AON4803 20V Dual P-Channel MOSFET General Description The AON4803 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) . This device is ideal for load switch and battery protection applications. Product Summary VDS -20V -3.4A ID (at VGS=-4.5V) RDS(ON) (at VGS=-4.5V) < 90mΩ RDS(ON) (at VGS =-2.5V) < 120mΩ RDS(ON) (at VGS =-1.8V) < 165mΩ D2 D1 Top View S1 1 8 D1 G1 2 7 D1 S2 G2 3 6 4 5 D2 D2 G2 G1 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 1/5 Steady-State Steady-State V A 1.7 W 1.1 TJ, TSTG Symbol t ≤ 10s ±8 -15 PD TA=70°C Units V -2.7 IDM TA=25°C Maximum -20 -3.4 ID TA=70°C S2 RθJA RθJL -55 to 150 Typ 51 88 28 °C Max 75 110 35 Units °C/W °C/W °C/W www.freescale.net.cn AON4803 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=-250µA, VGS=0V -20 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.4 ID(ON) On state drain current VGS=-10V, VDS=-5V -15 TJ=55°C nA V 65 90 90 125 VGS=-2.5V, ID=-2.5A 80 120 mΩ VGS=-1.8V, ID=-1.5A 100 165 mΩ 12 TJ=125°C VDS=-5V, ID=-3.4A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge Qgd Gate Drain Charge A -0.7 560 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-10V, ID=-3.4A S V -2 A 745 pF 80 pF pF 15 23 Ω 6.1 8 nC 0.6 nC 1.6 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-3.4A, dI/dt=100A/µs Qrr Body Diode Reverse Recovery Charge IF=-3.4A, dI/dt=100A/µs 7.5 VGS=-4.5V, VDS=-10V, RL=2.9Ω, RGEN=3Ω mΩ -1 70 SWITCHING PARAMETERS Qg Total Gate Charge Qgs µA -1 Forward Transconductance Crss -5 ±100 gFS Coss Units -0.65 VGS=-4.5V, ID=-3.4A Static Drain-Source On-Resistance Max V VDS=-20V, VGS=0V IDSS RDS(ON) Typ 10 ns 12 ns 44 ns 22 ns 21 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. 2/5 www.freescale.net.cn AON4803 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 20 -4.5V VDS=-5V -3.0V 20 15 -2.5V -ID(A) -ID (A) 15 10 10 125°C -2.0V 25°C 5 5 VGS=-1.5V 0 0 0 1 2 3 4 0 5 90 Normalized On-Resistance RDS(ON) (mΩ Ω) 2 3 4 1.4 80 70 VGS=-2.5V 60 50 VGS=-4.5V 40 VGS=-1.8V ID=-1.5A 1.2 VGS=-2.5V ID=-2.5A 1 VGS=-4.5V ID=-3.4A 17 5 2 10 100 150 0.8 0 2 0 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 125 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 180 1.0E+02 ID=-3.4A 1.0E+01 40 140 1.0E+00 100 125°C -IS (A) RDS(ON) (mΩ Ω) 1 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 60 25°C 1.0E-04 1.0E-05 20 0 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/5 2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AON4803 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 5 VDS=-10V ID=-3.4A 1200 1000 Capacitance (pF) -VGS (Volts) 4 3 2 800 Ciss 600 400 Coss 1 200 0 Crss 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 10 0 5 10 15 -VDS (Volts) Figure 8: Capacitance Characteristics 20 10000 100.0 TA=25°C 10µs RDS(ON) limited 1000 Power (W) -ID (Amps) 10.0 100µs 1.0 1ms 10ms 100 10 0.1 10s DC TJ(Max)=150°C TA=25°C 1 0.0 0.00001 0.01 0.1 1 -VDS (Volts) 10 0.001 0.1 10 1000 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=110°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/5 www.freescale.net.cn AON4803 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 5/5 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.freescale.net.cn