AOD4184/AOI4184 40V N-Channel MOSFET General Description The AOD4184/AOI4184 used advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, those devices are well suited for high current load applications. Features VDS ID (at VGS=10V) 40V 50A RDS(ON) (at VGS=10V) < 8mΩ RDS(ON) (at VGS = 4.5V) < 11mΩ D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current C 6.5 A 5 Avalanche Current C IAS, IAR 35 A Avalanche energy L=0.1mH C EAS, EAR 61 mJ TC=25°C Power Dissipation B TC=100°C Junction and Storage Temperature Range 2.3 Steady-State Steady-State RθJA RθJC W 1.5 TJ, TSTG Symbol t ≤ 10s W 25 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case 50 PD TA=25°C Power Dissipation A 1/6 A 120 IDSM TA=70°C V 40 IDM TA=25°C Continuous Drain Current Units V 50 ID TC=100°C Pulsed Drain Current Maximum 40 ±20 -55 to 175 Typ 18 44 2.4 °C Max 22 55 3 Units °C/W °C/W °C/W www.freescale.net.cn AOD4184/AOI4184 40V N-Channel MOSFET Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V VDS=40V, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) ID(ON) Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.7 VGS=10V, VDS=5V 120 TJ=55°C 5 VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=15A gFS Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current IS VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=20V, ID=20A Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 40 IDSS RDS(ON) Typ µA 100 nA 2.2 2.6 V 6.7 8 11 13 8.5 11 A 37 0.72 mΩ mΩ S 1 V 20 A 120 1500 1800 pF 150 215 280 pF 80 135 190 pF 2 3.5 5 Ω 21 27.2 33 nC 10 13.6 16 nC VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω 4.5 nC 6.4 nC 6.4 ns 17.2 ns 29.6 ns 16.8 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 20 29 38 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 18 26 34 ns nC A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. 2/6 www.freescale.net.cn AOD4184/AOI4184 40V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 100 10V 5V VDS=5V 100 80 4V 60 ID(A) ID (A) 80 60 3.5V 40 125°C 40 25°C 20 20 VGS=3V 0 0 0 1 2 3 4 2 5 10 RDS(ON) (mΩ) Normalized On-Resistance VGS=4.5V 8 7 VGS=10V 6 3.5 4 4.5 2 VGS=10V ID=20A 1.8 1.6 17 5 2 VGS=4.5V10 1.4 1.2 1 ID=15A 0.8 0.6 5 0 5 -50 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) -25 0 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 25 ID=20A 1.0E+01 40 20 125°C 1.0E+00 IS (A) RDS(ON) (mΩ) 3 2.2 9 15 125°C 10 1.0E-01 25°C 1.0E-02 1.0E-03 1.0E-04 25°C 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/6 2.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 1.2 www.freescale.net.cn AOD4184/AOI4184 40V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2500 VDS=20V ID=20A 2000 Capacitance (pF) VGS (Volts) 8 6 4 2 1000 Coss Crss 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 30 0 10 20 30 VDS (Volts) Figure 8: Capacitance Characteristics 40 1000 1000.0 10µs 100.0 10.0 100µs 1ms 10ms DC 1.0 0.1 800 TJ(Max)=175°C TC=25°C 0.0 0.01 0.1 1 17 5 2 10 600 400 200 1 VDS (Volts) 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 TJ(Max)=175°C TC=25°C 10µs RDS(ON) limited Power (W) ID (Amps) 1500 500 0 ZθJC Normalized Transient Thermal Resistance Ciss D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJ 0 1E-05 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=3°C/W 0.1 PD Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 T 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AOD4184/AOI4184 40V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 Power Dissipation (W) IAR (A) Peak Avalanche Current 60 TA=25°C TA=100°C TA=125°C TA=150°C 50 40 30 20 10 0 10 0.000001 0 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 100 150 175 1000 60 TA=25°C 50 40 Power (W) Current rating ID(A) 125 TCASE (°C) Figure 13: Power De-rating (Note F) 30 20 100 17 5 2 10 10 10 1 0.001 0 0 25 50 75 100 125 150 175 ZθJA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=55°C/W 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 5/6 www.freescale.net.cn AOD4184/AOI4184 40V N-Channel MOSFET Gate Charge Test Circuit & W aveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgs Qgd - Vgs Ig Charge Resistive Switching Test Circuit & W aveforms RL Vds Vds Vgs 90% + Vdd DUT VDC Rg - 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & W aveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs VDC Rg - I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig 6/6 Vgs L Isd + Vdd VDC - IF t rr dI/dt I RM Vdd Vds www.freescale.net.cn