AOD4185/AOI4185 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD4185/AOI4185 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current applications. Features VDS (V) = -40V ID = -40A (VGS = -10V) RDS(ON) < 15mΩ (VGS = -10V) RDS(ON) < 20mΩ (VGS = -4.5V) D G S Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS VGS Gate-Source Voltage TC=25°C Continuous Drain Current B,H C Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B C A TA=70°C 1/6 D,F IDM -115 IAR -42 mJ 88 31 W 2.5 1.6 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State A 62.5 PDSM Junction and Storage Temperature Range Maximum Junction-to-Case V -31 PD TC=100°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G A,G Maximum Junction-to-Ambient ±20 ID EAR TA=25°C Power Dissipation Units V -40 TC=100°C Pulsed Drain Current Maximum -40 RθJA RθJC Typ 15 41 2 °C Max 20 50 2.4 Units °C/W °C/W °C/W www.freescale.net.cn AOD4185/AOI4185 P-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -40 -1 TJ=55°C -5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=-250µA -1.7 ID(ON) On state drain current VGS=-10V, VDS=-5V -115 ±100 VGS=-10V, ID=-20A Static Drain-Source On-Resistance TJ=125°C 50 Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Gate resistance VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg (-10V) Total Gate Charge Qg (-4.5V) Total Gate Charge Qgs Gate Source Charge VGS=-10V, VDS=-20V, ID=-20A 2.5 µA nA V mΩ S -0.72 DYNAMIC PARAMETERS Ciss Input Capacitance Units A 20 IS Rg 15 23 VSD Reverse Transfer Capacitance 12.5 16 VDS=-5V, ID=-20A Output Capacitance -3 19 Forward Transconductance Crss -1.9 VGS=-4.5V, ID=-15A gFS Coss Max V VDS=-40V, VGS=0V VGS(th) RDS(ON) Typ -1 V -20 A 2550 pF 280 pF 190 pF 4 6 Ω 42 55 nC 18.6 7 nC Qgd Gate Drain Charge 8.6 nC tD(on) Turn-On DelayTime 9.4 ns tr Turn-On Rise Time 20 ns tD(off) Turn-Off DelayTime 55 ns tf trr Body Diode Reverse Recovery Time IF=-20A, dI/dt=100A/µs 38 Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs 47 VGS=-10V, VDS=-20V, RL=1Ω, RGEN=3Ω Turn-Off Fall Time 30 ns 49 ns nC A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using steady state junction-to-ambient thermal resistance. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a TBD maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. TBD G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. H. The maximum current rating is limited by bond-wires. *This device is guaranteed green after data code 8X11 (Sep 1ST 2008). Rev4: April, 2012 2/6 www.freescale.net.cn AOD4185/AOI4185 P-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 120 VDS=-5V -6.0V -10V 100 -4.5V 80 80 -ID(A) -ID (A) 60 -4.0V 60 40 40 ` 125°C VGS=-3.5V 20 20 25° 0 0 0 1 2 3 4 1.5 5 -VDS (Volts) Figure 1: On-Region Characteristics 22 1.8 RDS(ON) (mΩ Ω) Normalized On-Resistance 2 VGS=-4.5V 18 16 14 VGS=-10V 12 10 3.5 4 4.5 5 VGS=-10V ID=-20A 1.6 1.4 VGS=-4.5V ID=-15A 1.2 1 0.8 10 20 30 40 50 60 -50 -25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 100 45 150 ID=-20A 40 10 35 1 30 0.1 25 -IS (A) RDS(ON) (mΩ Ω) 3 0.6 0 125°C mJ 125°C 0.01 25°C 20 0.001 25°C 15 0.0001 10 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/6 2.5 -VGS(Volts) Figure 2: Transfer Characteristics 24 20 2 0.00001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AOD4185/AOI4185 P-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3500 10 VDS=-20V ID=-20A 3000 Ciss Capacitance (pF) -VGS (Volts) 8 6 4 2500 2000 1500 1000 Crss 2 Coss 500 0 0 0 5 10 15 20 25 30 35 40 Qg (nC) Figure 7: Gate-Charge Characteristics 0 45 5 10 15 20 25 30 35 40 -VDS (Volts) Figure 8: Capacitance Characteristics 10000 1000 TJ(Max)=175° C 10µs RDS(ON) limited 100µs 10 1ms 10ms 1 Power (W) -ID (Amps) 100 1000 100 DC TJ(Max)=175°C TC=25°C 0.1 0.1 10 1 10 100 0.00001 -VDS (Volts) 10 Zθ Jc Normalized Transient Thermal Resistance 0.001 0.01 0.1 1 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) D=Ton/T TJ,PK=Tc+PDM.ZθJC.RθJC RθJC=2.4°C/W 0.0001 150 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse mJ 1 PD 0.1 Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AOD4185/AOI4185 P-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 70 40 -Current rating ID (A) Power Dissipation (W) 60 50 40 30 20 30 20 10 10 0 0 0 25 50 75 100 125 150 175 0 25 TCASE (° °C) Figure 12: Power De-rating (Note B) 50 75 100 125 150 175 TCASE (° °C) Figure 13: Current De-rating (Note B) 10000 TJ(Max)=150° C Power (W) 1000 100 10 1 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G) Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 150 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note G) 5/6 www.freescale.net.cn AOD4185/AOI4185 P-Channel Enhancement Mode Field Effect Transistor Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgs Vds Qgd + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton td(on) Vgs - DUT Vgs td(off) tr tf 90% Vdd VDC + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L EAR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 6/6 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.freescale.net.cn