CM600DY-24A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTMOD™ A-Series Module 600 Amperes/1200 Volts A F F W G2 B E J N L (4 PLACES) G E2 H E1 C2E1 E2 C1 K K K G G1 P Q P Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. M NUTS (3 PLACES) D Q T THICK U WIDTH P S C V LABEL R G2 E2 C2E1 E2 Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions A 4.33 B C Inches 3.15 Millimeters Dimensions Inches Millimeters 110.0 M M6 Metric M6 80.0 N 1.18 30.0 P 0.71 18.0 Q 0.28 7.0 1.14+0.4/-0.002 29.0+1.0/-0.5 D 3.66±0.01 93.0±0.25 E 2.44±0.01 62.0±0.25 R 0.83 21.2 S 0.33 8.5 F 0.98 25.0 G 0.24 6.0 T 0.02 0.5 U 0.110 2.8 H 0.59 15.0 J 0.81 20.5 V 0.16 4.0 K 0.55 14.0 W 0.85 21.5 L 0.26 Dia. Dia. 6.5 Rev. 11/07 Applications: £ AC Motor Control £ UPS £ Battery Powered Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM600DY-24A is a 1200V (VCES), 600 Ampere Dual IGBTMOD™ Power Module Type Current Rating Amperes VCES Volts (x 50) CM 600 24 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM600DY-24A Dual IGBTMOD™ A-Series Module 600 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Symbol CM600DY-24A Units Tj –40 to 150 °C Junction Temperature Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 1200 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts IC 600 Amperes ICM 1200** Amperes IE 600 Amperes Peak Emitter Current*** IEM 1200** Amperes Maximum Collector Dissipation (TC = 25°C*, Tj ≤ 150°C) PC 3670 Watts Mounting Torque, M6 MainTerminal — 40 in-lb Mounting Torque, M6 Mounting — 40 in-lb — 580 Grams VISO 2500 Volts Collector Current (DC, TC = 80°C*) Peak Collector Current Emitter Current*** (TC = 25°C) Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Static Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Symbol Test Conditions Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V — — 1.0 mA IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 60mA, VCE = 10V 6.0 7.0 8.0 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 600A, VGE = 15V, Tj = 25°C — 2.1 3.0 Volts IC = 600A, VGE = 15V, Tj = 125°C — 2.4 — Volts Total Gate Charge QG VCC = 600V, IC = 600A, VGE = 15V — 2700 — nC Emitter-Collector Voltage** VEC IE = 600A, VGE = 0V — — 3.8 Volts Min. Typ. Max. Units — — 94 nf Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Inductive Turn-on Delay Time td(on) Load Rise Time Switch Turn-off Delay Time Time Fall Time Test Conditions VCE = 10V, VGE = 0V — — 8.0 nf — — 1.8 nf — — 660 ns tr VCC = 600V, IC = 600A, — — 190 ns td(off) VGE1 = VGE2 = 15V, RG = 0.52Ω, — — 700 ns tf Inductive Load — — 350 ns Diode Reverse Recovery Time** trr Switching Operation, — — 250 ns Diode Reverse Recovery Charge** Qrr IE = 600A — 19 — µC *TC, Tf measured point is just under the chips. **Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. ***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Rev. 11/07 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM600DY-24A Dual IGBTMOD™ A-Series Module 600 Amperes/1200 Volts Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case* Rth(j-c)Q Per IGBT 1/2 Module — — 0.034 °C/W Thermal Resistance, Junction to Case* Rth(j-c)D Per FWDi 1/2 Module — — 0.062 °C/W Rth(c-f) Per 1/2 Module, Thermal Grease Applied — 0.018 — °C/W 0.52 — 7.8 Ω Contact Thermal Resistance External Gate Resistance RG *TC, Tf measured point is just under the chips. 15 900 12 600 11 300 10 9 0 0 2 4 6 8 10 4 Tj = 25°C 13 3 2 1 0 10 VGE = 15V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VGE = 20V COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 1200 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 0 600 300 900 8 IC = 1200A 6 IC = 600A 4 IC = 240A 2 0 1200 Tj = 25°C 6 8 10 12 14 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 103 103 102 Tj = 25°C Tj = 125°C 0 1 2 3 4 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) Rev. 11/07 Cies 102 101 SWITCHING TIME, (ns) CAPACITANCE, Cies, Coes, Cres, (nF) td(on) EMITTER CURRENT, IE, (AMPERES) 18 COLLECTOR-CURRENT, IC, (AMPERES) 104 101 16 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) Coes Cres 100 td(off) tf 102 tr VCC = 600V VGE = 15V RG = 0.52Ω Tj = 125°C Inductive Load VGE = 0V 5 10-1 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 101 101 102 103 COLLECTOR CURRENT, IC, (AMPERES) 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM600DY-24A Dual IGBTMOD™ A-Series Module 600 Amperes/1200 Volts REVERSE RECOVERY CHARACTERISTICS (TYPICAL) Irr trr 102 101 103 0 1000 2000 3000 4000 102 103 REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) 102 100 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 10-2 10-1 100 102 Err 101 100 101 VCC = 600V VGE = 15V RG = 0.52Ω Tj = 125°C Inductive Load C Snubber at Bus 102 EMITTER CURRENT, IE, (AMPERES) GATE RESISTANCE, RG, (Ω) 10-3 101 101 REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT (TYPICAL) 101 10-1 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) 0 ESW(on) ESW(off) SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) ESW(on) ESW(off) 10-3 5 102 COLLECTOR CURRENT, IC, (AMPERES) 102 10-2 VCC = 600V 10 VCC = 600V VGE = 15V RG = 0.52Ω Tj = 125°C Inductive Load C Snubber at Bus GATE CHARGE, QG, (nC) VCC = 600V VGE = 15V IC = 600A Tj = 125°C Inductive Load C Snubber at Bus 10-1 VCC = 400V 15 103 EMITTER CURRENT, IE, (AMPERES) 103 100 IC = 600A 103 REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 101 101 SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 102 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 103 VCC = 600V VGE = 15V RG = 0.52Ω Tj = 25°C Inductive Load REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) REVERSE RECOVERY TIME, trr, (ns) 103 SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) GATE CHARGE VS. VGE VCC = 600V VGE = 15V IC = 600A Tj = 125°C Inductive Load C Snubber at Bus 101 Err 100 10-1 100 101 GATE RESISTANCE, RG, (Ω) 101 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.034°C/W (IGBT) Rth(j-c) = 0.062°C/W (FWDi) 10-2 10-5 10-4 10-3 10-3 TIME, (s) 4 Rev. 11/07