Direct Attach DA1000™ LEDs CxxxDA1000-Sxx000 Data Sheet Cree’s Direct Attach DA1000 LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the general-illumination market. The DA1000 LEDs are among the brightest in the lighting market while delivering a low forward voltage, resulting in a very bright and highly efficient solution. The bondpad-down design allows for a eutectic direct die-attach process, eliminating the need for wire bonds, and enables superior performance from improved thermal management. FEATURES APPLICATIONS • Direct Attach LED Technology • • Rectangular LED RF Performance − Aircraft – − Decorative Lighting 450 & 460 nm – 485 mW min General Illumination • High Reliability - Eutectic Attach • Low Forward Voltage (Vf) – 3.15 V Typical at 350 mA • Maximum DC Forward Current – 1000 mA • White LEDs • InGaN Junction-Down Design for Improved Thermal • Camera Flash Management • Projection Displays No Wire Bonds Required • Automotive • − Task Lighting − Outdoor Illumination CxxxDA1000-Sxx000 Chip Diagram A CPR3ES Rev Data Sheet: Top View Die Cross Section DA1000 LED 1000 x 1000 μm Bottom View Anode (+) 945 x 75 μm Gap 75 μm Cathode (-) 945 x 795 μm t = 335 μm Subject to change without notice. www.cree.com 1 Maximum Ratings at TA = 25°C Notes 1,2 & 3 CxxxDA1000-Sxx000 DC Forward Current 1000 mA Peak Forward Current (1/10 duty cycle @ 1 kHz) 1250 mA LED Junction Temperature 150°C Reverse Voltage 5V Operating Temperature Range -40°C to +100°C Storage Temperature Range -40°C to +100°C Typical Electrical/Optical Characteristics at TA = 25°C, If = 350 mA Part Number Note 2 Forward Voltage (Vf, V) Reverse Current [I(Vr=5V), μA] Full Width Half Max (λD, nm) Min. Typ. Max. Max. Typ. C450DA1000-Sxx000 2.7 3.15 3.5 2 20 C460DA1000-Sxx000 2.7 3.15 3.5 2 21 Mechanical Specifications CxxxDA1000-Sxx000 Description Dimension Tolerance P-N Junction Area (μm) 960 x 960 ±35 Chip Bottom Area (μm) 1000 x 1000 ±35 Chip Top Area (μm) 630 x 630 ±45 Chip Thickness (μm) 335 ±25 AuSn Bond Pad Width – Anode (um) 75 ±15 AuSn Bond Pad Length – Anode (um) 945 ±35 AuSn Bond Pad Width – Cathode (um) 795 ±35 AuSn Bond Pad Length – Cathode (um) 945 ±35 75 ±15 3 ±0.5 Bond Pad Gap (μm) AuSn Bond Pad Thickness (μm) Notes: 1. 2. 3. Maximum ratings are package-dependent. The above ratings were determined using a Cree 3.45-mm x 3.45-mm SMT package (with silicone encapsulation and intrinsic AuSn metal die attach) for characterization. Ratings for other packages may differ. Junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 350 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1¾ packages (with Hysol OS4000 epoxy encapsulant and intrinsic AuSn metal die attach). Optical characteristics measured in an integrating sphere using Illuminance E. The maximum forward current is determined by the thermal resistance between the LED junction and ambient. It is crucial for the end-product to be designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to optimize product performance. 