AOL1700 N-Channel Enhancement Mode Field Effect Transistor General Description SRFET TM AOL1700 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Features VDS (V) = 30V ID =85A (VGS = 10V) RDS(ON) < 4.2mΩ (VGS = 10V) RDS(ON) < 6.0mΩ (VGS = 4.5V) Ultra SO-8TM Top View D D Bottom tab connected to drain S G S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS TC=25°C Continuous Drain Current B H C ±20 V 81 IDM 200 A 17 IDSM TA=70°C A 13 Avalanche Current C IAR 30 A Repetitive avalanche energy L=0.3mH C EAR 135 mJ TC=25°C Power Dissipation B Power Dissipation A Junction and Storage Temperature Range Maximum Junction-to-Case D 2.1 W 1.3 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State W 50 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A 100 PD TC=100°C TA=25°C 1/6 Units V ID TA=25°C Continuous Drain Current A Maximum 30 85 TC=100°C Pulsed Drain Current SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode RθJA RθJC Typ 19.6 50 1 °C Max 25 60 1.5 Units °C/W °C/W °C/W www.freescale.net.cn AOL1700 N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Min Conditions ID=1mA, VGS=0V Typ 30 0.1 TJ=125°C 20 Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 200 VGS=10V, ID=20A 0.1 µA 2.2 V 3.4 4.2 5.2 6.5 6.0 A Static Drain-Source On-Resistance VGS=4.5V, ID=20A 4.8 gFS Forward Transconductance VDS=5V, ID=20A 90 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode + Schottky Diode Continuous Current H DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 0.36 3760 VGS=0V, VDS=15V, f=1MHz mΩ mΩ S 0.5 V 85 A 4512 pF 682 pF 314 VGS=0V, VDS=0V, f=1MHz mA 1.5 RDS(ON) TJ=125°C Units V VDS=30V, VGS=0V IGSS Coss Max pF 0.75 1.5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 62 74 nC Qg(4.5V) Total Gate Charge 29 35 nC VGS=10V, VDS=15V, ID=20A Qgs Gate Source Charge 12 nC Qgd Gate Drain Charge 12 nC tD(on) Turn-On DelayTime 9.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 8.5 ns 34 ns 9 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=300A/µs 18 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=300A/µs 22 27 ns nC A: The value of R θJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating I DSM are based on T J(MAX)=150°C, using steady-state junction-to-ambient thermal resistance. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. H. The maximum current rating is limited by bond-wires. * This device is guaranteed green after date code 8P11 (June 1 ST 2008) Rev3: Dec 2008 2/6 www.freescale.net.cn AOL1700 N-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 30 5V 10V VDS=5V 175 7V 6V 150 25 4.5V 4.0V 20 ID(A) ID (A) 125 100 3.5V 125° 15 75 25°C 10 50 VGS=3.0V 25 5 0 0 0 1 2 3 4 5 1 1.5 VDS (Volts) Figure 1: On-Region Characteristics 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 7 Normalized On-Resistance 2 6 RDS(ON) (mΩ ) 2 VGS=4.5V 5 4 3 VGS=10V 2 ID=20A 1.8 VGS=10V 1.6 VGS=4.5V 1.4 1.2 1 0.8 0 5 10 15 20 25 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 60 90 120 150 180 210 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 8 1.0E+02 ID=20A 1.0E+01 5 4 1.0E-01 25°C 1.0E-02 1.0E-03 3 25°C 1.0E-04 2 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/6 125°C 1.0E+00 125°C 6 IS (A) RDS(ON) (mΩ ) 7 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AOL1700 N-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6.00E-09 10 5.00E-09 VDS=15V ID=20A 6 Capacitance (nF) VGS (Volts) 8 4 2 3.00E-09 2.00E-09 Coss Crss 1.00E-09 0 0.00E+00 0 10 20 30 40 50 60 70 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 200 1000.0 10µs 10.0 DC 10ms 100ms 1.0 TJ(Max)=175°C TC=25°C 0.1 180 100µ 1ms RDS(ON) limited Power (W) 100.0 ID (Amps) Ciss 4.00E-09 TJ(Max)=175°C TC=25°C 160 140 120 100 0.0 80 0.01 0.1 1 VDS (Volts) 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJc.RθJc RθJC=1.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AOL1700 N-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS TC=25°C 100 80 Power Dissipation (W) ID(A), Peak Avalanche Current 120 TC=150°C 60 40 20 0 1.0E-07 1.0E-06 1.0E-05 1.0E-04 110 100 90 80 70 60 50 40 30 20 10 0 0 1.0E-03 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note B) Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 100 100 80 TJ(Max)=150°C TA=25°C 80 60 Power (W) Current rating ID(A) 25 40 20 60 40 20 0 0 0 25 50 75 100 125 150 175 0.001 TCASE (°C) Figure 14: Current De-rating (Note B) 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure15: Single Pulse Power Rating Junction-toAmbient (Note G) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) 5/6 www.freescale.net.cn AOL1700 N-Channel Enhancement Mode Field Effect Transistor Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 BVDSS AR Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig 6/6 Isd L + Vdd trr dI/dt IRM Vdd VDC - IF Vds www.freescale.net.cn