2SC2837 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1186) VCB=150V 100max µA V IEBO VEB=5V 100max µA IC=25mA 150min V hFE VCE=4V, IC=3V 50min∗ V 2 A VCE(sat) IC=5A, IB=0.5A PC 100(Tc=25°C) W fT VCE=12V, IE=–1A 70typ MHz Tj 150 °C COB VCB=80V, f=1MHz 60typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 20.0min IB Tstg IC (A) VB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 60 12 5 –5 500 –500 0.2typ 1.4typ 0.35typ I B =20mA 2 0 0 1 2 3 0 4 0 0.5 1.0 1.5 0 2.0 (V C E =4V) 200 200 1 25˚C 100 –30˚C 50 20 0.02 10 Transient Thermal Resistance D C Cur r ent Gai n h F E Typ 50 0.05 0.1 0.5 f T – I E Characteristics (Typical) 1 5 10 3 1 0.5 0.2 1 10 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) (V C E =12V) 2 θ j-a – t Characteristics Collector Current I C (A) Collector Current I C (A) P c – T a Derating 100 30 m s 100 Collector-Emitter Voltage V C E (V) 200 nk 10 si 2 50 at –6 he –1 ite 0.2 –0.1 Emitter Current I E (A) 60 Without Heatsink Natural Cooling 0.5 20 0 –0.02 1 fin 40 C In 60 D 5 ith Collector Curre nt I C ( A) 10 Typ 80 W M aximum Power Dissipa ti on P C (W) 10 100 Cu t-off Fr eque ncy f T ( MH Z ) DC Curr ent Gain h FE 125˚C 120 1 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) (V C E =4V) 0.1 0 Base Current I B (A) h FE – I C Characteristics (Typical) 20 0.02 p) 2 5A Collector-Emitter Voltage V C E (V) 100 4 em I C =10A 1 eT 40mA as 4 6 (C 80mA 2 5˚C 12 0m A 6 8 12 A A 160m (V CE =4V) 10 3 Collector Current I C (A) 200m 8 Collector Current I C (A) A 1.4 E I C – V BE Temperature Characteristics (Typical) θ j - a (˚ C/W) 300m C Weight : Approx 6.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) A 0.65 +0.2 -0.1 5.45±0.1 B RL (Ω) m 400 2 3 5.45±0.1 VCC (V) 10 ø3.2±0.1 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) a b 2.0max p) V(BR)CEO A Tem V 10 se 5 IC (Ca VEBO 2.0±0.1 ˚C 150 4.8±0.2 –30 VCEO 15.6±0.4 9.6 ˚C V 25 150 1.8 ICBO VCBO 2.0 Unit Symbol External Dimensions MT-100(TO3P) (Ta=25°C) Ratings Unit 5.0±0.2 ■Electrical Characteristics Conditions Ratings 19.9±0.3 Symbol 4.0 ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 4.0max LAPT 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150