85D(R)Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Glass Passivated Standard Recovery Diodes (Stud Version), 85A FEATURES Glass passivated chips High surge current capability Stud cathode and stud anode version Wide current range Voltage up to 1600V VRRM RoHS compliant TYPICAL APPLICATIONS Battery charges Converters Power supplies Machine tool controls Welder DO-203AB(DO-5) PRODUCT SUMMARY IF(AV) 85A MAJOR RATINGS AND CHARACTERISTICS TEST CONDITIONS PARAMETER 85D(R) 16 85 TC I F(AV) UNIT 02 TO 12 A 140 110 I F(RMS) 50 HZ I FSM 60 HZ 50 HZ 60 HZ I 2t Range V RRM TJ ºC 133 A 1700 595 14450 13170 A A 2s 200 to 1200 1600 V -65 to 180 -65 to 150 ºC ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER 85D( R ) VOLTAGE CODE VRRM,MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM,MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 02 200 300 04 400 500 06 600 700 08 800 900 10 1000 1100 12 1200 1300 16 1600 1700 Page 1 of 6 VRRM,MAXIMUM TJ-TJ=Maximum mA 9 4.5 85D(R)Series SEMICONDUCTOR RoHS RoHS Nell High Power Products FORWARD CONDUCTION Maximum average forward current at case temperature I F(AV) 85D(R) TEST CONDITIONS SYMBOL PARAMETER 02 TO 12 140 I FSM non-reptitive surge current 110 ºC 133 t = 10 ms Maximum peak, one-cycle forward, A 85 180 ° conduction, half sine wave I F(RMS) Maximum RMS forward current UNIT 16 t = 8.3 ms t = 10 ms t = 8.3 ms No voltage reapplied 100%V RRM reapplied 1450 t = 10 ms t = 8.3 ms No voltage reapplied t = 10 ms 100%V RRM reapplied 1800 Sinusoidal half wave, A 1500 initial T J = T J maximum 14450 13170 10230 Maximum l²t for fusing I 2t Maximum l²√t for fusing 2 I √t t = 0.1 to 10 ms, no voltage reapplied Maximum forward voltage drop V FM l pk = 267A, T J = 25˚C, t p = 400µs rectangular wave t = 8.3 ms A 1700 A 2s 9340 A 2 √s 144500 1.2 V 1.4 FORWARD CONDUCTION TEST CONDITIONS SYMBOL PARAMETER Maximum junction operating and storage temperature range TJ Maximum thermal resistace, junction to case R thJC 85D(R) 02 TO 12 UNIT 16 - 65 to180 - 65 to150 DC operation ºC 0.35 K/W Maximum thermal resistance R thCS case to heatsink 0.25 Mounting surface, smooth, flat and greased Not lubricated thread ,tighting on nut (1) 3.4(30) (1) N·m (lbf · in) Maximum allowable mounting torque Lubricated thread ,tighting on nut (+0% , -10%) Not lubricated thread ,tighting on hexagon (2) 4.2(37) Lubricated thread ,tighting on hexagon (2) 3.2(28) N·m (lbf · in) 15 0.53 g oz. 2.3(20) Approximate weight Case style See dimensions - link at the end of datasheet DO-203AB (DO-5) Note (1) Recommended for pass-through holes. (2) Recommended for holed threaded heatsinks. RthJC CONDUCTION CONDUCTION ANGEL 180˚ 120˚ 90˚ 60˚ 30˚ SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 0.10 0.08 0.11 0.13 0.17 0.11 0.13 0.17 0.26 0.26 TEST CONDUCTIONS UNITS T J = T J maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Page 2 of 6 85D(R)Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.2 Current Ratings Characteristics 180 85D(R) Series (200V to 1200V) RthJC (DC) = 0.35 K/W 170 Conduction Angle 160 150 30° 60° 140 90° 120° 180° 130 150 Maximum Allowable Case Temperature(˚C) Maximum Allowable Case Temperature(˚C) Fig.1 Current Ratings Characteristics 85D(R) Series (1600V) RthJC (DC) = 0.35 K/W 140 Conduction Angle 130 120 30° 60° 110 120° 180° 100 0 10 20 30 40 50 60 70 80 90 100 0 10 Average Forward Current (A) 85D(R) Series (200V to 1200V) RthJC (DC) = 0.35 K/W 170 Conduction Period 160 150 30° 60° 140 90° 120° DC 180° 130 20 60 40 80 100 120 150 80 90 100 85D(R) Series (1600V) RthJC (DC) = 0.35 K/W 140 Conduction Period 130 120 30° 60° 110 90° 120° 180° DC 100 0 140 20 Average Forward Current (A) 40 60 80 100 120 140 Average Forward Current (A) Fig.5 Forward Power Loss Characteristics 90 2 1 K/ W K/ W K/ W K/W .5 =0 70 1. 