AON2408 20V N-Channel MOSFET General Description The AON2408 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. Features VDS 20V ID (at VGS=4.5V) 8A RDS(ON) (at VGS =4.5V) < 14.5mΩ RDS(ON) (at VGS =2.5V) < 19mΩ D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current G Pulsed Drain Current Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D 1/5 Steady-State A 2.8 W 1.8 RθJA °C -55 to 150 TJ, TSTG Symbol t ≤ 10s V 32 PD TA=70°C ±12 6 IDM TA=25°C A Units V 8 ID TA=100°C C Maximum 20 Typ 37 66 Max 45 80 Units °C/W °C/W www.freescale.net.cn AON2408 20V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±12V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 0.5 ID(ON) On state drain current VGS=4.5V, VDS=5V 32 TJ=55°C 5 ±100 nA 1.2 V 11.6 14.5 16.3 20.5 VGS=2.5V, ID=4A 15 19 mΩ 1 V 3.5 A Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=8A 50 VSD Diode Forward Voltage IS=1A,VGS=0V 0.65 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Crss Reverse Transfer Capacitance Rg Gate resistance µA 0.83 VGS=4.5V, ID=8A Output Capacitance Units V 1 Zero Gate Voltage Drain Current Coss Max 20 VDS=20V, VGS=0V IDSS RDS(ON) Typ mΩ S 782 pF VGS=0V, VDS=10V, f=1MHz 158 pF 98 pF VGS=0V, VDS=0V, f=1MHz 2.4 Ω 7 nC 1 nC SWITCHING PARAMETERS Qg Total Gate Charge VGS=4.5V, VDS=10V, ID=8A Qgs Gate Source Charge Qgd Gate Drain Charge 2.4 nC tD(on) Turn-On DelayTime 3 ns 4.5 ns 28 ns 6 ns ns nC tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=8A, dI/dt=100A/µs 11 Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs 2.7 VGS=4.5V, VDS=10V, RL=1.25Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. 2/5 www.freescale.net.cn AON2408 20V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 20 2.5V 4.5V VDS=5V 3.5V 15 1.8V ID(A) ID (A) 30 20 10 125°C 5 10 25°C VGS=1.5V 0 0 0 1 2 3 4 0 5 1 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 50 Normalized On-Resistance 1.6 40 RDS(ON) (mΩ Ω) 0.5 VGS=1.8V 30 20 VGS=2.5V 10 VGS=4.5V 1.4 VGS=2.5V ID=4A VGS=4.5V ID=8A 1.2 VGS=1.8V ID=2A 1 0.8 0 0 0 4 8 12 16 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+02 50 ID=8A 1.0E+01 RDS(ON) (mΩ Ω) IS (A) 40 30 1.0E+00 125°C 1.0E-01 125°C 1.0E-02 20 25°C 1.0E-03 10 25°C 0 1.0E-05 0 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/5 1.0E-04 2 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AON2408 20V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 1200 VDS=10V ID=8A 1000 4 Capacitance (pF) VGS (Volts) Ciss 3 2 800 600 400 Coss 1 0 0 0 2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 8 0 5 10 15 VDS (Volts) Figure 8: Capacitance Characteristics 20 10000 100.0 TA=25°C 10µs 100µs 1000 Power (W) 10µs RDS(ON) limited 10.0 ID (Amps) Crss 200 1ms 1.0 10ms TJ(Max)=150°C TC=25°C 0.1 100 DC 10 0.0 0.01 0.1 1 VDS (Volts) 10 1 100 0.00001 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=80°C/W 0.1 Single Pulse 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note H) 4/5 www.freescale.net.cn AON2408 20V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL V ds Vds DUT Vgs 90 % + Vdd VDC - Rg 1 0% Vgs V gs t d (o n ) tr t d (o ff) to n tf t o ff D io d e R eco very T est C ircu it & W a vefo rm s Q rr = - V ds + Idt DUT V gs V ds Isd V gs Ig 5/5 L Isd + VD C - IF t rr dI/dt I RM V dd V dd V ds www.freescale.net.cn