STA25A60 SemiWell Semiconductor Bi-Directional Triode Thyristor Symbol ○ 2.T2 Features ▼▲ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 25 A ) ◆ High Commutation dv/dt ◆ Isolated Type ◆ ○ 1.T1 3.Gate ○ TO-3PF General Description This device is suitable for AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. 1 Absolute Maximum Ratings Symbol ( TJ = 25°C unless otherwise specified ) Parameter Condition Ratings Units 600 V 25.0 A 2258250 A I2 t 260 A2 s Peak Gate Power Dissipation 5.0 W Average Gate Power Dissipation 0.5 W IGM Peak Gate Current 2.0 A VGM Peak Gate Voltage 10 V Operating Junction Temperature - 40 ~ 125 °C Storage Temperature - 40 ~ 150 °C VDRM Repetitive Peak Off-State Voltage IT(RMS) R.M.S On-State Current TC =85 °C ITSM Surge On-State Current One Cycle, 50Hz/60Hz, Peak, Non-Repetitive I2 t PGM PG(AV) TJ TSTG Apr, 2006. Rev. 0 1/5 copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. STA25A60 Electrical Characteristics Symbol Conditions Ratings Min. Typ. Max. Unit IDRM Repetitive Peak Off-State Current VD = VDRM, Single Phase, Half Wave TJ = 125 °C ─ ─ 2.0 mA VTM Peak On-State Voltage IT = 35 A, Inst. Measurement ─ ─ 1.4 V ─ ─ 30 ─ ─ 30 I+GT1 Ⅰ I -GT1 Ⅱ I -GT3 Ⅲ ─ ─ 30 V+GT1 Ⅰ ─ ─ 1.5 V-GT1 Ⅱ ─ ─ 1.5 V-GT3 Ⅲ ─ ─ 1.5 0.2 ─ ─ V 6 ─ ─ V/㎲ 35 mA 1.3 °C/W VGD (dv/dt)c IH Rth(j-c) 2/2 Items Gate Trigger Current Gate Trigger Voltage VD = 6 V, RL=10 Ω VD = 6 V, RL=10 Ω Non-Trigger Gate Voltage TJ = 125 °C, VD = 1/2 VDRM Critical Rate of Rise Off-State Voltage at Commutation TJ = 125 °C, [di/dt]c = -4.0 A/ms, VD=2/3 VDRM ─ Holding Current Thermal Impedance Junction to case ─ ─ mA V