5 60 RMS Limit aR elt -D 3K /W 50 40 30 Conduction Angle 20 85D(R) Series (200V to 1200V) Tj = 180°C 10 SA Rth 180° 120° 90° 60° 30° 80 K/W 0.7 Maximum Average Forward Power Loss (W) 0 50 60 70 40 Fig.4 Current Ratings Characteristics Maximum Allowable Case Temperature(˚C) 180 20 30 Average Forward Current (A) Fig.3 Current Ratings Characteristics Maximum Allowable Case Temperature(˚C) 90° 5K /W 10 K/W 0 0 10 20 30 40 50 60 70 80 Average Forward Current (A) Page 3 of 6 90 20 40 60 80 100 120 140 160 180 Maximum Allowable Ambient Temperature (°C) 85D(R)Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.6 Forward Power Loss Characteristics K/ W RMS Limit aR elt -D 2K 60 W K/ .5 =0 1. 5 A hS Rt 80 W K/ 100 K/W 0.7 DC 180° 120° 90° 60° 30° 1 Maximum Average Forward Power Loss (W) 120 /W 3K /W Conduction Period 40 5 K/W 85D(R) Series (200V to 1200V) Tj = 180°C 20 10 K/W 0 0 20 60 40 80 100 120 60 40 20 140 Average Forward Current (A) 80 100 120 140 160 180 Maximum Allowable Ambient Temperature (°C) Fig.7 Forward Power Loss Characteristics Rt hS A K/W W =0 .5 5 1. elt 2K RMS Limit -D 60 W W K/ K/ 70 K/ 80 0.7 180° 120° 90° 60° 30° 90 1 /W aR Maximum Average Forward Power Loss (W) 100 50 3K 40 Conduction Angle 30 20 5 K/ 85D(R) Series (1600V) Tj = 150°C 10 /W W 10 K/W 0 0 10 20 30 40 50 60 70 80 90 50 25 Average Forward Current (A) 75 100 125 150 Maximum Allowable Ambient Temperature (°C) Fig.8 Forward Power Loss Characteristics Maximum Average Forward Power Loss (W) 140 DC 180° 120° 90° 60° 30° 120 100 Rt 80 RMS Limit 60 hS A = 0.7 0. 5 K/ K/ W W 1K -D /W elt a R 1.5 K/W 2K /W 3 K/ W Conduction Period 40 85D(R) Series (1600V) Tj = 150°C 20 5 K/W 10 K/W 0 0 20 40 60 80 100 120 Average Forward Current (A) Page 4 of 6 140 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) 150 RoHS RoHS 85D(R)Series SEMICONDUCTOR Nell High Power Products Fig.10 Forward Voltage Drop Characterisics (Up To 1200V) 1600 10000 At Any Rated Load Condition And With Rated VRRM Applied Following Surge initial TJ = TJ Max @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1400 Instantaneous Forward Current (A) Peak Half Sine Wave Forward Current (A) Fig.9 Maximum Non-Repetitive Surge Current 1200 1000 800 600 85D(R) Series Tj = 25°C Tj = Tj Max 1000 100 85D(R) Series up to 1200V 10 400 1 100 10 0 Number Of Equal Amplitude Half Cycle current Pulses(N) Instantaneous Forward Current (A) Peak Half Sine Wave Forward Current (A) 1400 1200 1000 800 600 400 85D(R) Series 200 Tj = Tj Max. 100 Tj = 25°C 10 85D(R) Series 0 1 0.1 Pulse Train Duration (S) 10 Steady State Value RthJC = 0.35 K/W (DC Operation) 0.1 0.01 85D(R) Series 0.001 0.0001 0.001 0.01 0.1 1 0.5 1 1.5 2 2.5 Instantaneous Forward Voltage (V) Fig.13 Thermal Impedance Z thJC Characteristics Transient Thermal Impedance Z thJC (K/W) 6 1 0.01 1 5 4 1000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial Tj = Tj Max. No Voltage Reapplied Rated Vrrm Reapplied 1600 3 2 Fig.12 Forward Voltage Drop Characterisics (for 1600V) Fig.11 Maximum Non-Repetitive Surge Current 1800 1 Instantaneous Forward Voltage (V) 10 Square Wave Pulse Duration (s) Page 5 of 6 85D(R)Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ORDERING INFORMATION TABLE Device code 85 D R 12 M 1 2 3 4 5 1 - 2 - D = Standard recovery device 3 - None = Stud normal polarity (cathode to stud) R = Stud reverse polarity (anode to stud) 4 - Voltage code × 100 = VRRM (see Voltage Ratings table) 5 - Current rating: Code = IF(AV) None = Stud base DO-203AB (DO-5) 1/4”-28 UNF-2A M = Stud base DO-230AB (DO-5) M6× 1.0 17.3(0.68) 19(0.75) Ø15(Ø0.6) 0.9/1.5 (0.03/0.06) 11(0.43) 9.4/10.2 (0.37/0.4) 25.4(1.0) 6.1/6.7 (0.24/0.26) (3.0(0.11)MIN Ø4.3(Ø01.7) 1/4” 28UNF-2A For metric devices: M6× 1.0 Page 6 of 6