(7 0 Ω ) E 2SB1587 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2438) Unit Conditions Ratings Unit –160 V ICBO VCB=–160V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA VEBO –5 V V(BR)CEO IC=–30mA –150min V IC –8 A hFE VCE=–4V, IC=–6A 5000min∗ IB –1 A VCE(sat) IC=–6A, IB=–6mA –2.5max PC 75(Tc=25°C) W VBE(sat) IC=–6A, IB=–6mA –3.0max V Tj 150 °C fT VCE=–12V, IE=1A 65typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 160typ pF Tstg 3.0 3.3 1.75 IC (A) 1.05 +0.2 -0.1 5.45±0.1 10 –60 –6 5 –10 4.4 B 0.9typ 3.6typ C Weight : Approx 6.5g a. Part No. b. Lot No. E I C – V BE Temperature Characteristics (Typical) 0 0 –2 –4 0 –0.2 –6 –0.5 –1 –5 –10 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 40,000 50000 10,000 5,000 –1 –5 –8 Transient Thermal Resistance Typ DC C urrent G ain h FE 25˚C 10000 –30˚C 5000 1000 –0.2 –0.5 Collector Current I C (A) –1 –5 0.2 –8 C m s s –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 mp) nk 8 si 5 40 at –0.1 he Without Heatsink Natural Cooling 60 ite Collecto r Cur rent I C (A) D 10 0m –0.5 –0.05 –2 e Te P c – T a Derating –1 20 500 1000 fin 40 Cas 50 100 Time t(ms) In 60 50 10 ith Typ 1 5 W Cut- off F req uenc y f T (MH Z ) 10 –5 0.5 1 80 –10 Emitter Current I E (A) p) 0.5 –20 80 ) 1 Safe Operating Area (Single Pulse) 100 –3 4 (V C E =–12V) 0.1 –2 Collector Current I C (A) f T – I E Characteristics (Typical) 0.05 –1 θ j-a – t Characteristics M aximum Po wer Dissipat io n P C (W) DC Curr ent Gain h F E 125˚C 0 0.02 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.5 0 –50 –100 –200 Base Current I B (mA) h FE – I C Characteristics (Typical) 2,000 –0.2 Tem –2 Collector-Emitter Voltage V C E (V) emp –1 –4 ˚C ( –2 –6A I C =–4A se T I B =–0.3mA –8A –6 –30 –0.5m A –4 –2 se –0.8m A (Ca –1 .0 mA –6 (V C E =–4V) –8 –3 (Ca A – 1 .5 m –1. 3m A 25˚C A ˚C – 1 .8 m 125 mA θ j- a ( ˚C/W) –2.0 Collector Current I C (A) .5 Collector-Emitter Saturation Voltage V C E (s at) (V ) Collector Current I C (A) –10 –8 –2 mA m A V CE ( sat ) – I B Characteristics (Typical) 3.35 1.5 tf (µs) tstg (µs) 0.7typ 6 –6 I C – V CE Characteristics (Typical) ton (µs) IB2 (mA) 0.65 +0.2 -0.1 5.45±0.1 1.5 IB1 (mA) VBB2 (V) VBB1 (V) 0.8 2.15 ■Typical Switching Characteristics (Common Emitter) RL (Ω) 3.45 ±0.2 ø3.3±0.2 a b V ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) VCC (V) 5.5±0.2 5.5 15.6±0.2 23.0±0.3 Symbol 0.8±0.2 Ratings VCBO Symbol External Dimensions FM100(TO3PF) (Ta=25°C) 1.6 ■Electrical Characteristics (Ta=25°C) C Application : Audio, Series Regulator and General Purpose 9.5±0.2 ■Absolute maximum ratings Equivalent circuit 16.2 Darlington B 20 3.5 0 Without Heatsink 0 25 50 75 100 Ambient Temperature Ta(˚C) 125 150 2000