SANYO 2SC4027

2SA1552 / 2SC4027
Ordering number : EN2262D
SANYO Semiconductors
DATA SHEET
PNP / NPN Epitaxial Planar Silicon Transistors
2SA1552 / 2SC4027
High-Voltage Switching
Applications
Applications
•
Converters, inverters, color TV audio output.
Features
•
•
•
•
Adoption of FBET, MBIT processes.
High voltage and large current capacity.
Ultrahigh-speed switching.
Small and slim package permitting 2SA1552 / 2SC4027-applied sets to be made more compact.
Specifications ( ) : 2SA1552
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)180
V
Collector-to-Emitter Voltage
VCEO
(--)160
V
Emitter-to-Base Voltage
VEBO
(--)6
V
IC
(--)1.5
A
ICP
(--)2.5
A
1
W
Collector Current
Collector Current (Pulse)
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Tc=25°C
15
W
150
°C
--55 to +150
°C
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
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91708 TI IM TC-00001624 / D0505CB MS IM X-0448 / 53002RM (KT) / 72098HA (KT) / 8109MO / 5137TA, TS No.2262-1/5
2SA1552 / 2SC4027
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
Collector Cutoff Current
ICBO
VCB=(--)120V, IE=0A
(--)1.0
μA
Emitter Cutoff Current
IEBO
hFE1
VEB=(--)4V, IC=0A
(--)1.0
μA
DC Current Gain
Gain-Bandwidth Product
hFE2
fT
Output Capacitance
Cob
Collector-to-Emitter Saturation Voltage
VCE(sat)
Base-to-Emitterr Saturation Voltage
VBE(sat)
Collector-to-Base Breakdown Voltage
V(BR)CBO
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
Emitter-to-Base Breakdown Voltage
V(BR)EBO
Turn-On Time
Storage Time
Fall Time
ton
tstg
tf
VCE=(--)5V, IC=(--)100mA
100*
VCE=(--)5V, IC=(--)10mA
400*
80
VCE=(--)10V, IC=(--)50mA
VCB=(--)10V, f=1MHz
120
MHz
(22)12
IC=(--)500mA, IB=(--)50mA
IC=(--)500mA, IB=(--)50mA
IC=(--)10μA, IE=0A
IC=(--)1mA, RBE=∞
IE=(--)10μA, IC=0A
See specified Test Circuit.
pF
(--0.2)0.13
(--0.5)0.45
V
(--)0.85
(--)1.2
V
(--)180
V
(--)160
V
(--)6
V
60
ns
See specified Test Circuit.
(0.7)1.2
μs
See specified Test Circuit.
(50)80
ns
* ; The 2SA1552 / 2SC4027 are classified by 100mA hFE as follws:
Rank
R
S
T
100 to 200
140 to 280
200 to 400
Package Dimensions
Package Dimensions
unit : mm (typ)
7518-003
unit : mm (typ)
7003-003
5.5
0.85
0.7
0.5
1.5
1.5
7.0
4
5.5
4
2.3
6.5
5.0
0.5
7.0
2.3
6.5
5.0
0.5
1
2
2.3
0.8
1
7.5
0.8
1.6
0.6
1 : Base
2 : Collector
3 : Emitter
4 : Collector
2.3
2
3
0 to 0.2
0.6
0.5
3
2.5
0.85
1.2
SANYO : TP
1.2
hFE
1.2
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
OUTPUT
RB
INPUT
IB2
VR
50Ω
+
100μF
--5V
RL
14kΩ
+
470μF
100V
10IB1= --10IB2=IC=0.7A
For PNP, the polarity is reversed.
