CM800DY-24S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual IGBTMOD™ S-Series Module 800 Amperes/1200 Volts A B F E G H J D E M G2 K X X X LABEL N G1 Q P C1 R E1 F E2 B C2E1 E2 N W V NUTS (4 PLACES) L T (4 PLACES) Description: Powerex Dual IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. U NUTS (3 PLACES) Y C AA S Z G2 E2 Di1 Tr2 C2E1 E2 Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking C1 Tr1 Di2 E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 5.51 140.0 P 1.57 40.0 B 5.12 130.0 Q 2.56 65.0 R 0.79 20.0 S 0.32 8.0 C D 1.38+0.04/-0.02 35.0+1.0/-0.5 0.45 11.5 E 0.39 F 4.33±0.001 10.0 G 0.54 H 1.42 J 1.72 43.8 K 0.35 9.0 Dimensions Millimeters T 0.26 Dia. 6.5 Dia. U M8 Metric M8 13.8 V M4 Metric 36.0 W 0.43 11.1 X 1.02 26.0 Y 0.29 7.3 0.16 4.0 110.0±0.25 L 0.59 15.0 Z M 0.80 20.4 AA N 0.57 14.5 3/11 Rev. 0 Inches M4 0.96+0.04/-0.02 24.5+1.0/-0.5 Applications: £ AC Motor Control £ Motion/Servo Control £UPS £ Welding Power Supplies £ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM800DY-24S is a 1200V (VCES), 800 Ampere Dual IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 800 24 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM800DY-24S Dual IGBTMOD™ S-Series Module 800 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM800DY-24S Units Maximum Junction Temperature Operating Junction Temperature Tj(max) +175 °C Tj(op) -40 ~ +150 °C Storage Temperature Tstg -40 ~ +125 °C Case Temperature*2 TC -40 ~ +125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 790 Amperes ICRM 1600 Amperes Ptot 5355 Watts IE*1 790 Amperes IERM*1 1600 Amperes Mounting Torque, M8 Main Terminals – 95 in-lb Mounting Torque, M4 Auxiliary Terminals – 15 in-lb Mounting Torque, M6 Mounting to Heatsink – 40 in-lb Creepage Distance (Terminal to Terminal) ds – mm Creepage Distance (Terminal to Baseplate) ds – mm Clearance (Terminal to Terminal) da – mm Clearance (Terminal to Baseplate) da – mm Weight – 1200 Grams Flatness of Baseplate (On the Centerline X, Y)*7 ec -100 ~ +100 µm Viso 2500 Volts Collector Current (DC, Tc = 117°C)*2,*8 Peak Collector Current (Pulse, Repetitive)*3 Total Power Dissipation (Tc = 25°C)*2,*4 Emitter Current (FWDi Current, Tc = 25°C)*2,*4,*8 Peak Emitter Current (FWDi Current, Pulse, Repetitive)*3 Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 min.) – CONCAVE + CONVEX *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Case temperature (TC) and heatsink temperature (Ts) measured point is just under the chips. *3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *4 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. *6 Typical value is measured by using thermally conductive grease of λ = 0.9 W/(m•K). *7 Baseplate flatness measurement point is as in the following figure. Y X BOTTOM – CONCAVE BOTTOM LABEL SIDE BOTTOM + CONVEX *8 This module has 800A IGBT and FWDi chips. This limitation is based on a package limitation. 