AO4496 30V N-Channel MOSFET General Description The AO4496 uses advanced trench technology to provide excellent R DS(ON) with low gate charge. This device is suitable for use as a DC-DC converter application. Features VDS (V) = 30V ID = 10A (VGS = 10V) RDS(ON) < 19.5mΩ (VGS = 10V) RDS(ON) < 26mΩ (VGS = 4.5V) D G S Absolute Maximum Ratings TJ=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current A Pulsed Drain Current TA=70°C Avalanche Current G Repetitive avalanche energy L=0.1mH TA=25°C Power Dissipation A TA=70°C G Junction and Storage Temperature Range Maximum Junction-to-Lead 1/5 C Units V ±20 V 10 B Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A 30 Maximum ID 7.5 IDM 50 IAR 17 EAR 14 mJ 3.1 PD W 2.0 TJ, TSTG Symbol t ≤ 10s Steady State Steady State A RθJA RθJL -55 to 150 Typ 31 59 16 Max 40 75 24 °C Units °C/W °C/W °C/W www.freescale.net.cn AO4496 30V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID = 250µA, VGS = 0V 1 TJ = 55°C 5 IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V Gate Threshold Voltage VDS = VGS ID = 250µA 1.4 ID(ON) On state drain current VGS = 10V, VDS = 5V 50 ±100 VGS = 10V, ID = 10A TJ=125°C 30 Diode Forward Voltage IS = 1A,VGS = 0V Maximum Body-Diode Continuous Current 0.76 DYNAMIC PARAMETERS Ciss Input Capacitance Rg Gate resistance 550 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg (10V) Total Gate Charge Qg (4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) VGS=10V, VDS=15V, ID=10A 3 µA nA V A 29 IS Output Capacitance 19.5 26 VSD Reverse Transfer Capacitance 16 24 VDS = 5V, ID = 10A Crss 2.5 21 Forward Transconductance Coss 1.8 VGS = 4.5V, ID = 7.5A gFS Units V VDS = 30V, VGS = 0V Static Drain-Source On-Resistance Max 30 VGS(th) RDS(ON) Typ mΩ S 1 V 3 A 715 pF 110 pF 55 pF 4 4.9 Ω 9.8 13 nC 4.6 6.1 nC 1.8 nC Gate Drain Charge 2.2 nC Turn-On DelayTime 5 ns VGS=10V, VDS=15V, RL= 1.5Ω, RGEN=3Ω 3.2 ns 24 ns IF=10A, dI/dt=500A/µs 22 Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs 14 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Time 6 ns 29 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA = 25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using t ≤ 300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. 0 G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C. Rev5: Nov. 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/5 www.freescale.net.cn AO4496 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 50 10V VDS= 5V 4.5V 4V 40 40 30 ID(A) ID (A) 30 3.5V 20 20 125°C VGS= 3V 10 10 25°C 0 0 0 1 2 3 4 1 5 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Figure 1: On-Region Characteristics 26 Normalized On On-Resistance 1.8 24 RDS(ON) (mΩ Ω) 2 VGS= 4.5V 22 20 18 VGS= 10V 16 14 0 5 10 15 VGS= 10V ID= 10A 1.6 1.4 VGS= 4.5V ID= 7.5A 1.2 1.0 0.8 IF=-6.5A, dI/dt=100A/µs 20 25 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 50 ID= 10A 45 1E+01 1E+00 35 1E-01 125°C 30 IS (A) RDS(ON) (mΩ Ω) 40 25 1E-02 125°C 1E-03 25°C 20 1E-04 25°C 15 1E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/5 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AO4496 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 10 VDS= 15V ID= 10A Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 600 400 200 Coss Crss 0 0 0 2 4 6 8 0 10 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 1000 TJ(Max)=150°C TA=25°C 10µs ID (Amps) 1 1ms RDS(ON) limited 10ms 100mss 10s 0.1 0.01 IF=-6.5A, dI/dt=100A/µs 1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 10 1 100 10 DC TJ(Max)=150°C TA=25°C 0.1 Power (W) 100µs 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W 100 1 0.0001 0.01 1 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING PD OUT OF SUCH 0.01APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT SingleNOTICE. Pulse T 0.001 0.00001 4/5 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) 100 1000 www.freescale.net.cn AO4496 30V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig 5/5 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.freescale.net.cn