2N2222ADCSM DUAL HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm (inches) FEATURES 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 PACKAGE Underside View PAD 1 – Collector 1 PAD 2 – Base 1 PAD 3 – Base 2 PAD 4 – Collector 2 PAD 5 – Emitter 2 PAD 6 – Emitter 1 • DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTORS 4.32 ± 0.13 (0.170 ± 0.005) 3 2 2.54 ± 0.13 (0.10 ± 0.005) 1.40 ± 0.15 (0.055 ± 0.006) 1.65 ± 0.13 (0.065 ± 0.005) 0.64 ± 0.06 (0.025 ± 0.003) 2.29 ± 0.20 (0.09 ± 0.008) • HERMETIC CERAMIC SURFACE MOUNT PACKAGE • CECC SCREENING OPTIONS • SPACE QUALITY LEVELS OPTIONS • HIGH SPEED SATURATED SWITCHING APPLICATIONS: Hermetically sealed dual surface mount version of the popular 2N2222A for high reliability / space applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS PER SIDE (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD RθJA RθJC TSTG,Tj Semelab plc. PER SIDE Collector – Base Voltage Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IB = 0) Collector Current Total Device Dissipation Derate above 50°C TOTAL DEVICE Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case Storage Temperature,Operating Temp Range Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 75V 40V 6V 600mA 350mW 2.0mW / °C 130°C/W 60°C/W –55 to 200°C DOC 7168 Issue 1 2N2222ADCSM ELECTRICAL CHARACTERISTICS PER SIDE (TC = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit VCEO(sus)* Collector – Emitter Sustaining Voltage IC = 10mA 40 V V(BR)CBO* Collector – Base Breakdown Voltage IC = 10μA 75 V V(BR)EBO* Emitter – Base Breakdown Voltage IE = 10μA IC = 0 6 V ICEX* Collector Cut-off Current (IC = 0) IB = 0 VCE = 60V 10 nA ICBO* Collector – Base Cut-off Current IE = 0 VCB = 60V 10 nA 10 μA IEBO* Emitter Cut-off Current (IC = 0) IC = 0 VEB = 3V (off) 10 nA IBL* Base Current VCE = 60V VEB = 3V (off) 20 nA VCE(sat)* Collector – Emitter Saturation Voltage IC = 150mA IB = 15mA 0.3 IC = 500mA IB = 50mA 1 VBE(sat)* Base – Emitter Saturation Voltage IC = 150mA IB = 15mA IC = 500mA IC = 50mA IC = 0.1mA VCE = 10V 35 IC = 1mA VCE = 10V 50 IC = 10mA VCE = 10V 75 TA = –55°C IC = 10mA VCE = 10V 35 IC = 150mA VCE = 10V 100 IC = 150mA VCE = 1V 50 IC = 500mA VCE = 10V 40 hFE* TC = 125°C DC Current Gain 0.6 1.2 2 V V — 300 * Pulse test tp = 300μs , δ ≤ 2% DYNAMIC CHARACTERISTICS PER SIDE (TC = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit fT Transition Frequency IC = 20mA VCE = 20V f = 100MHz Cob Output Capacitance VCB = 10V IE = 0 f = 1.0MHz 8 pF Cib Input Capacitance VBE = 0.5V IC = 0 f = 1.0MHz 30 pF hfe Small Signal Current Gain IC = 1mA VCE = 10V f = 1kHz 50 300 IC = 10mA VCE = 10V f = 1kHz 75 375 300 MHz SWITCHING CHARACTERISTICS PER SIDE (RESISTIVE LOAD) (TC = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit td Delay Time VCC = 30V VBE = 0.5V (off) 10 ns tr Rise Time IC1 = 150mA IB1 = 15mA 25 ns ts Storage Time VCC = 30V IC = 150mA 225 ns tf Fall Time 60 ns IB1 = IB2 = 15mA fT is defined as the frequency at which hFE extrapolates to unity. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk DOC 7168 Issue 1