CM150RX-12A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Six IGBTMOD™ + Brake NX-Series Module 150 Amperes/600 Volts AN AH AL AK AJ R AD AL AL AM AL AM AM AK A D E F G AP AJ AT AR DETAIL "A" AA(4 PLACES) 35 P AUAL 12 11 10 TS NM L KB 9 AVAL 8 7 R Q U V AQ AS 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 J RQ AL AM AM H AE AL 6 36 P 5 1 2 3 AW 4 H J AF AG C BC BD AC BB X Y Q P R Z W Z Z P(35) BE DETAIL "B" TH1 (11) GUP(34) B(4) AB (6 PLACES) GVP(26) EUP(33) EVP(25) TH2 (10) GWP(18) EWP(17) U(1) V(2) W(3) GUN(30) GVN(22) GWN(14) EUN(29) EVN(21) EWN(13) NTC AL GB(6) DETAIL "A" EB(5) AZ BA AX AY DETAIL "B" *ALL PIN DIMENSIONS WITHIN A TOLERANCE OF ±0.5 N(36) Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N P Q R S T U V W X Y Z AA AB AC Rev. 11/08 Inches 5.39 3.03 Millimeters 136.9 77.1 0.67+0.04/-0.0217.0+1.0/-0.5 4.79 121.7 4.33±0.02 110.0±0.5 3.89 99.0 3.72 94.5 0.83 21.14 0.37 6.5 2.44 62.0 2.26 57.5 1.97±0.02 50.0±0.5 1.53 39.0 0.24 6.0 0.48 12.0 0.67 17.0 1.53 39.0 0.87 22.0 0.55 14.0 0.54 13.64 0.33 8.5 0.53 13.5 0.81 20.71 0.9 22.86 0.22 Dia. 5.5 Dia. M5 M5 0.06 1.5 Dimensions AD AE AF AG AH AJ AK AL AM AN AP AQ AR AS AT AU AV AW AX AY AZ BA BB BC BD BE Inches 0.51 0.12 0.21 0.49 0.81 0.30 0.28 0.15 0.45 0.14 0.16 0.78 0.03 0.27 0.16 0.61 0.60 0.46 0.04 0.02 0.29 0.05 0.49 0.17 Dia. 0.10 Dia. 0.08 Dia. Millimeters 13.0 3.0 5.4 12.5 20.5 7.75 7.25 3.81 11.44 3.5 4.06 20.05 0.8 7.0 4.2 15.48 15.24 11.66 1.15 0.65 7.4 6.2 12.5 4.3 Dia. 2.5 Dia. 2.1Dia. Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration and a seventh IGBT with freewheel diode for dynamic braking. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £ Photovoltaic/Fuel Cell Ordering Information: Example: Select the complete module number you desire from the table below -i.e. CM150RX-12A is a 600V (VCES), 150 Ampere Six-IGBTMOD™ + Brake Power Module. Type Current Rating Amperes VCES Volts (x 50) CM150 12 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM150RX-12A Six IGBTMOD™ + Brake NX-Series Module 150 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics Power Device Junction Temperature SymbolCM150RX-12AUnits Tj -40 to 150 °C Tstg -40 to 125 °C Mounting Torque, M5 Mounting Screws — 31 in-lb Mounting Torque, M5 Main Terminal Screws — 31 in-lb — 330 Grams Storage Temperature Module Weight (Typical) Isolation Voltage, AC 1 minute, 60Hz Sinusoidal VISO 2500Volts Inverter Sector Collector-Emitter Voltage (G-E Short) VCES 600Volts Gate-Emitter Voltage (C-E Short) VGES ±20Volts Collector Current (TC = 63°C)* Peak Collector Current** Emitter Current (TC = 25°C, Tj < 150°C)* Peak Emitter Current (Tj < 150°C)** Maximum Collector Dissipation (TC = 25°C, Tj < 150°C)* IC 150Amperes ICM 300Amperes IE*** 150Amperes IEM*** 300Amperes PC 520Watts Brake Sector Collector-Emitter Voltage (G-E Short) VCES 600Volts Gate-Emitter Voltage (C-E Short) VGES ±20Volts Collector Current (TC = 70°C)* IC 75Amperes Peak Collector Current** ICM 150Amperes Maximum Collector Dissipation (TC = 25°C, Tj < 150°C)* PC 280Watts Repetitive Peak Reverse Voltage (Clamp Diode Part) Forward Current (TC = 25°C)* Forward Current (Clamp Diode Part)** VRRM***600 Volts IF*** 75Amperes IFM*** 150Amperes *TC, Tf measured point is just under the chips. **Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. ***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Rev. 11/08 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM150RX-12A Six IGBTMOD™ + Brake NX-Series Module 150 Amperes/600 Volts Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Inverter Sector Characteristics Collector Cutoff Current Gate-Emitter Threshold Voltage Gate Leakage Current Collector-Emitter Saturation Voltage Symbol Test Conditions Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V — — 