SHENZHENFREESCALE AOD4128

AOD4128
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AOD4128 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.
This device is ideally suited for use as a low side switch in CPU core power conversion. The device can also be used
in PWM, load switching and general purpose applications.
Features
VDS (V) = 25V
ID = 60 A
(VGS = 10V)
RDS(ON) < 4 mΩ (VGS = 10V)
RDS(ON) < 7 mΩ (VGS = 4.5V)
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Units
V
±20
V
VGS
TC=25°C
Continuous Drain
G
Current
60
TC=100°C
Pulsed Drain Current C
Avalanche Current
C
Repetitive avalanche energy L=0.3mH
TC=25°C
Power Dissipation
B
Power Dissipation
A
C
TC=100°C
TA=25°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case
B
ID
47
IDM
165
IAR
45
EAR
304
PD
mJ
W
37
TJ, TSTG
Symbol
t ≤ 10s
Steady State
Steady State
A
75
2.0
PDSM
TA=70°C
Junction and Storage Temperature Range
1/6
Maximum
25
RθJA
RθJC
W
1.3
-55 to 175
Typ
18
50
1
Max
25
60
2
°C
Units
°C/W
°C/W
°C/W
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Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250uA, VGS=0V
25
V
VDS=25V, VGS=0V
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
1
TJ=55°C
5
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
1.3
ID(ON)
On state drain current
VGS=10V, VDS=5V
165
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
5.8
gFS
Forward Transconductance
VDS=5V, ID=20A
55
VSD
Diode Forward Voltage
IS=1A, VGS=0V
0.7
IS
Maximum Body-Diode Continuous CurrentG
VGS=10V, ID=20A
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=12.5V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
VGS=10V, VDS=12.5V, ID=20A
5.0
nA
2.5
V
4
6
7
mΩ
mΩ
S
1
V
60
A
3578
4300
pF
731
950
pF
438
615
pF
2.5
4
Ω
61.8
80
nC
29.8
39
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
IF=20A, dI/dt=100A/µs
39
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
32
VGS=10V, VDS=12.5V,
RL=0.63Ω, RGEN=3Ω
100
A
3.4
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
1.6
uA
8.5
nC
12.9
nC
11.6
ns
17.7
ns
45
ns
20
ns
48
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Re1: Sep. 2008
2/6
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
165
60
150
VDS=5V
4.5V
10V
50
135
120
5V
40
4V
90
ID(A)
ID(A)
105
75
125°C
30
3.5V
60
20
45
VGS=3V
30
25°C
10
-40°C
15
0
0
0
1
2
3
4
VDS (Volts)
Figure 1: On-Region Characteristics
5
0
8.0
Normalized On-Resistance
RDS(ON) (mΩ )
2
3
VGS(Volts)
Figure 2: Transfer Characteristics
VGS=4.5V
6.0
5.0
4.0
VGS=10V
3.0
2.0
ID=20A
VGS=10V
1.6
1.4
VGS=4.5V
1.2
1
0.8
0
5
10
15
20
25
30
-50
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
12
1.0E+02
ID=20A
10
1.0E+01
125°C
1.0E+00
IS (A)
8
TC=100°C
125°C
1.0E-01
25°C
1.0E-02
TA25°C
=25°C
6
1.0E-03
-40°C
-55 to 175
4
1.0E-04
-40°C
2
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
3/6
4
1.8
7.0
RDS(ON) (mΩ )
1
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5000
10
Ciss
4000
Capacitance (pF)
VGS (Volts)
4500
VDS=12.5V
ID=20A
8
6
4
2
3500
3000
2500
2000
Coss
1500
1000
500
0
0
10
20
30
40
50
60
Qg (nC)
Figure 7: Gate-Charge Characteristics
70
0
1000
100
5
10
15
20
VDS (Volts)
Figure 8: Capacitance Characteristics
25
500
RDS(ON)
limited
10us
100us
10
1ms
DC
10ms
1
TJ(Max)=175°C
TC=25°C
0.1
0.01
TJ(Max)=175°C
TC=25°C
400
Power (W)
ID (Amps)
Crss
0
300
200
100
0.1
1
10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
0
1E-05 1E-04 0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, single pulse
PD
0.1
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
150
Power Dissipation (W)
ID(A), Peak Avalanche Current
200
TA=25°C
100
50
80
60
40
20
0
0
0.00001
0.0001
0
0.001
500
80
400
Power (W)
Current rating ID(A)
100
60
40
20
50
75
100
125
150
175
300
200
100
0
0
25
50
75
100
125
150
175
0
1E-05 1E-04 0.001 0.01
TCASE (°C)
Figure 14: Current De-rating (Note B)
10
Zθ JA Normalized Transient
Thermal Resistance
25
TCASE (°C)
Figure 13: Power De-rating (Note B)
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
1
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
PD
0.001
0.0001
0.00001
Single Pulse
0.0001
0.001
Ton
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
5/6
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Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
6/6
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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