AO4427 30V P-Channel MOSFET General Description The AO4427 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected Features VDS (V) = -30V ID = -12.5 A (VGS = -20V) RDS(ON) < 12mΩ (VGS = -20V) . RDS(ON) < 14mΩ (VGS = -10V) ESD Rating: 2KV HBM SOIC-8 D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain AF Current TA=70°C TA=25°C Power Dissipation Junction and Storage Temperature Range Maximum Junction-to-Lead 1/4 C ±25 V ID -10.5 IDM -60 W 2.1 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 3 PD TA=70°C Thermal Characteristics Parameter AF Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Units V -12.5 Pulsed Drain Current B A Maximum -30 RθJA RθJL Typ 28 54 21 °C Max 40 75 30 Units °C/W °C/W °C/W www.freescale.net.cn AO4427 30V P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 IGSS Gate-Body leakage current VDS=0V, VGS=±25V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.7 ID(ON) On state drain current VGS=-10V, VDS=-5V -60 TJ=55°C -5 VGS=-20V, ID=-12.5A 11.5 14 VGS=-4.5V, ID=-5A 32 24 IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge A VGS=-10V, ID=-10A VDS=-5V, ID=-12.5A Output Capacitance V 12 Diode Forward Voltage Crss µA -3 15 Forward Transconductance VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-12.5A S V -4.2 A 2900 pF pF 320 448 pF 6.8 10 Ω 41 52 nC 10 nC Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=-12.5A, dI/dt=100A/µs 28 Qrr Body Diode Reverse Recovery Charge IF=-12.5A, dI/dt=100A/µs 20 VGS=-10V, VDS=-15V, RL=1.2Ω, RGEN=3Ω mΩ -1 480 3.4 mΩ mΩ 2330 VGS=0V, VDS=-15V, f=1MHz µA ±10 9.4 VSD Coss -2.5 12.2 TJ=125°C gFS Units -1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max V VDS=-30V, VGS=0V IDSS RDS(ON) Typ 12 nC 12.8 ns 10.3 ns 49.5 ns 29 ns 35 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Rev8: Nov. 2010 2/4 www.freescale.net.cn AO4427 30V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 30 -6V -10V VDS=-5V -5V 20 20 15 -ID(A) -ID (A) -4.5V 125°C 10 10 VGS=-4V 5 0 0 0 1 2 3 4 -VDS (Volts) Figure 1: On-Region Characteristics 5 12 1 1.5 2 2.5 3 3.5 4 4.5 -VGS(Volts) Figure 2: Transfer Characteristics 5 Normalized On-Resistance 1.6 11 RDS(ON) (mΩ ) 25°C VGS=-10V ID=-10A 1.4 VGS=-10V VGS=-10V, VDS=-15V, 10 ID=-12.5A 1.2 9 VGS=-20V 8 VGS=-20V ID=-12.5A 1 0.8 0 5 10 15 20 25 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 50 1.0E+01 ID=-12.5A 1.0E+00 40 -IS (A) RDS(ON) (mΩ ) 1.0E-01 125°C 30 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 1.0E-02 COMPONENTS IN LIFE SUPPORT DEVICES 125°COR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF 1.0E-03 THE RIGHT TO IMPROVE PRODUCT DESIGN, 20 SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1.0E-04 25°C 10 25°C 1.0E-05 0 1.0E-06 4 5 6 7 8 9 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/4 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AO4427 30V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 10 VDS=-15V ID=-12.5A Capacitance (pF) -VGS (Volts) Ciss 2500 8 6 4 2 2000 1500 Coss 1000 Crss 500 0 0 0 5 10 15 20 25 30 35 40 -Qg (nC) Figure 7: Gate-Charge Characteristics 45 0 100.0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 40 RDS(ON) limited 100µs TJ(Max)=150°C TA=25°C 10µs 30 -ID (Amps) V 10ms GS=-10V, VDS=-15V, 0.1s 1.0 1s DC 0 0.001 1 10 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 20 10 0.1 10 ID=-12.5A 10s TJ(Max)=150°C TA=25°C 0.1 Power (W) 1ms 10.0 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, PD FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0.1 Ton T Single Pulse 0.01 0.00001 4/4 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 100 1000 www.freescale.net.cn