SHENZHENFREESCALE AON6204

AON6204
30V N-Channel MOSFET
General Description
The AON6204 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high
frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON)
and Crss .In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode.
Features
VDS
30V
ID (at VGS=10V)
24A
RDS(ON) (at VGS=10V)
< 12mΩ
RDS(ON) (at VGS = 4.5V)
< 18mΩ
D
Top View
1
8
2
7
3
6
4
5
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current G
VGS
TC=25°C
Pulsed Drain Current C
Continuous Drain
Current
TA=25°C
V
A
110
14
IDSM
A
11
Avalanche Current C
IAS, IAR
21
A
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
22
mJ
Power Dissipation B
Junction and Storage Temperature Range
1.9
Steady-State
Steady-State
RθJA
RθJC
W
1.2
TJ, TSTG
Symbol
t ≤ 10s
W
13
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
31
PD
TC=100°C
TA=25°C
Power Dissipation A
1/6
±20
19
IDM
TA=70°C
Units
V
24
ID
TC=100°C
Maximum
30
-55 to 150
Typ
29
56
3.3
°C
Max
35
67
4
Units
°C/W
°C/W
°C/W
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AON6204
30V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.4
ID(ON)
On state drain current
VGS=10V, VDS=5V
110
TJ=55°C
5
VGS=10V, ID=20A
TJ=125°C
VGS=4.5V, ID=15A
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Units
V
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
30
VDS=30V, VGS=0V
IDSS
RDS(ON)
Typ
µA
100
nA
1.9
2.4
V
10
12
14.5
18
14.5
18
mΩ
1
V
30
A
A
33
0.72
mΩ
S
400
510
670
pF
VGS=0V, VDS=15V, f=1MHz
150
220
310
pF
13
22
38
pF
VGS=0V, VDS=0V, f=1MHz
0.8
1.6
2.4
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
6
8
10
nC
Qg(4.5V) Total Gate Charge
2.6
3.5
4.0
nC
1.6
2
2.4
nC
0.8
1.4
2
nC
VGS=10V, VDS=15V, ID=20A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
8
11
14
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
13
17
21
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
4.3
ns
8
ns
15.8
ns
3.4
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
2/6
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AON6204
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
60
10V
VDS=5V
80
7V
50
6V
5V
40
ID (A)
ID(A)
4.5V
60
4V
30
40
20
3.5V
20
VGS=3V
10
0
125°C
25°C
0
0
1
2
3
4
5
0
1
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
3
4
5
6
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
20
Normalized On-Resistance
1.8
18
VGS=4.5V
16
RDS(ON) (mΩ )
2
14
12
VGS=10V
10
VGS=10V
ID=20A
1.6
1.4
17
VGS=4.5V
5
ID=15A
1.2
2
10
1
8
0
5
10
15
20
25
0.8
30
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
75
100
125
150
175
1.0E+02
1.0E+01
35
ID=20A
40
30
1.0E+00
25
1.0E-01
125°C
125°C
IS (A)
RDS(ON) (mΩ )
50
0
Temperature (°C)
18
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
40
20
25°C
1.0E-02
1.0E-03
15
10
1.0E-04
25°C
1.0E-05
5
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
3/6
25
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON6204
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
800
10
VDS=15V
ID=20A
Ciss
600
Capacitance (pF)
VGS (Volts)
8
6
4
400
Coss
200
2
Crss
0
0
0
2
4
6
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
8
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
160
100.0
30
10.0
TJ(Max)=150°C
TC=25°C
10µs
RDS(ON)
limited
100us
1ms
1.0
DC
Power (W)
ID (Amps)
10
200
1000.0
120
TJ(Max)=150°C
TC=25°C
0.1
80
40
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
10
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
5
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=4°C/W
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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AON6204
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100.0
IAR (A) Peak Avalanche Current
35
Power Dissipation (W)
30
TA=25°C
TA=100°C
TA=125°C
TA=150°C
25
20
15
10
5
0
10.0
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)
25
50
75
125
150
10000
40
35
TA=25°C
1000
30
Power (W)
Current rating ID(A)
100
TCASE (°C)
Figure 13: Power De-rating (Note F)
25
20
15
17
5
2
10
100
10
10
5
0
1
0
25
50
75
100
125
150
0.00001
TCASE (°C)
Figure 14: Current De-rating (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.001
0.1
10
1000
0
18
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=67°C/W
0.1
PD
0.01
Ton
Single Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
5/6
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AON6204
30V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
6/6
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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