SHENZHENFREESCALE AO4800

Freescale
AO48 00/ MC48 00
Dual N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
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PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
58 @ VGS = 4.5V
30
82 @ VGS = 2.5V
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOIC-8 saves board space
Fast switching speed
High performance trench technology
ID (A)
5.0
4.2
1
8
2
7
3
6
4
5
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Units
Drain-Source Voltage
30
VDS
V
Gate-Source Voltage
VGS
± 12
o
TA=25 C
a
Continuous Drain Current
o
TA=70 C
b
Pulsed Drain Current
a
Continuous Source Current (Diode Conduction)
ID
TA=25 C
a
o
TA=70 C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
± 30
IS
1.7
PD
Steady State
2.1
1.3
TJ, Tstg -55 to 150
Symbol
t <= 10 sec
4.1
IDM
o
Power Dissipation
5.0
RθJA
Maximum
62.5
80
A
A
W
o
C
Units
o
C/W
C/W
o
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
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AO48 00/ MC48 00
SPECIFICATIONS (T A = 25oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
VGS(th)
IGSS
VDS = VGS, ID = 250 uA
Min
Limits
Unit
Typ Max
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
A
IDSS
ID(on)
A
Drain-Source On-Resistance
A
Forward Tranconductance
Diode Forward Voltage
rDS(on)
0.7
VDS = 0 V, VGS = ± 12 V
±100
nA
VDS = 24 V, VGS = 0 V
1
25
uA
o
VDS = 24 V, VGS = 0 V, TJ = 55 C
VDS = 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 5 A
VGS = 2.5 V, ID =4.2 A
gfs
VSD
VDS = 15 V, ID = 5 A
IS = 1.7 A, VGS = 0 V
20
A
58
82
22
0.7
mΩ
S
V
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS = 15 V, VGS = 4.5 V,
ID = 5 A
VDS = 15 V, VGS = 0 V, f = 1MHz
VDD = 15 V, RL = 15 Ω , ID = 1 A,
VGEN = 4.5 V
6.3
0.9
1.9
257
62
30
22
40
50
20
nC
pF
nS
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.
FREESCALE reserves the right to make changes without fu rther notice to any products herein. FREESCALE makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assumeany liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in freescale data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the freescale product could create a situ ation where personal injury or death may occur.
Should Buyer purchase or use freescale products for any s uch unintended or unauthorized application, Buyer s hall indemnify and hold freescale and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that freescale was negligent regarding the design or manufacture of the part. freescale is an Equal Opportunity/Affirmative Action Employer.
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Freescale
AO48 00/ MC48 00
Typical Electrical Characteristics (N-Channel)
10
T A = -55oC
20
25oC
8
ID - Drain Current (A)
ID - Drain Current (A)
4.5V
15
2.5V
10
5
125oC
6
4
2
0
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
0
0.5
VDS - Drain-to-Source Voltage (V)
1
1.5
2
2.5
3
V GS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2400
2000
C - Capacitance (pF)
rDS(ON) - Normalized On-Resistance
1.4
1.2
4.5V
1
1600
CISS
1200
800
400
10V
C OSS
0
5
10
15
20
0
25
5
10
15
20
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
r DS(ON) - On-Resistance (Normalized)
10
8
Vgs Voltage ( V )
C RSS
0
0.8
6
4
2
1.6
VGS = 4.5V
1.4
1.2
1
0.8
0.6
0
0
10
20
30
40
50
60
-50
-25
0
25
50
75
100
125
TJ - Junction Temperature (oC)
Gate charge ( nC )
Gate Charge
On-Resistance vs. Junction Temperature
3
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150
Freescale
AO48 00/ MC48 00
Typical Electrical Characteristics (N-Channel)
100
0.07
rDS(ON) - On-Resistance (OHM)
IS - Source CURRENT (A
10
TA = 125oC
1
o
25 C
0.1
0.01
0.001
0.06
0.05
0.04
0.03
0.02
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
0.01
1.4
2
VSD - Source-to-DrainVoltage (V)
2.5
3
3.5
4
4.5
5
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs.Gate-to Source Voltage
30
1.8
ID = 250µA
20
Power (W)
1.4
1.2
1
0.8
10
0.6
0.4
0.2
0
0
-50
-25
0
25
50
75
100
125
0.01
150
0.1
1
TJ - Temperature (oC)
1
10
Time (sec)
Threshold Voltage
Single Pulse Power
D =0.5
RθJA (t) = r(t) * RθJA
0.2
0.1
Impedance
Normalized Effective Transient Thermal
VGS(th) - Variance (V)
1.6
RθJA = 125 °C/W
0.1
0.05
P(pk
0.02
t1
0.01
t2
0.01
SINGLE PULSE
0.001
0.0001
TJ - TA = P *
RθJA (t)
Duty Cycle, D = t1
/t
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
4
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100
Freescale
AO48 00/ MC48 00
Package Information
SO-8: 8LEAD
H x 45°
5
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