BAV23S Small Signal Diode SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 1 GATE 2.Emitter 2 SOURCE +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 3.collector 3 DRAIN Dimensions in inches and (millimeters) Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Value Unit VRRM Maximum Repetitive Reverse Voltage Parameter 250 V IF(AV) Average Rectified Forward Current 200 mA IFSM Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 microsecond Pulse Width = 100 microsecond 9.0 3.0 A A -55 to +150 °C 150 °C Value Unit TSTG Storage Temperature Range TJ Operating Junction Temperature *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter PD Power Dissipation 350 mW RθJA Thermal Resistance, Junction to Ambient* 357 °C/W Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. Max VR Breakdown Voltage IR = 100µA VF Forward Voltage IF = 100mA IF = 200mA 1.0 1.25 V V IR Reverse Leakage VR = 250V VR = 250V, TA = 150°C 100 100 nA µA trr Reverse Recovery Time IF = IR = 30mA, IRR = 3.0mA, RL = 100Ω 50 ns http://www.luguang.cn 250 Units V mail:[email protected] BAV23S Small Signal Diode Typical Performance Characteristics http://www.luguang.cn mail:[email protected] BAV23S Small Signal Diode 400 300 250 300 IF - CURRENT (mA) P - POWER DISSIPATION (mW) Typical Performance Characteristics (Continued) 200 100 0 25 50 75 100 125 o T A - A M B IEN T TEM PE R A TU R E ( C ) Figure 9. Power Derating Curve 150 200 150 100 50 0 0 25 50 75 100 150 o Figure 10. Average Rectified Current(IO) vs Ambient Temperature(TA) Figure 11. Reverse Recovery Time vs Reverse Recovery Current (Irr) http://www.luguang.cn 125 T A - AMBIENT TEMPERATURE ( C) mail:[email protected]