RECTRON BAV99 SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE FEATURES Silicon epitaxial planar diode Fast switching Surface mounting device "A7" Device marking .020 (0.50) .070 (1.78) * Weight : apporx. 0.008g .110 (2.80) .081 (2.04) .119 (3.04) (B) .055 (1.40) .047 (1.20) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. (C) (A) (C) (A) .102 (2.60) .083 (2.10) R0.05 (.002) .045 (1.15) .033 (0.85) .028 (0.70) .014 (0.35) .003 (0.08) * Epoxy : Device has UL flammability classification 94V-0 .007 (0.17) MECHANICAL DATA .015 (0.37) SOT-23 .040 (1.02) .035 (0.88) * * * * Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) MAXIMUM RATINGS (At TA = 25oC unless otherwise noted) SYMBOL BAV99 UNITS VRRM 70 Volts Forward Continuous Current at T A=25 C IF 215 mA Repetitive Peak Forward Current at T A=25 o C IFRM 450 mA Surge Forward Current at tp < 1 ms, at T =25 oC IFSM 1000 mA Total Power Dissipation PD 250 mW Junction Temperature TJ 150 TSTG -65 to + 150 RATINGS Repetitive Peak Reverse Voltage o A Storage Temperature Range 0 C 0 C 2008-10 ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS SYMBOL Value Unit Reverse Breakdown Voltage V(BR)R 70 V VF(1) 715 mV If=1mA VF(2) 855 mV If=10mA VF(3) 1000 mV IF=50mA Testing Condition Ir=100uA Forward Voltage 1250 mV 2.5 uA CT 1.5 pF Trr 6 nS VF(4) Reverse Current IR Total Capacitance Reverse Recovery Time If=150mA Vr=70V Vr=0V,F=1MHZ If=Ir=10mA,RL=100 ohm, measured at ir=1mA CHARACTERISTIC CURVES FIG. 1 - FORWARD CURRENT & FORWARD VOLTAGE FIG. 2 - DIODE CAPACITANCE 500 DIODE CAPACITANCE,Cd (pF) FORWARD CURRENT, iF(mA) 200 400 300 200 100 100 60 40 20 10 6 4 2 1 .1 0 0 400 800 1200 1600 2000 .2 .4 1.0 2 4 10 20 REVERSE VOLTAGE, ( V ) 40 FORWARD VOLTAGE,VF (mV ) RECTRON 100