No.2262-2/5
2SA1552 / 2SC4027
IC -- VCE
--1.8
2SC4027
1.6
--1.2
--1.0
--0.8
--0.6
--0.4
--2mA
--0.2
--1mA
Collector Current, IC -- A
A
--80m
A
m
0
--6
A
m
0
--4
A
--20m
A
--10m
A
m
--5
--1.4
IB=0mA
0
0
--1
--2
--3
--4
2mA
0.4
1mA
IB=0mA
1
2
mA
--1.5mA
--1.0mA
3
4
--0.2
0.8
A
4.5m mA
4.0
3.5mA
2SC4027
3.0mA
2.5mA
0.6
2.0mA
1.5mA
0.4
1.0mA
0.2
--0.5mA
--10
--20
--30
--40
Collector-to-Emitter Voltage, VCE -- V
0
10
Collector Current, IC -- A
Ta=
75°C
25°C
--25°C
--0.8
--0.4
30
40
50
ITR03972
IC -- VBE
1.6
2SA1552
VCE= --5V
--1.2
20
Collector-to-Emitter Voltage, VCE -- V
ITR03971
IC -- VBE
--1.6
IB=0mA
0
--50
2SC4027
VCE=5V
1.2
0.8
Ta=
75°C
25°C
--25°C
0
Collector Current, IC -- A
0.5mA
IB=0mA
0
0.4
0
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
Base-to-Emitter Voltage, VBE -- V
0.8
1.0
5
25°C
7
5
3
2
1.2
ITR03974
2SC4027
VCE=5V
7
Ta=75°C
--25°C
0.6
hFE -- IC
1000
2
100
0.4
Base-to-Emitter Voltage, VBE -- V
DC Current Gain, hFE
5
0.2
ITR03973
2SA1552
VCE= --5V
7
3
0
--1.2
hFE -- IC
1000
DC Current Gain, hFE
5
ITR03970
IC -- VCE
5.0
--2.0mA
--0.4
0.6
1.0
A
--5.0m
--4.5mA
A
--4.0m
--3.5mA
--3.0mA
--2.5mA
--0.6
10mA
5mA
0.8
Collector-to-Emitter Voltage, VCE -- V
2SA1552
--0.8
1.0
ITR03969
IC -- VCE
--1.0
1.2
0
0
--5
Collector-to-Emitter Voltage, VCE -- V
50mA
40mA
30mA
20mA
1.4
0.2
Collector Current, IC -- A
Collector Current, IC -- A
--1.6
Collector Current, IC -- A
IC -- VCE
1.8
2SA1552
Ta=75°C
25°C
--25°C
100
7
5
3
3
2
2
10
10
5 7 --0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
Collector Current, IC -- A
2
3
ITR03975
7 0.01
2
3
5
7 0.1
2
3
5
Collector Current, IC -- A
7 1.0
2
3
ITR03976
No.2262-3/5
2SA1552 / 2SC4027
f T -- IC
3
27
2
5
2SA15
100
7
5
3
2
For PNP minus sign is omitted.
2
3
5
7
3
5
7
155
2
2SC
2
402
7
10
7
3
1.0
2
1.0
ITR03977
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
7
5
3
2
--100
7
Ta=75°C
3
25¡C
--25°C
2
7 --0.01
2
7
2
10
3
5
3
5
7 --0.1
2
3
5
7 --1.0
2
7
5
3
2
100
7
Ta=75°C
5
25°C
--25°C
7 0.01
2
3
7 0.1
2
3
5
7 1.0
5
3
2
--1.0
Ta=--25°C
7
25°C
2
3
ITR03980
VBE(sat) -- IC
2SC4027
IC / IB=10
7
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
7
5
Collector Current, IC -- A
10
2SA1552
IC / IB=10
75°C
1000
ITR03979
VBE(sat) -- IC
--10
100
2SC4027
IC / IB=10
2
3
7
ITR03978
VCE(sat) -- IC
3
Collector Current, IC -- A
5
5
2
--1000
5
3
3
2SA1552
IC / IB=10
2
2
Collector-to-Base Voltage, VCB -- V
VCE(sat) -- IC
3
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2SA
3
For PNP minus sign is omitted.
2
0.1
Collector Current, IC -- A
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
5
5
10
0.01
5
3
2
1.0
25°C
Ta= --25°C
7
75°C
5
3
3
7 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
Collector Current, IC -- A
2
3
7 0.01
10
ms
DC
op
era
tio
0.1
C)
5°
=2
Tc
op
n(
Ta
=
s
0m
n(
tio
DC
3
2
10
a
er
5
25
°C
)
5
3
2
Tc=25°C
Single Pulse
For PNP minus sign is omitted.
0.01
5
5
7 1.0
2
3
5
7
10
5
7
2
0.1
3
5
7
2
1.0
3
ITR03982
PC -- Ta
1.2
Collector Dissipation, PC -- W
IC=1.5A
1.0
3
Collector Current, IC -- A
2SA1552 / 2SC4027
1m
s
ICP=2.5A
3
2
2
ITR03981
ASO
5
Collector Current, IC -- A
2SA1552 / 2SC4027
f=1MHz
7
0
2SC4
2
Cob -- VCB
100
2SA1552 / 2SC4027
VCE=10V
Output Capacitance, Cob -- pF
Gain-Bandwidth Product, f T -- MHz
5
2SA1552 / 2SC4027
1.0
0.8
No
0.6
he
at
sin
k
0.4
0.2
0
2
3
5
Collector-to-Emitter Voltage, VCE --
7 100
2
V ITR03983
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT10480
No.2262-4/5
2SA1552 / 2SC4027
PC -- Tc
16
2SA1552 / 2SC4027
15
Collector Dissipation, PC -- W
14
12
10
8
6
4
2
0
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT10479
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of September, 2008. Specifications and information herein are subject
to change without notice.
PS No.2262-5/5