1200 Maximum Forward Current (mA) 1000 800 600 Rth j-a = 10 Rth j-a = 15 Rth j-a = 20 Rth j-a = 25 400 200 C/W C/W C/W C/W 0 25 50 75 100 125 150 175 Ambient Temperature (C) Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and DA and DA1000 are trademarks of Cree, Inc. 2 CPR3ES Rev A Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Standard Bins for CxxxDA1000-Sxx000 LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxDA1000-Sxxxxx) orders may be filled with any or all bins (CxxxDA1000-xxxxx) contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 350 mA. Radiant Flux (mW) C450DA1000-S48500 C450DA1000-0325 C450DA1000-0326 C450DA1000-0327 C450DA1000-0328 C450DA1000-0321 C450DA1000-0322 C450DA1000-0323 C450DA1000-0324 C450DA1000-0317 C450DA1000-0318 C450DA1000-0319 C450DA1000-0320 C450DA1000-0313 C450DA1000-0314 C450DA1000-0315 C450DA1000-0316 C450DA1000-0309 C450DA1000-0310 C450DA1000-0311 C450DA1000-0312 625 585 550 515 485 445 447.5 450 452.5 455 Dominant Wavelength (nm) Radiant Flux (mW) C460DA1000-S48500 C460DA1000-0325 C460DA1000-0326 C460DA1000-0327 C460DA1000-0328 C460DA1000-0321 C460DA1000-0322 C460DA1000-0323 C460DA1000-0324 C460DA1000-0317 C460DA1000-0318 C460DA1000-0319 C460DA1000-0320 C460DA1000-0313 C460DA1000-0314 C460DA1000-0315 C460DA1000-0316 C460DA1000-0309 C460DA1000-0310 C460DA1000-0311 C460DA1000-0312 625 585 550 515 485 455 457.5 460 462.5 465 Dominant Wavelength (nm) Note: The radiant-flux values above are representative of the die in a T-1¾ encapsulated 5-mm lamp. Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and DA and DA1000 are trademarks of Cree, Inc. 3 CPR3ES Rev A Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Relative Light In Characteristic Curves 150% 100% 50% 0% 0 200 400 600 800 1000 If (mA) These are representative measurements for the DA LED product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Forward Current vs. Forward Voltage Wavelength Shift vs. Forward Current 1000 2 Dominant Wavelength Shift (nm) 900 800 If (mA) 700 600 500 400 300 200 100 0 1 0 -1 -2 0 1 2 3 4 5 0 200 400 Forward Current vs. Forward Voltage Relative Intensity vs. Forward Current Relative Light Intensity Vs Junction Temperature 1000 250% 900 100% 800 200% 95% 700 200 75% 50% 100 70% 0 1 2 3 4 5 200 50 400 75 600 100 800 125 1000 150 Vf (V) If (mA) Junction Temperature (°C) 66 55 44 33 22 11 00 25 25 75 75 100 100 125 125 150 150 Voltage Voltage Shift Shift Vs Vs Junction Junction Temperature Temperature Wavelength Shift vs. Forward Current 0.000 0.000 2 95% -0.050 -0.050 90% -0.100 -0.100 VoltageShift Shift(V) (V) Voltage Dominant Relative Wavelength (nm) LightShift Intensity 50 50 Junction Junction Temperature Temperature (°C) (°C) Relative Light Intensity Vs Junction Temperature 100% 1000 Dominant Dominant Wavelength Wavelength Shift Shift Vs Vs Junction Junction Temperature Temperature 600 90% 150% 500 85% 400 100% 80% 300 0% 0 65% 0 25 800 If (mA) DominantWavelength WavelengthShift Shift(nm) (nm) Dominant Relative Light Intensity Relative Light Intensity If (mA) Vf (V) 600 1 85% 80% 0 75% 70% -1 -0.150 -0.150 -0.200 -0.200 -0.250 -0.250 -0.300 -0.300 65% 25 50 0 200 -2 75 100 Junction 400 Temperature 600 (°C) 125 800 150 1000 -0.350 -0.350 25 25 50 50 75 75 100 100 125 125 150 150 Junction Junction Temperature Temperature (°C) (°C) If (mA) Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and DA and DA1000 are trademarks of Cree, Inc. 4 CPR3ES Rev A Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Radiation Pattern This is a representative radiation pattern for the DA LED product. Actual patterns will vary slightly for each chip. Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and DA and DA1000 are trademarks of Cree, Inc. 5 CPR3ES Rev A Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com