SANKEN 2SC4706_01

2SC4706
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)
100max
µA
VCEO
600
V
IEBO
VEB=7V
100max
µA
7
V
V(BR)CEO
IC=10mA
600min
V
14(Pulse28)
A
hFE
VCE=4V, IC=7A
10 to 25
IB
7
A
VCE(sat)
IC=7A, IB=1.4A
0.5max
PC
130(Tc=25°C)
W
VBE(sat)
IC=7A, IB=1.4A
1.2max
V
Tj
150
°C
fT
VCE=12V, IE=–1.5A
6typ
MHz
–55to+150
°C
COB
VCB=10V, f=1MHz
160typ
pF
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
250
35.7
7
10
–5
1.05
–3.5
1max
5max
0.7max
I B =100mA
2
0
1
0
2
3
2
Temp
V C E (sat)
0.05 0.1
Collector-Emitter Voltage V C E (V)
0.5
1
5
0
10
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-Emittor Voltage V B E (V)
Collector Current I C (A)
h FE – I C Temperature Characteristics (Typical)
)
)
4
0
0.02
4
6
(Case
200mA
4
V B E (sat)
8
–55˚C
6
1
mp)
400m A
emp
8
10
eT
600mA
12
Cas
10
I C /I B =5 Const.
˚C (
800mA
(V CE =4V)
14
2
125
12
1.4
E
I C – V BE Temperature Characteristics (Typical)
Collector Current I C (A)
1.2 A
C
Weight : Approx 6.0g
a. Part No.
b. Lot No.
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s a t) (V )
Base-Emitter Saturation Voltage V B E (s at) (V)
A
0.65 +0.2
-0.1
5.45±0.1
B
IC
(A)
6
1.
Collector Current I C (A)
5.45±0.1
RL
(Ω)
14
2
3
1.05 +0.2
-0.1
■Typical Switching Characteristics (Common Emitter)
I C – V CE Characteristics (Typical)
ø3.2±0.1
b
V
VCC
(V)
2.0±0.1
e Te
Tstg
a
4.8±0.2
(Cas
IC
25˚C
VEBO
15.6±0.4
9.6
1.8
Unit
VCB=800V
5.0±0.2
Ratings
ICBO
2.0
Conditions
V
4.0
Unit
900
19.9±0.3
Ratings
VCBO
Symbol
External Dimensions MT-100(TO3P)
(Ta=25°C)
4.0max
Symbol
■Electrical Characteristics
20.0min
■Absolute maximum ratings (Ta=25°C)
Application : Switching Regulator and General Purpose
θ j-a – t Characteristics
t on •t stg • t f – I C Characteristics (Typical)
(V C E =4V)
8
t o n• t s t g• t f (µ s)
50
25˚C
Sw it ching Time
–55˚C
10
5
0.02
0.05
0.1
0.5
1
5
10 14
5
V C C 250V
I C :I B1 :–I B2 =10:1.5:5
1
t on
0.5
tf
0.1
0.2
0.5
10
0µ
14
P c – T a Derating
130
s
500
Collector-Emitter Voltage V C E (V)
1000
Collector Curr ent I C (A)
nk
100
si
0.1
50
at
Collector-Emitter Voltage V C E (V)
1000
he
500
ite
100
fin
50
0.5
Without Heatsink
Natural Cooling
L=3mH
IB2=–1.0A
Duty:less than 1%
In
Without Heatsink
Natural Cooling
1
ith
1
5
100
W
10
10
Collector Cur rent I C (A)
10
50
50
118
5
Reverse Bias Safe Operating Area
Safe Operating Area (Single Pulse)
0.1
10
1
Collector Current I C (A)
Collector Current I C (A)
0.5
t s tg
Ma xim um Powe r Dissipat io n P C (W)
DC C urrent G ain h FE
125˚C
50
3.5
0
Without Heatsink
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150