SHENZHENFREESCALE AO6808

AO6808
Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO6808/L uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable for use as a load switch. It is ESD protected.
AO6808 and AO6808L are electrically identical.
-RoHS Compliant
-AO6808L is Halogen Free
Features
VDS = 20V
ID = 6A
(VGS = 4.5V)
RDS(ON) = 19mΩ (typical) (VGS = 4.5V)
RDS(ON) = 20mΩ (typical) (VGS = 4.0V)
RDS(ON) = 21mΩ (typical) (VGS = 3.1V)
RDS(ON) = 23mΩ (typical) (VGS = 2.5V)
D2
D1
TSOP6
Top View
G1
S1
D1/D2
S2
1 6
2 5
3 4
G2
G1
D1/D2
G2
S2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
10 Sec
Steady State
VDS
Drain-Source Voltage
20
VGS
Gate-Source Voltage
±12
Continuous Drain
Current A
Pulsed Drain Current
Power Dissipation A
TA=25°C
ID
IDM
TA=70°C
B
TA=25°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead C
1/4
TJ, TSTG
Symbol
A
A
t ≤ 10s
Steady State
Steady State
4.6
3.7
V
A
60
PD
TA=70°C
6
4.6
Units
V
RθJA
RθJL
1.3
0.8
0.8
0.5
-55 to 150
Typ
76
118
54
Max
95
150
68
W
°C
Units
°C/W
°C/W
°C/W
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AO6808
Dual N-Channel Enhancement Mode Field
Effect Transistor
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID = 250µA, VGS = 0V
TJ = 55°C
5
±10
µA
1
V
15
19
23
21
27
33
VGS = 4.0V, ID = 5.5A
15
20
25
mΩ
VGS = 3.1V, ID = 5A
16
21
27
mΩ
VGS = 2.5V, ID = 2A
17
23
30
mΩ
1
V
1.3
A
780
pF
VDS = 0V, VGS = ±10V
VDS = VGS ID = 250µA
0.5
ID(ON)
On state drain current
VGS = 4.5V, VDS = 5V
60
VGS = 4.5V, ID = 6.0A
TJ=125°C
gFS
Forward Transconductance
VSD
IS = 1A,VGS = 0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
VDS = 5V, ID = 6.0A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge
Qg (4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
tD(on)
tr
Turn-On Rise Time
µA
0.75
Gate-Body leakage current
Gate Threshold Voltage
IS
Units
V
1
VGS(th)
Static Drain-Source On-Resistance
Max
20
VDS = 20V, VGS = 0V
IGSS
RDS(ON)
Typ
A
34
0.65
620
VGS=0V, VDS=10V, f=1MHz
VGS= 10V, VDS= 10V, ID= 6A
mΩ
S
125
pF
64
pF
16.2
21
nC
7.7
10
nC
1.5
nC
Gate Drain Charge
2.7
nC
Turn-On DelayTime
236
ns
448
9.5
ns
µs
4.1
µs
VGS=10V, VDS=10V, RL=1.7Ω,
RGEN=3Ω
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=6A, dI/dt=100A/µs
25
Qrr
Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs
9
33
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. in
any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using < 300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
Rev0 April 2008
2/4
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AO6808
Dual N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
60
4.5V
VDS= 5V
3V
50
30
2.5V
30
ID(A)
ID (A)
40
2V
20
20
10
VGS=1.5V
10
125°C
0
0
0
1
2
3
4
5
0.5
1
26
2
2.5
3
1.6
25
Normalized On-Resistance
VGS= 2.5V
24
RDS(ON) (mΩ)
1.5
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Figure 1: On-Region Characteristics
23
VGS= 3.1V
22
VGS= 4.0V
21
20
VGS= 4.5V
19
0
4
8
VGS= 4.5V
ID= 6A
1.4
1.2
1.0
0.8
IF=-6.5A,16
dI/dt=100A/µs
12
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1E+02
55
ID= 6.0A
1E+01
1E+00
45
125°C
1E-01
IS (A)
RDS(ON) (mΩ)
25°C
35
1E-02
25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER
1E-03 MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES125°C
OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
1E-04
OUT OF25SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
25°C
15
1
2
3
4
5
6
7
8
1E-05
1E-06
9
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
3/4
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
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1.2
AO6808
Dual N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
10
VDS= 10V
ID= 6A
800
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
600
400
2
200
0
0
Coss
Crss
0
3
6
9
12
15
18
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
15
20
VDS (Volts)
Figure 8: Capacitance Characteristics
1000
100
RDS(ON)
limited
10µs
100µs
1
1ms
10ms
100ms
0.1
TJ(Max)=150°C
TA=25°C
DC
0.01
0.1
1
0.1
0.00001
IF=-6.5A, dI/dt=100A/µs
10
ZθJA Normalized Transient
Thermal Resistance
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=150°C/W
10
1
10s
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
TJ(Max)=150°C
TA=25°C
100
Power (W)
10
ID (Amps)
5
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
PD
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH
0.01 APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Ton
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
4/4
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