1.0 mA VGE(th) IC = 15mA, VCE = 10V 5 6 7 Volts IGES VGE = VGES, VCE = 0V — — 0.5 µA VCE(sat) IC = 150A, VGE = 15V, Tj = 25°C — 1.7 2.1 Volts IC = 150A, VGE = 15V, Tj = 125°C — 1.9 — Volts IC = 150A, VGE = 15V, Chip — 1.6 — Volts — — 18.0 nF — — 2.0 nF Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Total Gate Charge QG VCE = 10V, VGE = 0V — — 0.6 nF VCC = 300V, IC = 150A, VGE = 15V — 400 — nC — — 120 ns VCC = 300V, IC = 150A, — — 100 ns Inductive Turn-on Delay Time td(on) Load Turn-on Rise Time tr Switch Turn-off Delay Time td(off) VGE = ±15V, — — 350 ns Time Turn-off Fall Time tf RG = 6.2Ω, IE = 150A, — — 600 ns Inductive Load Switching Operation — — 200 ns — 5.0 — µC Reverse Recovery Time* trr Reverse Recovery Charge* Qrr Emitter-Collector Voltage* VEC IE = 150A, VGE = 0V, Tj = 25°C — 2.0 2.8 Volts IE = 150A, VGE = 0V, Tj = 125°C — 1.95 — Volts IE = 150A, VGE = 0V, Chip — 1.9 — Volts Test Conditions Min. Typ. Max. Units Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Thermal Resistance, Junction to Case** Rth(j-c)Q Per IGBT — — 0.24 °C/W Thermal Resistance, Junction to Case** Rth(j-c)D Per FWDi — — 0.46 °C/W Contact Thermal Resistance** Rth(c-f) Thermal Grease Applied — 0.015 — °C/W Internal Gate Resistance RGint TC = 25°C — 0 — Ω External Gate Resistance RG 4.1 — 41 Ω *Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). **TC, Tf measured point is just under the chips. CHIP LOCATION (TOP VIEW) Chip Location (Top View) 99.7 89.3 79.6 55.8 45.3 34.1 NTC Thermistor 22.6 FWDi 0 IGBT 0 0 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 20.6 26.0 29.4 35 UP VP UN UP 35.4 WP VN VP Br 12 WN Th 10 9 WP UN VN 1 2 Br 7 6 41.4 96.4 97.8 89.6 4 79.1 3 55.3 44.8 33.6 5 23.1 26.8 8 WN 36 0 17.3 11 Dimensions in mm (Tolerance: ±1mm) Rev. 11/08 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM150RX-12A Six IGBTMOD™ + Brake NX-Series Module 150 Amperes/600 Volts Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Brake Sector Characteristics Collector Cutoff Current Gate-Emitter Threshold Voltage Gate Leakage Current Collector-Emitter Saturation Voltage Symbol Test Conditions Min. Typ. Max. ICES VCE = VCES, VGE = 0V — — 1.0 mA VGE(th) IC = 7.5mA 5 6 7 Volts IGES VGE = VGES, VCE = 0V — — 0.5 µA VCE(sat) IC = 75A, VGE = 15V, Tj = 25°C — 1.7 2.1 Volts IC = 75A, VGE = 15V, Tj = 125°C — 1.9 — Volts IC = 75A, VGE = 15V, Chip — 1.6 — Volts — — 9.3 nF VCE = 10V, VGE = 0V — — 1.0 nF Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Total Gate Charge QG Repetitive Reverse Current* Forward Voltage Drop * Units IRRM VF — — 0.3 nF VCC = 300V, IC = 75A, VGE = 15V — 200 — nC VR = VRRM — — 1.0 mA IF = 75A, Tj = 25°C — 2.0 2.8 Volts IF = 75A, Tj = 125°C — 1.95 — Volts — 1.9 — Volts IF = 75A, Chip Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case** Rth(j-c)Q Per IGBT — — 0.44 °C/W Thermal Resistance, Junction to Case** Rth(j-c)D Per FWDi — — 0.85 °C/W Contact Thermal Resistance** Rth(j-f) Thermal Grease Applied — 0.015 — °C/W Internal Gate Resistance RGint TC = 25°C — 0 — Ω External Gate Resistance RG 8 — 83 Ω Test Conditions Min. Typ. Max. Units NTC Thermistor Sector, Tj = 25°C unless otherwise specified Characteristics Symbol Zero Power Resistance R TC = 25°C 4.85 5.00 5.15 kΩ Deviation of Resistance ∆R/R TC = 100°C, R100 = 493Ω –7.3 — +7.8 % B(25/50) B = (InR1 – InR2) / (1/T1 – 1/T2)*** — 3375 — K P25 TC = 25°C — — 10 mW B Constant Power Dissipation *Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). **TC, Tf measured point is just under the chips. ***R1: Resistance at Absolute Temperature T1(K), R2: Resistance at Absolute Temperature T2(K), T(K) = t(°C) + 273.15 4 Rev. 11/08 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM150RX-12A Six IGBTMOD™ + Brake NX-Series Module 150 Amperes/600 