CM600DY-12NF Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual IGBTMOD™ NF-Series Module 600 Amperes/600 Volts TC MEASURED POINT (BASEPLATE) A F F W G2 B E H E1 C2E1 L (4 PLACES) G E2 J N E2 K C1 K G G1 K M NUTS (3 PLACES) D P Q Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heatsinking baseplate, offering simplified system assembly and thermal management. P Q T THICK U WIDTH P S C V LABEL R Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking G2 E2 C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions A 4.33 B C Inches 3.15 Millimeters Dimensions Inches Millimeters 110.0 M M6 Metric M6 80.0 N 1.18 30.0 P 0.71 18.0 Q 0.28 7.0 1.14+0.04/-0.002 29.0+1.0/-0.5 D 3.66±0.01 93.0±0.25 E 2.44±0.01 62.0±0.25 R 0.83 21.2 S 0.33 8.5 F 0.98 25.0 G 0.24 6.0 T 0.02 0.5 H 0.59 15.0 U 0.110 2.8 J 0.81 20.5 V 0.16 4.0 K 0.55 14.0 W 0.85 21.5 L 0.26 Dia. Dia. 6.5 Rev. 09/09 Applications: £ AC Motor Control £ UPS £ Battery Powered Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM600DY-12NF is a 600V (VCES), 600 Ampere Dual IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 600 12 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM600DY-12NF Dual IGBTMOD™ NF-Series Module 600 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM600DY-12NF Units Tj –40 to 150 °C Junction Temperature Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 600 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts IC 600 Amperes ICM 1200* Amperes IE 600 Amperes Emitter Surge Current** IEM 1200* Amperes Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) PC 1130 Watts Mounting Torque, M6 Main Terminal — 40 in-lb Mounting Torque, M6 Mounting — 40 in-lb — 580 Grams VISO 2500 Volts Collector Current*** (DC, TC´ = 89°C) Peak Collector Current Emitter Current** (TC = 25°C) Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 60mA, VCE = 10V 5.0 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 600A, VGE = 15V, Tj = 25°C — 1.7 2.2 Volts IC = 600A, VGE = 15V, Tj = 125°C — 1.7 — Volts Total Gate Charge QG VCC = 300V, IC = 600A, VGE = 15V — 2400 — nC Emitter-Collector Voltage** VEC IE = 600A, VGE = 0V — — 2.6 Volts Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Min. Typ. Max. Units Input Capacitance Symbol Cies Test Conditions — — 90 nf Output Capacitance Coes — — 11.0 nf Reverse Transfer Capacitance Cres — — 3.6 nf Inductive Turn-on Delay Time td(on) Load Rise Time Switch Turn-off Delay Time Time Fall Time VCE = 10V, VGE = 0V — — 500 ns — — 300 ns tr VCC = 300V, IC = 600A, td(off) VGE1 = VGE2 = 15V, RG = 4.2Ω, — — 750 ns tf Inductive Load — — 300 ns Diode Reverse Recovery Time** trr Switching Operation, — — 250 ns Diode Reverse Recovery Charge** Qrr IE = 600A — 8.7 — µC *Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). ***TC´ measured point is just under the chips. If this value is used, Rth(f-a) should be measured just under the chips. 2 Rev. 09/09 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM600DY-12NF Dual IGBTMOD™ NF-Series Module 600 Amperes/600 Volts Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Symbol Test Conditions Min. Typ. Max. Units Rth(j-c)Q Per IGBT 1/2 Module, TC Reference — — 0.11 °C/W — — 0.18 °C/W — — 0.046 °C/W — 0.02 — °C/W 1.0 — 10 Ω Thermal Resistance, Junction to Case Point per Outline Drawing Rth(j-c)D Per FWDi 1/2 Module, TC Reference Thermal Resistance, Junction to Case Point per Outline Drawing Rth(j-c)’Q Per IGBT 1/2 Module, Contact Thermal Resistance External Gate Resistance 11 300 10 8 0 2 4 6 9 8 3 2 1 0 10 VGE = 15V Tj = 25°C Tj = 125°C 300 0 600 900 8 IC = 1200A 6 IC = 600A IC = 240A 4 2 0 1200 Tj = 25°C 6 8 10 12 14 16 18 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 103 102 tf 102 Cies 101 Coes 1 2 3 4 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) Rev. 09/09 5 100 10-1 102 tr 101 VCC = 300V VGE = ±15V RG = 4.2Ω Tj = 125°C Inductive Load Cres VGE = 0V 0 20 td(off) td(on) SWITCHING TIME, (ns) Tj = 25°C Tj = 125°C 103 101 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 600 0 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 12 104 EMITTER CURRENT, IE, (AMPERES) 15 900 10 4 Tj = 25oC 13 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) CAPACITANCE, Cies, Coes, Cres, (nF) COLLECTOR CURRENT, IC, (AMPERES) VGE = 20V Per 1/2 Module, Thermal Grease Applied RG OUTPUT CHARACTERISTICS (TYPICAL) 1200 TC Reference Point Under Chips Rth(c-f) 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 100 101 102 103 COLLECTOR CURRENT, IC, (AMPERES) 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM600DY-12NF Dual IGBTMOD™ NF-Series Module 600 Amperes/600 Volts REVERSE RECOVERY CHARACTERISTICS (TYPICAL) VCC = 300V VGE = ±15V RG = 4.2Ω Tj = 25°C Inductive Load SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 101 101 102 101 103 102 16 VCC = 200V 12 VCC = 300V 8 4 0 700 0 1400 2100 2800 GATE CHARGE, QG, (nC) SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 100 10-1 101 10-2 ESW(on) ESW(off) 100 100 101 GATE RESISTANCE, RG, (Ω) 4 IC = 600A EMITTER CURRENT, IE, (AMPERES) VCC = 300V VGE = ±15V IC = 600A Tj = 125°C Inductive Load C Snubber at Bus SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 102 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 103 Irr trr NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) REVERSE RECOVERY TIME, trr, (ns) 103 SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) GATE CHARGE VS. VGE 10-3 10-3 10-2 10-1 100 3500 102 VCC = 300V VGE = ±15V RG = 4.2Ω Tj = 125°C Inductive Load C Snubber at Bus 101 ESW(on) ESW(off) 100 101 102 103 COLLECTOR CURRENT, IC, (AMPERES) 101 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.11°C/W (IGBT) Rth(j-c) = 0.18°C/W (FWDi) 10-2 10-5 10-4 10-3 10-3 TIME, (s) Rev. 09/09