2SA1419 / 2SC3649 Ordering number : EN2007C SANYO Semiconductors DATA SHEET 2SA1419/2SC3649 Features PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s • • • Specifications ( ) : 2SA1419 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCEO (--)180 V (--)160 V (--)6 V Collector Current VEBO IC (--)1.5 A Collector Current (Pulse) ICP (--)2.5 Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg 500 When mounted on ceramic substrate (250mm2×0.8mm) 1.5 W 150 °C --55 to +150 °C Package Dimensions Product & Package Information unit : mm (typ) 7007B-004 • Package : PCP • JEITA, JEDEC : SC-62, SOT-89, TO-243 • Minimum Packing Quantity : 1,000 pcs./reel Top View 4.5 1.6 2.5 1.0 1 2 0.4 4.0 1.5 3 2SA1419S-TD-E 2SA1419S-TD-H 2SA1419T-TD-E 2SA1419T-TD-H 2SC3649S-TD-E 2SC3649S-TD-H 2SC3649T-TD-E 2SC3649T-TD-H A mW Packing Type: TD TD Marking 3.0 RANK RANK 2SA1419 0.75 2SC3649 Electrical Connection 2 1 : Base 2 : Collector 3 : Emitter Bottom View LOT No. AE 1.5 CE 0.5 LOT No. 0.4 SANYO : PCP 1 2 1 3 2SA1419 3 2SC3649 http://www.sanyosemi.com/en/network/ 82212 TKIM/31010CB TKIM/O3103TN (KT)/71598HA (KT)/4277TA, TS No.2007-1/7 2SA1419 / 2SC3649 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO hFE1 Emitter Cutoff Current DC Current Gain VCE=(--)5V, IC=(--)100mA VCE=(--)5V, IC=(--)10mA fT Cob Output Capacitance Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time 100* max Unit (--)1 μA (--)1 μA 400* 80 120 VCB=(--)10V, f=1MHz IC=(--)500mA, IB=(--)50mA V(BR)CBO V(BR)CEO Collector-to-Emitter Breakdown Voltage typ VCE=(--)10V, IC=(--)50mA VCE(sat) VBE(sat) Base-to-Emitter Saturation Voltage Ratings min VCB=(--)120V, IE=0A VEB=(--)4V, IC=0A hFE2 Gain-Bandwidth Product Conditions IC=(--)500mA, IB=(--)50mA IC=(--)10μA, IE=0A IC=(--)1mA, RBE=∞ V(BR)EBO ton IE=(--)10μA, IC=0A tstg tf See specified Test Circuit. MHz (22)14 pF (--200)130 (--500)450 (--)0.85 (--)1.2 mV V (--)180 V (--)160 V (--)6 V (40)40 ns (0.7)1.2 μs (40)80 ns * : The 2SA1419 / 2SC3649 are classified by 100mA hFE as follows : Rank R S T hFE 100 to 200 140 to 280 200 to 400 Switching Time Test Circuit IB1 PW=20μs D.C.≤1% IB2 INPUT RB RL VR 50Ω + 100μF + 470μF --5V 100V IC=10IB1=--10IB2=0.7A (For PNP, the polarity is reversed) Ordering Information Package Shipping memo 2SA1419S-TD-E Device PCP 1,000pcs./reel Pb Free 2SA1419S-TD-H PCP 1,000pcs./reel Pb Free and Halogen Free 2SA1419T-TD-E PCP 1,000pcs./reel Pb Free 2SA1419T-TD-H PCP 1,000pcs./reel Pb Free and Halogen Free 2SC3649S-TD-E PCP 1,000pcs./reel Pb Free 2SC3649S-TD-H PCP 1,000pcs./reel Pb Free and Halogen Free 2SC3649T-TD-E PCP 1,000pcs./reel Pb Free 2SC3649T-TD-H PCP 1,000pcs./reel Pb Free and Halogen Free No.2007-2/7 2SA1419 / 2SC3649 IC -- VCE --1.8 2SC3649 --1.6 1.6 --0.6 A --80m A --60m A m 0 4 -A --20m A m --10 --5mA --0.4 --2mA --1.2 --1.0 --0.8 1.2 1.0 0.6 --1 --2 --3 1mA 0.2 IB=0mA --4 0 --5 Collector-to-Emitter Voltage, VCE -- V 0 1 --2.0mA --0.4 --1.5mA --1.0mA m A mA 2SC3649 2.5mA 2.0mA 1.5mA 0.4 1.0mA 0.2 --0.5mA Collector Current, IC -- A 50 ITR03574 IC -- VBE 0.8 0.4 0 25°C --25°C 5 0.2 0.4 0.6 0.8 1.0 1.2 ITR03576 hFE -- IC 1000 2SC3649 VCE=5V 7 5 Ta=75°C 3 2 25°C 100 --25°C 7 5 3 3 2 2 --5 --7--0.01 --2 --3 --5 --7--0.1 --2 --3 --5 --7 --1.0 --2 --3 ITR03577 Collector Current, IC -- A 0 Base-to-Emitter Voltage, VBE -- V DC Current Gain, hFE Ta=75°C