2 3/11 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM800DY-24S Dual IGBTMOD™ S-Series Module 800 Amperes/1200 Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Emitter Cutoff Current Symbol Test Conditions Min. Typ. Max. ICES VCE = VCES, VGE = 0V – – 1 Units mA Gate-Emitter Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) 5.4 6.0 6.6 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 80mA, VCE = 10V IC = 800A, VGE = 15V, Tj = 25°C*5 IC = 800A, VGE = 15V, Tj = 125°C*5 – 1.95 2.40 Volts – 2.25 – Volts IC = 800A, VGE = 15V, Tj = 150°C*5 – 2.35 – Volts – 1.70 2.15 Volts (Chip) IC = 800A, VGE = 15V, Tj = 25°C IC = 800A, VGE = 15V, Tj = 125°C – 1.90 – Volts IC = 800A, VGE = 15V, Tj = 150°C – – Volts QG VCC = 600V, IC = 800A, VGE = 15V – VEC*1 IE = 800A, VGE = 0V, Tj = 25°C*5 IE = 800A, VGE = 0V, Tj = 125°C*5 – 1.85 2.30 Volts – 1.85 – Volts 150°C*5 (Terminal) Collector-Emitter Saturation Voltage Gate Charge Emitter-Collector Voltage VCE(sat) (Terminal) IE = 800A, VGE = 0V, Tj = Emitter-Collector Voltage 1.95 1868 – nC – 1.85 – Volts VEC*1 IE = 800A, VGE = 0V, Tj = 25°C – 1.70 2.15 Volts (Chip) IE = 800A, VGE = 0V, Tj = 125°C – 1.70 – Volts IE = 800A, VGE = 0V, Tj = 150°C – 1.70 – Volts Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Turn-on Delay Time td(on) Rise Time Turn-off Delay Time Fall Time Reverse Recovery Time Test Conditions VCE = 10V, VGE = 0V Min. Typ. Max. Units – – 80.0 nF – – 16.0 nF – – 1.32 nF VCC = 600V, IC = 800A, VGE = 15V, – – 800 ns – – 200 ns td(off) RG = 0W, – – 600 ns tf Inductive Load – – 300 ns trr*1 VCC = 600V, IE = 800A, VGE = ±15V, – – 300 ns 42.8 tr *1 Reverse Recovery Charge Qrr RG = 0W, Inductive Load – – µC Turn-on switching Energy (Per Pulse) Eon VCC = 600V, IC = IE = 800A, – 107 – mJ Turn-off Switching Energy (Per Pulse) Eoff VGE = ±15V, RG = 0W, – 82 – mJ Reverse Recovery Energy (Per Pulse) Err*1 Tj = 150°C, Inductive Load – 71 – mJ Main Terminals-Chip, – – 0.4 mW – 2.45 – Internal Lead resistance RCC' + EE' Per Switch, TC = 25°C*2 Internal Gate Resistance rg Per Switch W *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Case temperature (TC) and heatsink temperature (Ts) measured point is just under the chips. *5 Pulse width and repetition rate should be such as to cause negligible temperature rise. 3/11 Rev. 0 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM800DY-24S Dual IGBTMOD™ S-Series Module 800 Amperes/1200 Volts Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Thermal Resistance, Junction to Case*2 Rth(j-c)Q Per IGBT – – 0.028 °C/W Case*2 Rth(j-c)R Per FWDi – – 0.045 °C/W Rth(c-s) Case to Heatsink,Per 1/2 Module, – 0.015 – °C/W Thermal Resistance, Junction to Contact Thermal Resistance*2 Max. Units Thermal Grease Applied*6 Recommended Operating Conditions, Ta = 25 °C unless otherwise specified Characteristics DC Supply Voltage Gate (-Emitter Drive) Voltage External Gate Resistance Symbol Test Conditions Min. VCC Applied Across C1-E2 – Typ. VGE(on) Applied Across G1-Es1/G2-Es2 13.5 15.0 16.5 Volts RG Per Switch 0 – 5.1 W 600 Max. 850 Units Volts *2 Case temperature (TC) and heatsink temperature (Ts) measured point is just under the chips. *6 Typical value is measured by using thermally conductive grease of λ = 0.9 W/(m•K). 4 3/11 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM800DY-24S Dual IGBTMOD™ S-Series Module 800 Amperes/1200 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Tj = 25°C 13.5 VGE = 20V 15 12 1200 11 800 10 400 0 2 4 6 8 1.5 1.0 0.5 0 400 800 1200 6 IC = 800A 4 IC = 320A 2 0 1600 IC = 1600A 0 4 8 12 16 GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 102 102 SWITCHING TIME, td(on), tr, td(off), tf, (ns) CAPACITANCE, Cies, Coes, Cres, (nF) 103 103 103 VGE = 15V Tj = 25°C Tj = 125°C Tj = 150°C Cies 101 Coes 100 Cres VGE = 0V f = 1MHz 0 0.5 1.0 1.5 2.0 2.5 10-1 