AO4724 30V N-Channel MOSFET General Description SRFET TM The AO4724 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Features VDS (V) = 30V ID = 10.5A (VGS = 10V) RDS(ON) < 17.5mΩ (VGS = 10V) RDS(ON) < 29 mΩ (VGS = 4.5V) SOIC-8 D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage VDS Gate-Source Voltage VGS TA=70°C ID B Avalanche Current B 8.5 6.2 B Junction and Storage Temperature Range Thermal Characteristics Parameter AF t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Maximum Junction-to-Lead C 3.1 1.7 2.0 1.1 IAR Repetitive avalanche energy 0.3mH 1/4 7.7 Steady-State A 80 PD TA=70°C Units V V 10.5 IDM TA=25°C Power Dissipation Maximum 10 Sec Steady State 30 ±20 TA=25°C Continuous Drain Current AF Pulsed Drain Current Symbol EAR TJ, TSTG Symbol RθJA RθJL Typ 31 59 16 W 13 A 25 mJ -55 to 150 °C Max 40 75 24 Units °C/W °C/W °C/W www.freescale.net.cn AO4724 30V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V V 20 Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.3 ID(ON) On state drain current VGS=10V, VDS=5V 80 VGS=10V, ID=10.5A TJ=125°C VGS=4.5V, ID=8A 100 nA 2 V 14.4 17.5 21.5 25.8 22.7 29.0 mΩ 0.5 V 4.8 A A Forward Transconductance VDS=5V, ID=10.5A 23 VSD Diode Forward Voltage IS=1A,VGS=0V 0.4 IS Maximum Body-Diode + Schottky Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance mΩ S 696 VGS=0V, VDS=15V, f=1MHz mA 1.64 gFS Coss Units 0.1 TJ=55°C Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IGSS RDS(ON) Typ 900 pF 199 pF 81 pF 1.2 1.8 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 12.4 16 nC Qg(4.5V) Total Gate Charge 6.1 8 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time Qrr VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=10.5A 2.04 nC 2.7 nC 2.6 ns VGS=10V, VDS=15V, RL=1.43Ω, RGEN=3Ω 6.8 ns 17 ns IF=10.5A, dI/dt=300A/µs 20.2 Body Diode Reverse Recovery Charge IF=10.5A, dI/dt=300A/µs 7.9 3.6 ns 26 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Rev2: Nov. 2010 2/4 www.freescale.net.cn AO4724 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 80 10V VDS=5V 5V 24 8V 60 6V 18 ID(A) ID (A) 4.5V 40 12 4V 3.5V 20 125°C 6 VGS=3V 25°C 0 0 0 1 2 3 4 5 0 1 VDS (Volts) Fig 1: On-Region Characteristics Normalized On-Resistance RDS(ON) (mΩ ) 800 140 80 ID=10.5A 0.5 1.8 VGS=4.5V 22 18 14 VGS=10V 10 4 5 1.6 220 140 VGS=10V 15 7 1.4 VGS=4.5V 1.2 1 0.8 0 6 12 18 24 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 1.0E+01 ID=10.5A 46 1.0E+00 125°C 1.0E-01 125°C IS (A) 38 30 25 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 54 RDS(ON) (mΩ ) 3 VGS(Volts) Figure 2: Transfer Characteristics 30 26 2 1.0E-02 25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER 1.0E-03MARKET. APPLICATIONS OR USES AS CRITICAL 22 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 1.0E-04THE RIGHT TO IMPROVE PRODUCT DESIGN, OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES 14 25°C FUNCTIONS AND RELIABILITY WITHOUT NOTICE 1.0E-05 6 0.0 0.2 0.4 0.6 0.8 1.0 2 4 6 8 10 VSD (Volts) VGS (Volts) Figure 6: Body-Diode Characteristics Figure 5: On-Resistance vs. Gate-Source Voltage 3/4 www.freescale.net.cn AO4724 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 VDS=15V ID=10.5A 1000 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 800 600 400 Coss 200 0 Crss 0 0 3 6 9 12 15 0 5 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 800 140 80 0.5 50 RDS(ON) limited Power (W) ID (Amps) 10.0 100µs 0.1s 1.0 TJ(Max)=150°C TA=25°C 1s 1ms 30 220 140 TJ(Max)=150°C TA=25°C 40 10µs 10ms 10 15 7 30 20 10 10s DC 0 0.001 0.1 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS 0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES PD NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Single Pulse 0.01 0.00001 0.0001 0.001 Ton 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4/4 www.freescale.net.cn