AO3460 60V N-Channel MOSFET General Description The AO3460 uses advanced trench technology to provide excellent RDS(ON) , low gate charge, and operation with gate voltages as low as 4.5V, in the small SOT-23 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. It is ESD protected. Features VDS (V) = 60V ID = 0.65A (VGS = 10V) RDS(ON) < 1.7Ω (VGS = 10V) RDS(ON) < 2Ω (VGS = 4.5V) ESD protected D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum VDS Drain-Source Voltage 60 VGS Gate-Source Voltage Continuous Drain Current A, F Pulsed Drain Current TA=70°C TA=25°C Power Dissipation A TA=70°C 0.65 ID 0.5 IDM 1.6 Maximum Junction-to-Lead C 1/4 W 0.9 -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 1.4 PD Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A V ±20 TA=25°C B Units V RθJA RθJL Typ 70 100 63 °C Max 90 125 80 Units °C/W °C/W °C/W www.freescale.net.cn AO3460 60V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V Typ 60 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current Gate Threshold Voltage VDS=VGS ID=250uA ID(ON) On state drain current VGS=10V, VDS=5V 1 TJ=55°C 5 VDS=0V, VGS=±20V ±10 1 2.2 1.4 1.7 2.5 3 VGS=4.5V, ID=0.5A 1.6 2 VDS=5V, ID=0.65A 0.8 Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=0.1A,VGS=0V 0.8 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance 22 VGS=0V, VDS=30V, f=1MHz SWITCHING PARAMETERS tD(on) Turn-On DelayTime µA V Ω Ω S 1 V 1.2 A 27 pF 6 pF 2 pF 5.3 ns 2.8 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=0.65A, dI/dt=100A/µs, VGS=-9V 11.3 Qrr Body Diode Reverse Recovery Charge IF=0.65A, dI/dt=100A/µs, VGS=-9V 7.5 Body Diode Reverse Recovery Time VGS=10V, VDS=30V, RL=75Ω, RGEN=3Ω µA A RDS(ON) Coss 2.5 1.6 VGS=10V, ID=0.65A Units V VDS=60V, VGS=0V IDSS Max 19.7 ns 5.5 ns 14 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. Rev 2: Nov. 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/4 www.freescale.net.cn AO3460 60V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1 2 0.8 4.5V VDS=0V, VGS=±10V 4V 1 0.6 ID(A) ID (A) 1.5 VDS=5V 10V 6V 25°C 0.4 VDS=VGS ID=250µA 3.5V 0.5 0.2 125°C VGS=3.0V 0 0 0 1 2 3 4 0 5 1 2 3 4 3 Normalized On-Resistance 2.2 2.5 VGS=4.5V 2 1.5 VGS=10V 1 VGS=10V ID=0.65A 1.8 VGS=4.5V ID=0.5 1.4 1.0 0.6 0 0.5 1 1.5 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 50 100 150 1.0E+00 ID=0.65A 125°C 3.5 25°C 1.0E-01 -40°C IS (A) 3 RDS(ON) (Ω ) 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 4 2.5 1.0E-02 125°C 1.0E-03 2 25°C 1.0E-04 1.5 1.0E-05 1 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/4 5 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Figure 1: On-Region Characteristics RDS(ON) (Ω ) -40°C 0.0 0.4 0.8 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AO3460 60V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10 VDS=30V ID=0.65A Ciss 25 6 VDS=0V, VGS=±10V 4 VDS=VGS ID=250µA Capacitance (pF) VGS (Volts) 8 20 15 10 2 Coss 5 0 Crss 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 Qg (nC) Figure 7: Gate-Charge Characteristics 30 40 50 60 20 10µs 100µs 1ms 10ms RDS(ON) limited 0.100 0.1s 1s 10s DC 0.010 1 VDS (Volts) 10 100 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=125°C/W 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 8 0 0.0001 0.001 0.1 12 4 TJ(Max)=150°C TC=25°C 0.01 TJ(Max)=150°C TA=25°C 16 Power (W) 1.000 ID (Amps) 20 VDS (Volts) Figure 8: Capacitance Characteristics 10.000 Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4/4 www.freescale.net.cn