SHENZHENFREESCALE AOK60N30

AOK60N30
300V,60A N-Channel MOSFET
General Description
The AOK60N30 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply
designs.
Features
VDS
ID (at VGS=10V)
350@150℃
60A
RDS(ON) (at VGS=10V)
< 0.056Ω
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
1/5
VGS
TC=25°C
TC=100°C
ID
AOK60N30
300
Units
V
±30
V
60
40
A
Pulsed Drain Current C
IDM
Avalanche Current C
IAR
9.5
A
Repetitive avalanche energy C
EAR
1353
mJ
Single plused avalanche energy G
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Maximum Junction-to-Case
EAS
dv/dt
2707
5
658
mJ
V/ns
W
5.3
-55 to 150
W/ oC
°C
300
°C
AOK60N30
40
0.5
0.19
Units
°C/W
°C/W
°C/W
PD
TJ, TSTG
TL
Symbol
RθJA
RθCS
RθJC
200
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AOK60N30
300V,60A N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
300
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Zero Gate Voltage Drain Current
IDSS
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V, TJ=150°C
350
V
ID=250µA, VGS=0V
0.26
V/ oC
VDS=300V, VGS=0V
1
VDS=240V, TJ=125°C
10
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V, ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=30A
gFS
Forward Transconductance
VDS=40V, ID=30A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
ISM
3.5
4.1
nΑ
V
0.042
0.056
Ω
52
V
Maximum Body-Diode Continuous Current
60
A
Maximum Body-Diode Pulsed Current
200
A
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
3550
4438
5330
pF
VGS=0V, VDS=25V, f=1MHz
410
593
770
pF
22
38
54
pF
VGS=0V, VDS=0V, f=1MHz
0.8
1.7
2.6
Ω
70
88
106
nC
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
0.68
S
1
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
±100
2.9
µA
VGS=10V, VDS=240V, ID=60A
21
nC
28
nC
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=60A,dI/dt=100A/µs,VDS=100V
250
320
390
Qrr
Body Diode Reverse Recovery Charge IF=60A,dI/dt=100A/µs,VDS=100V
11
14.5
18
Body Diode Reverse Recovery Time
VGS=10V, VDS=150V, ID=60A,
RG=25Ω
88
ns
222
ns
224
ns
132
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=9.5A, VDD=150V, RG=25Ω, Starting TJ=25°C
2/5
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AOK60N30
300V,60A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
140
VDS=40V
10V
-55°C
7V
120
100
100
60
ID(A)
ID (A)
6.5V
80
6V
125°C
10
25°C
40
1
5.5V
20
VGS=5V
0
0.1
0
5
10
15
20
25
30
2
4
6
8
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
3
Normalized On-Resistance
0.10
0.08
VGS=10V
RDS(ON) (Ω
Ω)
10
0.06
0.04
0.02
0.00
2.5
2
VGS=10V
ID=30A
1.5
1
0.5
0
0
20
40
60
80
100
120
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
-100
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.2
-50
0
1.0E+02
40
1.0E+00
IS (A)
BVDSS (Normalized)
1.0E+01
1.1
1
125°C
1.0E-01
25°C
1.0E-02
0.9
1.0E-03
0.8
1.0E-04
-100
3/5
-50
0
50
100
150
200
TJ (°C)
Figure 5:Break Down vs. Junction Temparature
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AOK60N30
300V,60A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10000
Ciss
VDS=240V
ID=60A
Capacitance (pF)
VGS (Volts)
12
9
6
Coss
1000
Crss
100
3
0
10
0
30
60
90
120
150
0.1
Current rating ID(A)
Qg (nC)
Figure 7: Gate-Charge Characteristics
75
1000
60
100
ID (Amps)
45
30
15
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100
10µs
RDS(ON)
limited
100µs
1ms
10
10ms
100ms
DC
1
0.1
0
1
TJ(Max)=150°C
TC=25°C
0.01
0
25
50
75
100
125
TCASE (°C)
Figure 9: Current De-rating (Note B)
150
1
10
100
1000
VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOK60N30 (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.19°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
Single Pulse
T
0.001
1E-06
4/5
1E-05
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOK60N30 (Note F)
1
10
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AOK60N30
300V,60A N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
5/5
L
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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