum RMS Reverse Voltage
Maximum Average Forward Current
Non-Repetitive Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rated load (JEDEC Method)
Ptot
450
mW
RӨJA
222
°C/W
TJ
125
°C
TSTG
-55 to + 125
°C
Power Dissipation
Typical Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature Range
Electrical Characteristics
Parameter
(Ta = 25 °C)
Symbol
Reverse Breakdown Voltage
V(BR)R
Forward Voltage (Note 1)
VF
Reverse Leakage Current
(Note 1)
IRM
Typical Junction Capacitance
CJ
Test Condition
Min.
Typ.
Max.
Unit
40
-
-
V
IF = 0.1 A
-
-
0.32
IF = 1.0 A
-
-
0.45
IF = 3.0 A
-
-
0.75
VR = 40 V
-
-
1
mA
IR = 1.0 mA
VR = 40 V, Ta = 100 °C
-
-
10.0
mA
VR = 4 V
-
10.0
50.0
μA
VR = 4 V, Ta = 100 °C
-
1.0
2.0
mA
VR = 6 V
-
15.0
75.0
μA
VR = 6 V, Ta = 100 °C
-
1.5
3.0
mA
at VR = 4V, f = 1MHz
-
110
-
pF
Note : (1) Pulse Test: Pulse width ≤200 μs, Duty Cycle ≤2%.
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