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (INVERTER PART - TYPICAL) 15 250 3.5 Tj = 25°C VGE = 20V 12 13 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 200 11 150 100 10 50 0 2 4 6 8 1.5 1.0 0.5 100 0 200 8 IC = 300A 6 IC = 150A 4 IC = 60A 2 0 300 6 8 10 12 14 16 18 COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (INVERTER PART - TYPICAL) CAPACITANCE VS. VCE (INVERTER PART - TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (INVERTER PART - TYPICAL) 102 Tj = 25°C Tj = 125°C CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) 2.0 Tj = 25°C COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 102 0 1 2 3 td(off) Cies 101 Coes 100 tf 102 td(on) Cres 10-1 4 100 101 VCC = 300V VGE = ±15V RG = 6.2Ω Tj = 125°C Inductive Load tr 102 101 101 102 103 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) SWITCHING TIME VS. GATE RESISTANCE (INVERTER PART - TYPICAL) REVERSE RECOVERY CHARACTERISTICS (INVERTER PART - TYPICAL) GATE CHARGE VS. VGE (INVERTER PART) 103 td(off) 102 td(on) VCC = 300V VGE = ±15V IC = 150A Tj = 125°C Inductive Load tr 101 100 101 GATE RESISTANCE, RG, (Ω) Rev. 11/08 102 REVERSE RECOVERY, Irr (A), trr (ns) tf 20 103 VGE = 0V 10-1 103 SWITCHING TIME, (ns) 2.5 0 10 103 101 3.0 SWITCHING TIME, (ns) 0 8 9 10 VGE = 15V Tj = 25°C Tj = 125°C 20 VCC = 300V VGE = ±15V RG = 6.2Ω Tj = 25°C Inductive Load GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 300 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (INVERTER PART - TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) OUTPUT CHARACTERISTICS (INVERTER PART - TYPICAL) 102 101 101 Irr trr 102 EMITTER CURRENT, IE, (AMPERES) 103 IC = 150A 16 VCC = 200V VCC = 300V 12 8 4 0 0 100 200 300 400 500 600 GATE CHARGE, QG, (nC) 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM150RX-12A Six IGBTMOD™ + Brake NX-Series Module 150 Amperes/600 Volts 10-1 100 101 102 VCC = 300V VGE = ±15V IC = 150A Tj = 125°C Inductive Load Eon Eoff 100 10-1 100 101 REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) VCC = 300V VGE = ±15V IE = 150A Tj = 125°C Inductive Load 100 10-1 Err 100 10-1 100 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (INVERTER PART - TYPICAL) 101 101 10-2 102 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (INVERTER PART - TYPICAL) 10-2 10-3 Tj = 25°C Tj = 125°C 102 100 10-1 101 10-2 3 FORWARD VOLTAGE, VF, (VOLTS) 6 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) FORWARD CURRENT, IF, (AMPERES) 103 2 Err 100 10-1 101 100 10-2 10-4 4 10-3 10-3 10-3 10-3 10-1 3.5 VGE = 15V Tj = 25°C Tj = 125°C 3.0 2.5 2.0 1.5 1.0 0.5 0 0 50 100 150 COLLECTOR-CURRENT, IC, (AMPERES) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (BRAKE PART - TYPICAL) 10-2 103 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (BRAKE PART - TYPICAL) 101 10-1 10-5 102 EMITTER CURRENT, IE, (AMPERES) TIME, (s) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (BRAKE PART - TYPICAL) 1 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.24°C/W (IGBT) Rth(j-c) = 0.46°C/W (FWDi) GATE RESISTANCE, RG, (Ω) 0 102 VCC = 300V VGE = ±15V RG = 6.2Ω Tj = 125°C Inductive Load GATE RESISTANCE, RG, (Ω) COLLECTOR CURRENT, IC, (AMPERES) 102 REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) VCC = 300V VGE = ±15V RG = 6.2Ω Tj = 125°C Inductive Load Eon Eoff 101 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 100 SWITCHING LOSS, Eon, Eoff, (mJ/PULSE) SWITCHING LOSS, Eon, Eoff, (mJ/PULSE) 101 102 101 100 REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT (INVERTER PART - TYPICAL) SWITCHING LOSS VS. GATE RESISTANCE (INVERTER PART - TYPICAL) SWITCHING LOSS VS. COLLECTOR CURRENT (INVERTER PART - TYPICAL) 100 101 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.44°C/W (IGBT) Rth(j-c) = 0.85°C/W (FWDi) 10-2 10-5 10-4 10-3 10-3 TIME, (s) Rev. 11/08