AOL1208 30V N-Channel MOSFET General Description The AOL1208 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode. Features VDS 30V 50A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 11mΩ RDS(ON) (at VGS = 4.5V) < 15mΩ D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Case 1/6 IAS, IAR 27 A EAS, EAR 36 mJ 50 Steady-State Steady-State W 25 2.5 RθJA RθJC W 1.6 TJ, TSTG Symbol t ≤ 10s A 9 PDSM TA=70°C A 11 PD TC=100°C V 120 IDSM TA=70°C ±20 36 IDM TA=25°C Continuous Drain Current Units V 50 ID TC=100°C Maximum 30 -55 to 175 Typ 24 40 2.4 °C Max 30 50 3 Units °C/W °C/W °C/W www.freescale.net.cn AOL1208 30V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V VDS=30V, VGS=0V IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.3 ID(ON) On state drain current VGS=10V, VDS=5V 120 TJ=55°C 5 VDS=0V, VGS= ±20V 100 VGS=10V, ID=20A 16 VGS=4.5V, ID=15A 12 15 VDS=5V, ID=20A 49 TJ=125°C Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A µA nA V A 13 gFS Crss 2.4 11 Static Drain-Source On-Resistance Output Capacitance 1.8 9 RDS(ON) Units V 1 Zero Gate Voltage Drain Current Coss Max 30 IDSS IS Typ 0.7 mΩ mΩ S 1 V 40 A 680 850 1110 pF 260 380 540 pF 18 30 51 pF 0.7 1.4 2.1 Ω 12 16 20 nC 5 7 8.0 nC 2 2.5 4 nC 1.5 3.5 3.6 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 9 12 15 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 18 23 28 6 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω ns 3 ns 19.5 ns 4 ns ns nC A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. 2/6 www.freescale.net.cn AOL1208 30V N-Channel MOSFET Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 80 10V 6V 80 5V VDS=5V 4.5V 7V 60 4V ID(A) ID (A) 60 3.5V 40 125°C VGS=3V 20 40 20 0 25°C 0 0 1 2 3 4 5 1 1.5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 3 3.5 4 4.5 5 1.8 Normalized On-Resistance VGS=4.5V 12 RDS(ON) (mΩ) 2.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 14 10 8 VGS=10V 6 4 0 5 10 15 20 25 VGS=10V ID=20A 1.6 1.4 17 VGS=4.5V 5 ID=15A 1.2 2 10 1 0.8 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 25 1.0E+02 ID=20A 1.0E+01 40 20 1.0E+00 125°C 1.0E-01 125°C 15 IS (A) RDS(ON) (mΩ) 2 25°C 1.0E-02 1.0E-03 10 1.0E-04 25°C 1.0E-05 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AOL1208 30V N-Channel MOSFET Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 10 VDS=15V ID=20A 1200 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 1000 800 600 400 200 0 2 4 6 8 10 12 14 16 Qg (nC) Figure 7: Gate-Charge Characteristics 0 18 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 200 1000.0 100.0 RDS(ON) limited 10.0 160 10µs 100us 1ms DC 1.0 Power (W) ID (Amps) Crss 0 0 0.0 0.01 0.1 1 VDS (Volts) 1 10 0 0.0001 100 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3°C/W PD 0.1 0.01 0.00001 80 40 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 TJ(Max)=150°C TC=25°C 120 TJ(Max)=150°C TC=25°C 0.1 ZθJC Normalized Transient Thermal Resistance Coss Ton Single Pulse 0.0001 0.001 0.01 T 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AOL1208 30V N-Channel MOSFET Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100.0 Power Dissipation (W) IAR (A) Peak Avalanche Current 50 TA=100°C TA=25°C TA=125°C TA=150°C 40 30 20 10 0 10.0 0.000001 0 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note F) TA=25°C 40 1000 Power (W) Current rating ID(A) 50 10000 50 30 20 17 5 2 10 100 10 10 0 0 25 50 75 100 125 150 1 0.00001 175 TCASE (°C) Figure 14: Current De-rating (Note F) 10 ZθJA Normalized Transient Thermal Resistance 25 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 0.001 0.1 10 0 18 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=50°C/W 0.1 PD 0.01 0.001 0.00001 Ton Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 5/6 www.freescale.net.cn AOL1208 30V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgs Qgd - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC Rg - 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs VDC Rg - I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig 6/6 Vgs L Isd + Vdd VDC - IF t rr dI/dt I RM Vdd Vds www.freescale.net.cn