AOL1432A N-Channel SDMOSTM POWER Transistor General Description TM The AOL1432A is fabricated with SDMOS trench technology that combines excellent RDS(ON) with low gate charge. The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. Features VDS (V) = 25V (V GS = 10V) ID = 44A RDS(ON) < 7.5mΩ (VGS = 10V) RDS(ON) <14mΩ (VGS = 4.5V) UltraSO-8TM Top View D D Bottom tab connected to drain S G S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain A Current TC=25°C ID IDM C IDSM IAR Repetitive avalanche energy L=50μH C EAR TA=70°C TC=25°C TA=70°C 35 A W 15 2.1 W 1.3 TJ, TSTG t ≤ 10s Steady-State Steady-State mJ 31 30 -55 to 175 Symbol A A 10 PDSM Junction and Storage Temperature Range 1/7 31 PD TA=25°C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case B V 12 Avalanche Current C Power Dissipation A ±20 120 TA=25°C TC=100°C Units V 44 TC=100°C Power Dissipation B Maximum 25 RθJA RθJC Typ 14.2 48 3.5 °C Max 20 60 5 Units °C/W °C/W °C/W www.freescale.net.cn AOL1432A N-Channel SDMOSTM POWER Transistor Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250uA, VGS=0V 50 Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 120 VGS=10V, ID=30A TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VSD IS=1A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current IS VDS=5V, ID=30A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=0V, VDS=12.5V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=12.5V, ID=30A Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=30A, dI/dt=500A/μs μA 100 nA 2 3 V 6 7.5 8.6 12 11.5 14 mΩ 1 V 44 A A 50 mΩ S 0.7 990 1180 1450 pF 210 275 350 pF 125 175 245 pF 1.1 1.7 2.5 Ω 18 21.7 26 nC 9 11 13 nC 3 4 5 nC 4.5 6.4 9 nC VGS=10V, VDS=12.5V, RL=0.42Ω, RGEN=3Ω IF=30A, dI/dt=500A/μs Units V 10 TJ=55°C Static Drain-Source On-Resistance Max 25 VDS=25V, VGS=0V IGSS RDS(ON) Typ 6.8 ns 13.8 ns 21.5 ns 8.7 ns 8.4 10.6 13 16 13 20 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev0 : July 2008 2/7 www.freescale.net.cn AOL1432A N-Channel SDMOSTM POWER Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V 5V 6V 80 VDS=5V 80 4.5V 7V 60 ID(A) ID (A) 60 4V 40 40 VGS=3.5V 20 125°C 20 25°C 0 0 0 1 2 3 4 0 5 1 2 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 18 2 Normalized On-Resistance 16 RDS(ON) (mΩ) 14 VGS=4.5V 12 10 8 VGS=10V 6 4 2 1.8 VGS=10V, 30A 1.6 1.4 1.2 VGS=4.5V, 20A 17 5 2 10 1 0 0 5 0.8 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 0 200 Temperature (°C) 18 Figure 4: On-Resistance vs. Junction Temperature 30 1.0E+02 ID=30A 1.0E+01 25 40 1.0E+00 IS (A) RDS(ON) (mΩ) 20 125°C 15 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 10 25°C 1.0E-04 5 1.0E-05 0 0.0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/7 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AOL1432A N-Channel SDMOSTM POWER Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1800 1400 Capacitance (pF) VGS (Volts) 1600 VDS=12.5V ID=30A 8 6 4 Ciss 1200 1000 800 600 Coss 400 2 200 0 0 5 10 15 20 Qg (nC) Figure 7: Gate-Charge Characteristics 25 0 RDS(ON) limited 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 10.0 100μs 1ms 10ms DC 1.0 TJ(Max)=175°C TC=25°C 0.1 0.0 0.01 0.1 25 TJ(Max)=175°C TA=25°C 17 5 2 10 120 80 40 1 VDS (Volts) 10 100 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=5°C/W 0 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 160 10μs Power (W) 10μs 100.0 ID (Amps) 5 200 1000.0 ZθJC Normalized Transient Thermal Resistance Crss 0 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 1 PD 0.1 Ton 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/7 www.freescale.net.cn AOL1432A N-Channel SDMOSTM POWER Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 60 Power Dissipation (W) ID(A), Peak Avalanche Current 70 50 TA=25°C 40 TA=100°C 30 20 TA=125°C TA=150°C 10 30 20 10 0 0 0.000001 0.00001 0.0001 0 0.001 25 100 125 150 175 TA=25°C 40 1000 Power (W) Current rating ID(A) 75 10000 50 30 20 17 5 2 10 100 10 10 0 1 0 25 50 75 100 125 150 175 0 10 1 0 0 0.01 0.1 1 10 0100 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note B) ZθJA Normalized Transient Thermal Resistance 50 TCASE (°C) Figure 13: Power De-rating (Note B) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W 40 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 5/7 www.freescale.net.cn AOL1432A N-Channel SDMOSTM POWER Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 di/dt=800A/us 25 125ºC 3 16 12 di/dt=800A/us 14 10 2.5 125ºC 12 6 Qrr 10 125ºC trr (ns) 15 25ºC 2 0 15 20 25 1 S 25ºC 0.5 0 30 0 0 IB (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 25 1.5 125ºC 2 0 10 25ºC 8 4 5 5 trr 6 4 Irm 0 2 10 S 8 25ºC Irm (A) Qrr (nC) 20 5 10 15 20 25 30 IB (A) Figure 18: Diode Reverse Recovery Time and Soft Coefficient vs. Conduction Current 15 10 2.5 Is=20A 125ºC Qrr 5 0 200 400 600 4 25ºC 2 800 0 1000 di/dt (A/μs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt 6/7 9 125ºC Irm 0 6 trr (ns) 10 12 Irm (A) Qrr (nC) 25ºC 15 8 125ºC 2 1.5 25ºC trr 125º 6 3 1 0.5 25ºC S 0 0 200 S Is=20A 20 400 600 800 0 1000 di/dt (A/μs) Figure 20: Diode Reverse Recovery Time and Soft Coefficient vs. di/dt www.freescale.net.cn AOL1432A N-Channel SDMOSTM POWER Transistor Gate Charge Test Circuit & W aveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 7/7 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn