SHENZHENFREESCALE AON3806

AON3806
20V Dual N-Channel MOSFET
General Description
The AON3806 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and
operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected.
This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its commondrain
configuration.
Features
VDS
20V
ID (at VGS=4.5V)
6A
RDS(ON) (at VGS=4.5V)
< 22mΩ
RDS(ON) (at VGS =4.0V)
< 24mΩ
RDS(ON) (at VGS =2.5V)
< 33mΩ
D1
D2
Top View
S2
1
8
D2
G2
S1
G1
2
7
3
6
4
5
D2
D1
D1
G1
G2
S1
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current G
VGS
TA=25°C
Pulsed Drain Current C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
1/5
Steady-State
Steady-State
A
2.5
W
1.6
TJ, TSTG
Symbol
t ≤ 10s
V
24
PD
TA=70°C
±12
4.7
IDM
TA=25°C
Power Dissipation B
Units
V
6
ID
TA=70°C
Maximum
20
RθJA
RθJL
-55 to 150
Typ
40
75
30
°C
Max
50
95
40
Units
°C/W
°C/W
°C/W
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AON3806
20V Dual N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±10V
VGS(th)
Gate Threshold Voltage
VDS=VGS,ID=250µA
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
TJ=55°C
5
±10
µA
1.1
V
13.5
17.5
22
20.5
26
33
VGS=4.0V, ID=5A
14
18
24
VGS=2.5V, ID=4A
19
24
33
mΩ
mΩ
1
V
3.5
A
24
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=6A
25
Diode Forward Voltage
IS=1A,VGS=0V
0.65
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
µA
0.85
0.5
VSD
Coss
Units
V
1
VGS=4.5V, ID=6A
Static Drain-Source On-Resistance
Max
20
VDS=20V, VGS=0V
IDSS
RDS(ON)
Typ
S
500
pF
100
pF
52
pF
2.6
kΩ
6
VGS=4.5V, VDS=10V, ID=6A
mΩ
9
nC
2
nC
1
nC
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
18
us
trr
Body Diode Reverse Recovery Time
IF=6A, dI/dt=100A/µs
9
Qrr
Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs
10
ns
nC
VGS=5V, VDS=10V, RL=1.67Ω,
RGEN=3Ω
0.2
us
1.5
us
7.4
us
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
2/5
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AON3806
20V Dual N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
4.5V
2.5V
VDS=5V
4V
15
ID(A)
ID (A)
20
2V
10
125°C
10
25°C
5
VGS=1.5V
0
0
0
1
2
3
4
0
5
40
1
1.5
2
2.5
3
1.8
Normalized On-Resistance
35
VGS=2.5V
30
RDS(ON) (mΩ
Ω)
0.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
25
VGS=4.0V
20
15
VGS=4.5V
10
5
VGS=2.5V
ID=4A
1.6
1.4
17
VGS=4.5V
5
ID=6A
1.2
2
10
VGS=4.0V
ID=5A
1
0.8
0
0
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
60
1.0E+01
ID=6A
1.0E+00
50
40
125°C
40
IS (A)
RDS(ON) (mΩ
Ω)
1.0E-01
125°C
25°C
1.0E-03
20
1.0E-04
25°C
1.0E-05
10
0
4
6
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
3/5
1.0E-02
30
2
10
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON3806
20V Dual N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
800
5
VDS=10V
ID=6A
4
Ciss
Capacitance (pF)
VGS (Volts)
600
3
2
400
Coss
200
1
0
Crss
0
0
2
4
6
Qg (nC)
Figure 7: Gate-Charge Characteristics
8
0
5
10
15
VDS (Volts)
Figure 8: Capacitance Characteristics
20
10000
100.0
TA=25°C
10µs
RDS(ON)
limited
1000
100µs
1ms
10ms
1.0
TJ(Max)=150°C
TA=25°C
0.1
Power (W)
ID (Amps)
10.0
100
10
10s
DC
1
0.0
1E-05
0.01
0.1
1
VDS (Volts)
10
0.001
0.1
10
1000
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=95°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/5
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AON3806
20V Dual N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s
RL
V ds
Vds
DUT
Vgs
90 %
+
Vdd
VDC
-
Rg
1 0%
Vgs
V gs
t d (o n )
tr
t d (o ff)
to n
tf
t o ff
D iode R ecovery T est C ircuit & W aveform s
Q rr = -
V ds +
Idt
DUT
V gs
V ds -
Isd
V gs
Ig
5/5
L
Isd
+
VD C
-
IF
t rr
dI/dt
I RM
V dd
V dd
V ds
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