Ta= 75°C 25°C --25°C °C 25°C --25°C Collector Current, IC -- A Ta= 75 2SA1419 VCE=--5V 5 10 40 1.2 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Base-to-Emitter Voltage, VBE -- V ITR03575 7 7 30 2SC3649 VCE=5V hFE -- IC 100 20 1.6 2SA1419 VCE=--5V 0 10 Collector-to-Emitter Voltage, VCE -- V IC -- VBE --0.4 2 IB=0mA 0 ITR03573 --0.8 3 0 --50 --1.2 1000 DC Current Gain, hFE 0.5mA IB=0mA --10 --20 --30 --40 Collector-to-Emitter Voltage, VCE -- V 0 0 0 5 ITR03572 3.0mA 0.6 --0.2 --1.6 4 4.0mA 3.5mA 4.5 0.8 Collector Current, IC -- A Collector Current, IC -- A 2SA1419 --0.6 3 IC -- VCE 1.0 A --5.0m m --4.5 A --4.0mA --3.5mA --3.0mA --2.5mA --0.8 2 Collector-to-Emitter Voltage, VCE -- V ITR03571 IC -- VCE --1.0 2mA 0.4 IB=0mA 0 0 10mA 5mA 0.8 --1mA --0.2 50mA 40mA 30mA 20mA 1.4 5.0 --1.4 Collector Current, IC -- A Collector Current, IC -- A IC -- VCE 1.8 2SA1419 10 7 0.01 2 3 5 7 0.1 2 3 5 Collector Current, IC -- A 7 1.0 2 3 ITR03578 No.2007-3/7 2SA1419 / 2SC3649 f T -- IC 5 Cob -- VCB 100 2SA1419 / 2SC3649 7 3 Output Capacitance, Cob -- pF Gain-Bandwidth Product, f T -- MHz 2SA1419 / 2SC3649 2SC3649 2 2SA1419 100 7 5 3 2 5 2SA 3 141 2SC 364 9 10 7 5 For PNP, minus sign is omitted For PNP, minus sign is omitted 10 0.01 2 3 5 7 2 0.1 3 5 7 Collector Current, IC -- A Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 5 3 2 25°C --100 °C Ta=75 --25°C 3 7 --0.01 2 3 5 7 --0.1 2 3 5 Collector Current, IC -- A 7 25°C 3 5 75°C 7 2 3 5 --0.1 Collector Current, IC -- A 7 --1.0 2 DC 3 2 tio n For PNP, minus sign is omitted Single pulse Ta=25°C Mounted on a ceramic board (250mm2✕0.8mm) 2 3 5 7 10 2 --25°C 7 0.01 2 3 5 7 0.1 3 5 7 100 Collector-to-Emitter Voltage, VCE -- V 2 3 5 7 1.0 3 VBE(sat) -- IC 2SC3649 IC / IB=10 5 3 2 Ta=--25°C 1.0 7 25°C 5 7 0.01 2 3 5 7 0.1 75°C 2 3 5 7 1.0 Collector Current, IC -- A 2 3 ITR03584 PC -- Ta M 1.4 ou nt 1.2 ed on ac er 1.0 am ic 0.8 bo ar d( 25 0.6 No h 0.4 0m m2 ✕ 0.8 eat s ink m 3 ITR03585 0 m ) 0.2 2 2 ITR03582 2SA1419 / 2SC3649 era 7 1.0 Ta=75°C 5 1.6 3 2 0.01 7 5 7 1.8 op 0.1 7 5 25°C 100 ITR03583 2SA1419 / 2SC3649 1m 10 s m s 10 0m s 1.0 7 5 2 3 3 ASO ICP=2.5A IC=1.5A 3 Collector Current, IC -- A Base-to-Emitter Saturation Voltage, VBE(sat) -- V 7 5 5 7 Ta=--25°C 7 100 ITR03580 2SC3649 IC / IB=10 10 2 3 2 5 7 2 3 Collector Dissipation, PC -- W Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 3 5 Collector Current, IC -- A --1.0 5 2 3 VCE(sat) -- IC ITR03581 7 --0.01 2 10 3 2SA1419 IC / IB=10 7 7 1000 VBE(sat) -- IC --10 --1.0 5 2 7 5 3 3 --1000 7 2 Collector-to-Base Voltage, VCB -- V 2SA1419 IC / IB=10 2 3 3 1.0 2 1.0 ITR03579 VCE(sat) -- IC 3 2 9 2 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR03586 No.2007-4/7 2SA1419 / 2SC3649 Bag Packing Specification 2SA1419S-TD-E, 2SA1419S-TD-H, 2SA1419T-TD-E, 2SA1419T-TD-H, 2SC3649S-TD-E, 2SC3649S-TD-H, 2SC3649T-TD-E, 2SC3649T-TD-H No.2007-5/7 2SA1419 / 2SC3649 Outline Drawing Land Pattern Example 2SA1419S-TD-E, 2SA1419S-TD-H, 2SA1419T-TD-E, 2SA1419T-TD-H, 2SC3649S-TD-E, 2SC3649S-TD-H, 2SC3649T-TD-E, 2SC3649T-TD-H Mass (g) Unit 0.058 mm Unit: mm * For reference 0.9 2.2 3.7 45° 45° 1.0 1.8 1.5 1.0 1.5 3.0 No.2007-6/7 2SA1419 / 2SC3649 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of August, 2012. Specifications and information herein are subject to change without notice. PS No.2007-7/7