ECH8657 Ordering number : ENA1710A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8657 General-Purpose Switching Device Applications Features • • 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 35 Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID 4.5 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 30 A Allowable Power Dissipation PD When mounted on ceramic substrate (1200mm2×0.8mm) 1unit 1.3 W Total Dissipation When mounted on ceramic substrate (1200mm2×0.8mm) Channel Temperature PT Tch Storage Temperature Tstg 1.5 W 150 °C --55 to +150 °C Package Dimensions Product & Package Information unit : mm (typ) 7011A-001 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel Top View Packing Type : TL 0.25 2.9 V Marking 0.15 8 TC 5 4 1 0.65 0.9 0.25 2.3 TL Bot t om View Lot No. Electrical Connection 0.3 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 0.07 2.8 0 t o 0.02 8 7 6 5 1 2 3 4 SANYO : ECH8 http://semicon.sanyo.com/en/network D2210 TKIM/42810PE TKIM TC-00002338 No. A1710-1/4 ECH8657 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Ratings Conditions min typ Unit max V(BR)DSS IDSS ID=1mA, VGS=0V VDS=35V, VGS=0V IGSS VGS(off) | yfs | VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=2A 1.66 RDS(on)1 ID=2A, VGS=10V 45 59 mΩ RDS(on)2 ID=1A, VGS=4.5V 85 119 mΩ RDS(on)3 ID=1A, VGS=4V 110 155 mΩ Input Capacitance Ciss 230 pF Output Capacitance Coss VDS=20V, f=1MHz VDS=20V, f=1MHz 37 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 25 pF Turn-ON Delay Time td(on) See specified Test Circuit. 6 ns Rise Time tr See specified Test Circuit. 11 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 17 ns Fall Time tf Qg See specified Test Circuit. 9 ns VDS=20V, VGS=10V, ID=4.5A 4.6 nC VDS=20V, VGS=10V, ID=4.5A VDS=20V, VGS=10V, ID=4.5A IS=4.5A, VGS=0V 1.0 nC Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Total Gate Charge Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD 35 V 1.2 1 μA ±10 μA 2.6 1.0 0.85 V S nC 1.2 V Switching Time Test Circuit 10V 0V VDD=20V VIN ID=2A RL=10Ω VIN D PW=10μs D.C.≤1% VOUT G ECH8657 50Ω V V 1.0 1 VGS=3.0V 0.5 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 2 1.0 IT14210 0 C 1.5 3 0 1 2 --25° 3.5V 25° C 2.0 4 5°C Drain Current, ID -- A 2.5 0 VDS=10V 5 3.0 0 ID -- VGS 6 4.0 4.5 15.0V 3.5 10.0V 6.0V ID -- VDS 4.0 Drain Current, ID -- A S Ta= 7 P.G 4 5 Gate-to-Source Voltage, VGS -- V 3 IT14211 No. A1710-2/4 ECH8657 RDS(on) -- VGS 240 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 2A 160 120 80 40 0 2 4 6 8 10 12 14 Gate-to-Source Voltage, VGS -- V 40 --40 --20 0 20 40 60 80 100 120 140 160 IT14213 IS -- VSD 7 5 VGS=0V 3 2 = Ta C 5° --2 °C 75 5 °C 25 3 3 2 0.1 7 5 2 3 0.1 0.01 0.01 0.2 --25° C 7 25°C 1.0 1.0 7 5 5°C 2 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S =2A V, I D 10.0 V GS= Ambient Temperature, Ta -- °C 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 0.8 1.0 1.2 IT14215 Ciss, Coss, Crss -- VDS 5 f=1MHz 3 3 td(off) 2 10 tf 7 5 td(on) tr 3 Ciss 2 100 7 5 Coss Crss 3 2 2 1.0 0.1 2 3 5 7 2 1.0 3 5 Drain Current, ID -- A 7 10 10 7 5 3 2 Drain Current, ID -- A 8 7 6 5 4 3 2 1 0 1 2 3 Total Gate Charge, Qg -- nC 5 4 5 IT14218 10 15 20 25 30 Drain-to-Source Voltage, VDS -- V VDS=10V ID=4.5A 9 0 IT14216 VGS -- Qg 10 0 0.6 Diode Forward Voltage, VSD -- V VDD=15V VGS=10V 5 0.4 IT14214 SW Time -- ID 7 Switching Time, SW Time -- ns 80 0 --60 16 VDS=10V Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V A I =1 4.0V, D = VGS 1A , I D= 4.5V = VGS 120 IT16223 | yfs | -- ID 5 160 Ta= 7 0 Ciss, Coss, Crss -- pF Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=1A 200 RDS(on) -- Ta 200 Ta=25°C 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 IT14217 ASO IDP=30A (PW≤10μs) 10 0μ 1m s s 10 ms 10 0m s ID=4.5A DC op era tio n( Operation in this Ta area is limited by RDS(on). =2 5°C ) Ta=25°C Single pulse When mounted on ceramic substrate (1200mm2×0.8mm) 1unit 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Drain-to-Source Voltage, VDS -- V 3 5 7 IT15504 No. A1710-3/4 ECH8657 PD -- Ta Allowable Power Dissipation, PD -- W 1.8 When mounted on ceramic substrate (1200mm2×0.8mm) 1.6 1.5 1.4 1.3 1.2 To t 1.0 al 0.8 Di ss 1u nit 0.6 ip ati on 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT15505 Note on usage : Since the ECH8657 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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