Doc No. TT4-EA-14120 Revision. 2 Product Standards Schottky Barrier Diode DB2440100L DB2440100L Silicon epitaxial planar type Unit: mm 2.4 For rectification 0.15 2 Features 3.8 4.7 Low forward voltage VF Low terminal capacitance Ct Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 Marking Symbol: 41 1.75 0.85 Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25 C Parameter Symbol Reverse voltage Maximum peak reverse voltage Forward current *1 Non-repetitive peak forward surge current Junction temperature *1 Operating ambient temperature Storage temperature Note: *2 VR VRM IF IFSM Tj Topr Tstg 1. Cathode 2. Anode Panasonic JEITA Code Rating Unit 40 40 1.0 30 150 -40 to +85 -55 to +150 V V A A °C °C °C *1 Tl = 80 °C *2 50 Hz sine wave 1 cycle (Non-repetitive peak current) TMiniP2-F2-B SC-110A ― Internal Connection 2 1 Page 1 of 4 Established : 2012-03-02 Revised : 2013-04-19 Doc No. TT4-EA-14120 Revision. 2 Product Standards Schottky Barrier Diode DB2440100L Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Forward voltage Reverse current Terminal capacitance Reverse recovery time * 1 VF IR Ct trr Conditions Min IF = 1.0 A VR = 40 V VR = 10 V, f = 1 MHz IF = IR = 100 mA, Irr = 10 mA Typ Max Unit 0.39 250 V μA pF ns 50 15 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. *1 trr test circuit Input Pulse Bias Application Unit (N-50BU) tp tr 10% A Pulse Generator (PG-10N) Rs = 50 Ω VR Wave Form Analyzer (SAS-8130) Ri = 50 Ω Output Pulse t IF trr 90% tp = 2 μs tr = 0.35 ns δ = 0.05 IF = 100 mA IR = 100 mA t Irr = 10 mA Page 2 of 4 Established : 2012-03-02 Revised : 2013-04-19 Doc No. TT4-EA-14120 Revision. 2 Product Standards Schottky Barrier Diode DB2440100L Technical Data ( reference ) IR - VR IF - VF 1.E-01 Ta = 125 °C 1.E+00 Reverse current IR (A) Forward current IF (A) 1.E+01 85 °C 1.E-01 1.E-02 25 °C 1.E-03 -40 °C 1.E-04 1.E-05 0.0 Ta = 125 °C 1.E-02 1.E-03 25 °C 1.E-04 1.E-05 -40 °C 1.E-06 1.E-07 1.E-08 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 Forward voltage VF (V) 15 25 30 35 40 Rth - t Ct - VR 1000 (1) Ta = 25 °C f = 1 MHz 200 Thermal resistance Rth (°C/W) Terminal capacitance Ct (pF) 20 Reverse voltage VR (V) 250 150 100 50 (2) 100 0 5 10 15 20 25 30 Reverse voltage VR (V) 35 (3) Rth(j-l) = 9 °C/W 10 0 (1) Non-heat sink (2) Mounted on glass epoxy print board. (3) Mounted on alumina print board. Board size : 50 mm × 50 mm x 0.8 mm Solder in : 2 mm x 2 mm 1 0.001 40 0.01 IF(AV) - Tl 0.1 1 10 Time t (s) 100 1000 PF(AV) - IF(AV) 0.5 IF tp/T 1 Forward power dissipation (Average) PF(AV) (W) 1.25 Forward current (Average) IF(AV) (A) 85 °C tp T DC VR = 20 V Tj = 125 °C 1/2 0.75 0.5 1/4 Sine Wave 0.25 0 IF 0.4 tp DC T Sine Wave 0.3 1/2 1/4 0.2 0.1 0 0 25 50 75 100 125 Lead temperature Tl (°C) 150 175 0 0.2 0.4 0.6 0.8 1 1.2 Forward current (Average) IF(AV) (A) Page 3 of 4 Established : 2012-03-02 Revised : 2013-04-19 Doc No. TT4-EA-14120 Revision. 2 Product Standards Schottky Barrier Diode DB2440100L TMiniP2-F2-B Unit: mm 2.4±0.1 0.15±0.05 (5°) 4.7±0.1 3.8±0.1 2 0.45±0.10 1 0 to 0.03 (5°) 0 to 0.4 0.85±0.05 1.75±0.10 Land Pattern (Reference) (Unit: mm) 1.4 4.4 1.4 2.1 Page 4 of 4 Established : 2012-03-02 Revised : 2013-04-19 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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