10-1 3.0 100 101 td(off) tf 102 VCC = 600V VGE = ±15V RG = 0Ω Tj = 125°C Inductive Load 101 101 102 tr 102 103 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) 103 td(off) td(on) tf 102 VCC = 600V VGE = ±15V RG = 0Ω Tj = 150°C Inductive Load 101 101 tr 102 COLLECTOR CURRENT, IC, (AMPERES) 3/11 Rev. 0 103 104 td(on) td(off) tr tf 102 101 10-1 20 td(on) EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) SWITCHING TIME, td(on), tr, td(off), tf, (ns) EMITTER CURRENT, IE, (AMPERES) 2.0 8 COLLECTOR-CURRENT, IC, (AMPERES) 103 SWITCHING TIME, td(on), tr, td(off), tf, (ns) 2.5 Tj = 25°C COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 104 101 3.0 0 10 10 VGE = 15V Tj = 25°C Tj = 125°C Tj = 150°C VCC = 600V VGE = ±15V IC = 800A Tj = 125°C Inductive Load 100 101 GATE RESISTANCE, RG, (Ω) 102 SWITCHING TIME, td(on), tr, td(off), tf, (ns) 0 9 3.5 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 1600 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) OUTPUT CHARACTERISTICS (TYPICAL) td(on) td(off) tr 103 tf 102 101 100 VCC = 600V VGE = ±15V IC = 800A Tj = 150°C Inductive Load 101 102 GATE RESISTANCE, RG, (Ω) 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM800DY-24S Dual IGBTMOD™ S-Series Module 800 Amperes/1200 Volts 102 100 101 101 101 102 IC = 800A VCC = 600V 15 101 100 103 102 500 1000 1500 2000 2500 3000 GATE CHARGE, QG, (nC) 101 101 100 10-3 10-5 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.028°C/W 10-4 10-3 10-2 TIME, (s) 10-1 100 101 100 103 102 EMITTER CURRENT, IE, (AMPERES) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT Part) 10-2 5 102 102 VCC = 600V VGE = ±15V RG = 0Ω Tj = 150°C Inductive Load trr Irr EMITTER CURRENT, IE, (AMPERES) 10-1 10 103 REVERSE RECOVERY TIME, trr, (ns) 102 102 VCC = 600V VGE = ±15V RG = 0Ω Tj = 125°C Inductive Load trr Irr REVERSE RECOVERY CURRENT, Irr, (AMPERES) 103 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 101 REVERSE RECOVERY CHARACTERISTICS (TYPICAL) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) GATE-EMITTER VOLTAGE, VGE, (VOLTS) 100 REVERSE RECOVERY CHARACTERISTICS (TYPICAL) GATE CHARGE, VGE 6 101 10-1 103 SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) GATE RESISTANCE, RG, (Ω) 0 Eon Eoff Err GATE RESISTANCE, RG, (Ω) Eon Eoff Err 0 102 COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) 102 20 102 VCC = 600V VGE = ±15V IC = 800A Tj = 125°C Inductive Load COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) VCC = 600V VGE = ±15V IC = 800A Tj = 150°C Inductive Load 101 10-1 101 101 103 103 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi Part) 100 Zth = Rth • (NORMALIZED VALUE) 103 102 102 VCC = 600V VGE = ±15V RG = 0Ω Tj = 150°C Inductive Load Eon Eoff Err NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) 102 103 SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) SWITCHING ENERGY, Eon, Eoff, Err, (mJ/PULSE) VCC = 600V VGE = ±15V RG = 0Ω Tj = 125°C Inductive Load Eon Eoff Err 101 101 SWITCHING ENERGY, Eon, Eoff, Err, (mJ/PULSE) SWITCHING ENERGY, Eon, Eoff, Err, (mJ/PULSE) 103 SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) REVERSE RECOVERY TIME, trr, (ns) SWITCHING ENERGY, Eon, Eoff, Err, (mJ/PULSE) SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) 10-1 10-2 10-3 10-5 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.045°C/W 10-4 10-3 10-2 10-1 100 101 TIME, (s) 3/11 Rev. 0